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Harris Semiconductor
IRF631 Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics IRF631 5,221 1 $0.89 $0.89 $0.79 $0.72 $0.72 More Info
Harris Semiconductor
IRF63193
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics IRF63193 450 1 - - - - - More Info
International Rectifier
IRF631
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics IRF631 50 1 $5.6 $3.64 $2.6135 $2.6135 $2.6135 More Info

IRF631 datasheet (25)

Part Manufacturer Description Type PDF
IRF631 Fairchild Semiconductor N-Channel Power MOSFETs, 12A, 150-200 V Scan PDF
IRF631 FCI POWER MOSFETs Scan PDF
IRF631 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF631 General Electric Power Transistor Data Book 1985 Scan PDF
IRF631 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. Scan PDF
IRF631 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF631 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF631 Motorola Switchmode Datasheet Scan PDF
IRF631 Motorola European Master Selection Guide 1986 Scan PDF
IRF631 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
IRF631 Others Shortform Transistor PDF Datasheet Scan PDF
IRF631 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF631 Others Shortform Transistor PDF Datasheet Scan PDF
IRF631 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF631 Others Shortform Datasheet & Cross References Data Scan PDF
IRF631 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF631 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF631 Others FET Data Book Scan PDF
IRF631 National Semiconductor N-thannel Power MOSFETs Scan PDF
IRF631 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

IRF631 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
irf630

Abstract: IPF630 IRF632 1RF631 IRF631 IRF633 MOSFET 20V 100A IFIF633 IFIF631 motor characteristics curve
Text: Standard Power MOSFETs IRF630, IRF631 , IRF632, IRF633 Power MOS Field-Effect Transistors File , carrier device TERMINAL DIAGRAM The IRF630, IRF631 , IRF632 and IRF633 are n-channel enhancement-mode , JEDEC TO-22ÛAB Absolute Maximum Ratings Parameter IRF630 IRF631 IRF632 IRF633 Units Vqs Drain â , . (1.6mm) from case for 10s) °c ,3-164 -Standard Power MOSFETs IRF630, IRF631 , IRF632, IRF633 , IRF631 IRF633 150 - - V vGS(thl Gate Threshold Voltage ALL 2.0 - 4.0 V VDS = vGS'0 = *GSS


OCR Scan
PDF IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 irf630 IPF630 1RF631 IRF631 MOSFET 20V 100A IFIF633 IFIF631 motor characteristics curve
IRF630

Abstract: IRFP230 for IRF630 IRFP231 IRF630 mosfet F632 ade 633 IRF632 IRF633 IRFP233
Text: tu re relia b ility PRODUCT SUMMARY Part Number IRF630/IRFP230 IRF631 /IRFP231 IRF632/IRFP232 , Characteristic Drain-Source Breakdown Voltage IRF630/IRFP230 IRF632/IRFP232 IRF631 /IRFP231 IRF633/IRFP233 VGSIRF633/IRFP233 Static Drain-Source On-State Resistance (2) IRF630/IRFP230 IRF631 /IRFP231 IRF632/IRFP232 , CHARACTERISTICS Symbol Characteristic Continuous Source Current (Body Diode) IRF630/IRFP230 IRF631 /IRFP231 IR F632/IRFP232 IR F633/IRFP233 Pulse Source Current(Body Diode)(3) IRF630/IRFP230 IRF631 /IRFP231 IR F632


OCR Scan
PDF IRF630/631Z632/633 FP230/231/232/233 O-220 IRF630/IRFP230 IRF631 /IRFP231 IRF632/IRFP232 IRF633/IRFP233 IRF630/631/632/633 IRFP230/231/232/233 IRF630 IRFP230 for IRF630 IRFP231 IRF630 mosfet F632 ade 633 IRF632 IRF633 IRFP233
rf630

Abstract: IRF630 IRF632 OT391 IRF631 IRF633 j01 relay
Text: , IRF631 , IRF632, IRF633 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A , The IRF630, IRF631 , IRF632 and IRF633 are n-channel enhancement-mode silicon-gate power field-effect , «2CS-3992« JEDEC TQ-220AB Absolute Maximum Ratings Parameter IRF630 IRF631 IRF632 IRF633 Units , 0 IE 18355 D_T~3?~//_ IRF630, IRF631 , IRF632, IRF633 Electrical Characteristics @Tc = 258C (Unless , Voltage IRF630 IRF632 200 - - V VGS = OV lD » 250pA IRF631 IRF633 150 - - V vGS(ihl Gate Threshold


OCR Scan
PDF 3fl75Dfll IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 rf630 IRF630 OT391 IRF631 j01 relay
f630

Abstract: IRF630 HEXFET TRANSISTORS F633 IRF632 IRFG31 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Text: " T j = 150°C M AX . y I R lhJC = ' -6i K /W l SINGLE PULSE IRF631.3 0 1 2 3 4 Vos , Temperature Stability Product Summary Part Number IR F 6 30 IRF631 IR F 6 32 IR F633 V DS 200V 150 V 200V , , IRF631 , IRF632, IRF633 Devices Absolute Maximum Ratings Parameter Vds V d GR Id @ T c = 2 S ° C Id @ T , Junction and Storage Temperature Range Lead Temperature 75 0 .6 IRF630 200 200 9 .0 6 .0 36 IRF631 150 1 50 , Breakdown Voltage Type IR F630 IRF632 IRF631 IRF633 V c s ith ) IGSS 'g s s 'd s s Threshold Voltage G


OCR Scan
PDF IRF63Q IRFG31 IRFB32 IRF633 TQ-220AB C-245 IRF630, IRF631, IRF632, IRF633 f630 IRF630 HEXFET TRANSISTORS F633 IRF632 alps 103 DIODE C244 mosfet f630
SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Text: N-channel enhancement mode vertical DMOS FET IRF630 IRF631 IRF632 IRF633 FEATURES · · · · · · · Compact , , reliability and ruggedness. PRODUCT SUMMARY Part No. IRF630 IRF631 IRF632 IRF633 BVcss 200V 1B0V 200V 150 V , 0005575 S ZETB 95D 0 5 5 7 5 D IRF630 IRF631 IRF632 IRF633 ABSOLUTE MAXIMUM RATINGS Parameter VD S ·o ·d m IRF630 200 9 36 ±20 75 IRF631 150 9 36 ±20 75 IRF632 200 8 32 ±20 75 IRF633 , IRF631 IRF633 V G S ( th ) Ig s s Max. 4 500 250 1000 Unit V Conditions 200 150 2 - VG S


OCR Scan
PDF TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630
IRF632

Abstract: irf631 irf630
Text: MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are d esigned fo r lo w , } IRF630, IRF632 IRF631 Symbol Min I Max ] Unit V (BR)DSS 200 150 lDSS T J = 125;C) 'G , o lta g e v G S (th) 2 4 Vdc IV q s = V g s ' Iq = 0 ,2 5rr,A ) r D S (o n) IRF630, IRF631 IRF632 'D io n ) IRF630, IRF631 IRF632 9FS IRF630, IRF631 IRF632 3 3 - - - S ta tic D ra in -S o u


OCR Scan
PDF IRF630 IRF631 IRF632 IRF630. IRF632
IRFB30

Abstract: IRF632 17nF IRF 120A
Text: MICRO ELECTRONICS CORP 11E D bG^17ñfl 0000704 7 ^PRELIMINARY IRF630 IRF631 IRF632 IRF633 HIGH POWER MÖSFETs (APPLICATIO N S SWITCHING REGULATORS' · P « i Nuoto* IRFB30 MF631 IRF432 *03 200V 150V 200V 160V ROS(en) 040 to S.OA B.OA 8.0A 8.0A t * MOTOR DRIVERS · CONVERTERS , Voltage Type IRF630 IRF632 IRF631 IRF633 ALL ALL ALL ALL Min 200 150 2.0 Static Drain-Source On-State Resistance ( 2 ) IRF630 IRF631 IRF632 IRF633 IRF630 IRF631 IRF632 IRF633 gfs c iss ^oss c rss *d(on) V *d(OI


OCR Scan
PDF IRF630 IRF631 IRF632 IRF633 IRFB30 MF631 IRF432 17nF IRF 120A
irf 4110

Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 SS-AT9 irf 1962 IRF631 IRF630
Text: IRF630 IRF631 IRF632 TM O S POWER FETs 8 and 9 AMPERES 'D S (on ) = 0.4 O HM 150 and 200 VOLTS D S (o n , Min Max U nit V(BR)DSS IRF630, IRF632 IRF631 'DSS 'g ssf 'g s s r -200 150 - Vdc mAdc 0.2 1 100 100 nAdc nAdc VGS(th) rDSfon( IRF630, IRF631 IRF632 'D(on) IRF630, IRF631 IRF632


OCR Scan
PDF IRF630 IRF631 IRF632 IRF630, IRF632 irf 4110 for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 SS-AT9 irf 1962
irf 630

Abstract: ALL IRF 3.335t IRF642 IRF641 vn89af IRF633 IRF632 IRF631 IRF620
Text: 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 , 1.2 6.25 VN35AB 1-12 Siliconix IRF230 ■IRF231 " IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 â , 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2 8A IRF633 150 V GO-J^ S ABSOLUTE MAXIMUM


OCR Scan
PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf 630 ALL IRF 3.335t IRF642 IRF641 vn89af IRF633 IRF632 IRF631 IRF620
irf630

Abstract: No abstract text available
Text: Number V ds RDS|on) Id IRF630 200V 0 .4 0 9.0A IRF631 150V 0.40 9.0A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF630 IRF631 Unit Drain-Source Voltage (1 , =25°C unless otherwise specified) Min Typ Max Units IRF630 200 - - V IRF631


OCR Scan
PDF IRF630/631 IRF630 IRF631 irf630
MOSFET IRF 630

Abstract: IRF630 f630 IRF630R 633R
Text: oldering.Ti_ (0.063" (1,6mm) from case for 10s) NOTES: IRF631 IRF631R 150 150 9.0 6.0 36 ± 20 75 0.6 36 , , IRF630R/632R IRF631 /633, IRF631R /633R Gate Threshold Voltage Gate-Source Leakage Forward Gate-Source , , IpEAK " 9A (See Figure 15) 4-317 IRF630, IRF631 , ÌR F632, /R F 633 IRF630R, IRF631R , IRF632R , Input Im pedance DRAIN (FLANGE) u o SOURCE ' DRAIN GATE Description The IRF630, IRF631 , , IRF631R , IRF632R and IRF633R types are advanced power MOSFETs designed, tested, and guaranteed to


OCR Scan
PDF IRF630R/631R/632R/633R IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R MOSFET IRF 630 IRF630 f630 IRF630R 633R
SEC irf630

Abstract: No abstract text available
Text: 25° C Operating and Storage Junction Temperature Range VDSS IRF630/D84DN2 200 IRF631 , = 0V, ID = 250 //A) IRF631 /D84DM2 Zero Gate Voltage Drain Current (VDS = Max Rating, VQS = 0V, Tc , 2KVA, VD"S = VQS X SI NGLE PULSE V2S-C IRF630/D84DN2 : IRF631 /D84DM2-^| 10 20 40


Original
PDF IRF630 D84DN2 O-220AB 100ms IRF630/D84DN2 IRF631/D84DM2-^ SEC irf630
1RF630

Abstract: No abstract text available
Text: CHARACTERISTIC Drain-Source Breakdown Voltage IRF630/632, IRF630R/632R IRF631 /633, IRF631R /633R Gate , €¢ Linear Transfer Characteristics • High Input Impedance D escription The IRF630, IRF631 , IRF632 , , IRF631R , IRF632R and IRF633R types are advanced power MOSFETs designed, tested, and guaranteed to , (0.063” {1,6mm) from case for 10s) IRF631 JRF631R IRF632 IRF632R IRF633 IRF633R UNITS


OCR Scan
PDF RF630/631/632/633 F630R /631R /632R /633R IRF630, IRF631, IRF632, IRF633 IRF630R, 1RF630
IRFP231

Abstract: No abstract text available
Text: 230/23 1Z 2 32/233 MAXIMUM RATINGS Characteristics Symbol IRF630 IRFP230 IRF631 IRFP231 , 2 3 0 IRF631 /IR FP2 31 8.0 - - A - 0.2 5 0.4 n - 0.4 0.6 V o s , Resistance (2) RoS(on) IR F 6 3 0 / IR F P 2 3 0 IRF631 /IR FP231 IR F 6 3 2 / IR F P 2 3 2 IR F 6 3 3 , IRF631 /IR FP231 IR F 6 3 2 / IR F P 2 3 2 IR F 6 3 3 / IR F P 2 3 3 Is m V sd trr Test


OCR Scan
PDF G0121Ã IRF630/631/632/633 IRFP230/231Z232/233 O-220 /IRFP231 IRFP230/231/232/233 ib414E IRFP231
SEC irf630

Abstract: D84 TRANSISTOR irf630 D84DN2 Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
Text: /D84DN2 IRF631 /D84DM2 UNITS Drain-Source Voltage Vdss 200 150 Volts Drain-Gate Voltage, Rqs = 1Mil VdGR , characteristics Drairi-Source Breakdown Voltage IRF630/D84DN2 (VGS = 0V, lD = 250 //A) IRF631 /D84DM2 BVDSS


OCR Scan
PDF IRF630 D84DN2 12-5n 00A//usec, SEC irf630 D84 TRANSISTOR Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 IRF720 IRF721 IRF722 IRF723 IRF730 IRF731 IRF732 IRF733 IRF740 IRF741 , IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 , IRF631 IRF632 IRF633 IRFP340 IRFP440 SIEMENS BUZ347 BUZ348 BUZ349 BUZ350 BUZ351 BUZ353 BUZ350 BUZ351


OCR Scan
PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
Text: - THOMSON/ DISTRIBUTOR SflE D ■=¡021,073 000570b ¿IE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel (Continued) Maximum Ratings Package bvdss ■ds rDS(ON) (v) (a) ohms TO-204 TO-205 TO-220 TO-247 4-Pin DIP 150 4 1.20 irf223 irf623 4.50 0.60 irff233 5 0.80 irf221 irf621 5.5 0.40 irff231 8 0.60 irf233 irf633 9 0.40 irf231 irf631 16 0.22 irf243 irf643 18 0.18 irf241 irf641 25 0.12 irf253 irfp253 30 0.085 irf251 irfp251 200 0.25 7.50 IRFD2Z2


OCR Scan
PDF 000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
irf 630

Abstract: AAIJ VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF 635 IRF422
Text: IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel Enhancement Mode MOSPOWER 200V! s Siliconix , 8A IRF233 150V IRF630 200V 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2 8A IRF633


OCR Scan
PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 irf 630 AAIJ VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF 635 IRF422
IRF615

Abstract: No abstract text available
Text: POWER MOSFETs TO-220 NCHANNEL BVdss(V) 150.00 (Continued) RDS(onXQ) 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 3.00 2.00 1.50 1.10 0.68 0.45 0.34 0.28 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 Part Number IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRL641 IRF643 IRF641 IRL610 IRF612 IRF610 IRL620 IRF622 IRF620 IRL630 IRF632 IRF630 IRL640 IRF642 IRF640 IRF615 IRF614


OCR Scan
PDF O-220 IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRF615
irf630 equivalent

Abstract: irf630 irf640 IVN6200CNH IVN6200CNF IVN6200CNE IVN6200CND IVN6100TNU IRF533 Irf 630 mtm5n35
Text: 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 , IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel Enhancement Mode MOSPOWER 200V! s , -3 IRF232 200V 0.6Q 8A IRF233 150V IRF630 200V 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2


OCR Scan
PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf630 equivalent irf630 irf640 IVN6200CNH Irf 630 mtm5n35
Equivalent IRF 44

Abstract: irf630 VN0108N2 vn0106n5 VN46 IRF632 IRF540 IRF522 IRF422 IRF240
Text: 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 , Siliconix IRF230 ■IRF231 " IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel , 200V 0.4Q 9A IRF231 150 V TO-3 IRF232 200V 0.6Q 8A IRF233 150V IRF630 200V 0.4C2 9A IRF631


OCR Scan
PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 irf630 VN0108N2 vn0106n5 VN46 IRF422 IRF240
irf630 equivalent

Abstract: MTM5N40 IVN6100TNU VN2410L "cross reference" VN0401D IVN6200CNM irf 150 equivalent IVN6200CNF IVN6200CNE IRF533
Text: IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel Enhancement Mode MOSPOWER 200V! s , -3 IRF232 200V 0.6Q 8A IRF233 150V IRF630 200V 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2


OCR Scan
PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf630 equivalent MTM5N40 VN2410L "cross reference" IVN6200CNM irf 150 equivalent
1rf630

Abstract: rf630 IRF632R IRF630 HARRIS
Text: ® Figure 15. T e rm in a l D iag ram N -C H A N N E L ENHANCEM ENT MODE D IRF631 IRF631R 150 150 9.0 , Breakdown Voltage 1RF630/632, IRF630R/632R IRF631 /633, IRF631R /633R Gate Threshold Voltage Gate-Source , The IRF630, IRF631 , IRF632, and IRF633 are n-channel enhancement-mode sllicon-gate power field-effect transis tors. IRF630R, IRF631R , IRF632R and IRF633R types are advanced power MOSFETs designed, tested, and , MOSFETs /RF630 , ÍR F 6 3 1, /RF632, IR F633 IRF630R, IRF631R , IRF632R, IRF633R t r 10V 1v -


OCR Scan
PDF IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R 1rf630 rf630 IRF630 HARRIS
irf630

Abstract: IRF230 12N20 f630 IRF630-633 IRF630 Fairchild IRF633 MTP12N18 MTP12N20 IRF230-233
Text: Requirements • Ease of Paralleling FAIRCHILD A Schlumberger Company TQ-204AA TO-220AB IRF630 IRF631 , -220AB IRF631 150 V 0.40 n 9.0 A 6.0 A IRF632 200 V 0.50 n 8.0 A 5.0 A IRF633 150 V 0.50 ft 8.0 A 5.0 A


OCR Scan
PDF IRF230-233/IRF630-633 MTP12N18/12N20 TQ-204AA O-220AB IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 irf630 IRF230 12N20 f630 IRF630-633 IRF630 Fairchild IRF633 MTP12N18 MTP12N20 IRF230-233
SSP60N06

Abstract: irf630 irf640 SSP50N06 ssp15n06
Text: MOSFETs TO-220 N-CHANNEL Part Number IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 IRF521 IRF531 IRF541 IRF510 IRF520 IRF530 IRF540 IRF611 IRF621 IRF631 IRF641 IRF610 IRF620 IRF630 IRF640 IRF614 1RF624 IRF634 IRF644 IRF711 IRF721 ÍRF731 IRF741 IRF710 IRF720 IRF730 IRF740 IRF821 IRF831 IRF841 IRF820 IRF830 IRF840 500 450 350 250 200 150 100 80 60 FUNCTION GUIDE BVdss^V) 50 lD(on)(A) 10.00 15.00 16.00 30.00 50.00 50.00


OCR Scan
PDF O-220 IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP60N06 irf630 irf640 SSP50N06 ssp15n06
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