IRF542 Search Results

IRF540R

Abstract: RF540 trf540 IRF542R IIRF543R IRF541R IRF543R 250TI
Contextual Info: Rugged Power M O IRF540R, IRF541R IRF542R, IRF543R File Num ber 2009 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 100V-60V rDs on = 0.0850 and 0.11fi TERMINAL DIAGRAM D Features:

transistor tl 187

Abstract: IRF542 IRF543 2415a
Contextual Info: [FÂiiMÆSSF IRF542,543 24 AMPERES 100, 60 VOLTS INDS ON = 0.11 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF540

Abstract: T1 IRF540 IRF542 IRF541 IRF543 RF1S540 RF1S540SM IRF540 harris Applications Note of IRF540 IRF540 MOSFET
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V 0.077Ω and 0.100Ω N-Channel Power MOSFETs March 1996 Features Packages JEDEC TO-220AB • 25A and 28A, 80V and 100V SOURCE DRAIN GATE • rDS ON = 0.077Ω and 0.100Ω

irf540 switch

Abstract: transistor irf 540 IRF 540 irf transistors Application Note of IRF540 irf540 circuit diagram a irf 540 transistor IRF540 IRF540FI 541 transistor
Contextual Info: r Z 7 SCS-THOM SON ^7# M »H LIËT[iMO(g§ IRF 540/FI-541/FI IRF 542/FI-543/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS • • • • TYPE V DSS R DS(on IRF540 IRF540FI 100 V 100 V 0.077 fi 0.077 fi IRF541 IRF541FI 80 V 80 V 0.077 0.077 IRF542

RF540

Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Contextual Info: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q

IRF540

Abstract: irf540 27 MHz IRF540 n-channel MOSFET IRF541 IRF542 mosfet js8 irf540 "27 MHz" MOSFET IRF540 IRF543 power MOSFET IRF540
Contextual Info: - Standard Power MOSFETs File N um ber IRF540, IRF541, IRF542, IRF543 2309 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

IRF541

Abstract: mtp25n10 IRF540 motorola IRF540 motorola irf542 IRF541 motorola
Contextual Info: MOTOROLA SC XSTRS/R F 1 4 E D II MOTOROLA fc,3b?2Si» OQfiTtaô? Ô I m S E M IC O N D U C T O R TECHNICAL DATA IRF540 IRF541 IRF542 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate T M O S These T M O S Power FETs are designed for low

IRF540

Abstract: irf540 27 MHz SEC IRF540 75 LS 541 irf540 "27 MHz" IRF542 irf540 be IRF540 Rg IRF540 SEC NS2N
Contextual Info: IRF540/541/542/543 O ' S ilico n ix JLÆ in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V ) rDS(ON) ( f i) (A) IRF540 100 0.085 27 IRF541 60 0.085 27 IRF542 100 0.11 24 IRF543 60 0.11 24

IRF540 mosfet with maximum VDS 12v

Abstract: IRF540 Applications Note of IRF540 MOSFET IRF540 TA17421 IRF540 mosfet irf540 pdf switch irf541 IRF542 IRF543
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Semiconductor 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF5405

Abstract: IRF541 IRF540 mtp25n10 IRF542 IRF 540
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF540 IRF541 IRF542 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS These TMOS Power FETs are designed fo r low voltage, high speed power switching applications such as switching regulators, converters, solenoid

Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM H A F R F R IS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF542 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

1RF540

Abstract: RF540 mosFET 1RF540 IRF540 application note Application Note of IRF540 IRF540 International Rectifier irf540 mosfet control motor irf541 IRF540 application irf540 spice
Contextual Info: HE D I 4Ö55452 0000450 b | Data Sheet No. PD-9.373G INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRFS4Q IRFS41 IRF542 IRFS43 HEXFEF TRANSISTORS N-CHANNEL

IRF541

Abstract: IRF540 mosfet with maximum VDS 12v IRF5402 IRF540 T1 IRF540 IRF542 IRF543 IRF540 mosfet with maximum VDS 30 V RF1S540 RF1S540SM
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

IRF540

Abstract: Applications Note of IRF540 irf541 RF1S540SM9A RF1S540SM IRF542 IRF543 irf540 be IRF540 Rg RF1S540
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM HARRIS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

Contextual Info: IRF542 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)25# I(DM) Max. (A) Pulsed I(D)17 @Temp (øC)100 IDM Max (@25øC Amb)100# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55õ

IRFP240

Abstract: IRFP141 IRF140 IRF141 IRFP140 MTP4N45 MTP4N50
Contextual Info: N-Channel Power MOSFETs continued 2 30 1200 300 80 C4 1.0 1.5 2 30 1200 300 80 C4 4 0.25 0.085 15 60 1600 800 300 E1 2 4 0.25 0.085 15 60 1600 800 300 E1 17 2 4 0.25 0.085 15 60 1600 800 300 E1 29 19 2 4 0.25 0.085 15 60 1600 800 300 E^l 100 24 15 2 4 0.25

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

VN88AF

Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

MTP8N10

Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170