IRF521 Search Results

IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Contextual Info: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: IRF5210 TO-220AB l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D VDSS = -100V The TO-220 package is universally preferred for all

IRF5210

Abstract: SHD230452
Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE

IRF5210

Contextual Info: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )

IRF5210

Abstract: IRF5210S 1405B
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated

irf5210s

Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L

IRF5210

Abstract: SHD225452
Contextual Info: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S

IRF5210

Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A

IRF5210L

Abstract: IRF5210S
Contextual Info: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-148-79 IRF5210S HEXFET D2Pak PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S

Contextual Info: IRF521 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)9.2# I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)37# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ

1Actc

Contextual Info: PD 9.1434 International Iö R Rectifier IRF5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistancw Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channet Fully Avalanche Rated V d s s = -1 0 0 V RüS on = 0.06Q

IRF5210L

Abstract: IRF5210S
Contextual Info: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω

jrf 520

Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522
Contextual Info: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

IRF5210L

Abstract: IRF5210S
Contextual Info: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

mtp25n06

Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10

IRF521

Abstract: IRF520 irf523 F521 irf522
Contextual Info: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF5210

Abstract: shd230452
Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE

TO 521 MH

Abstract: transistor IRF520 TT220 schematic diagram UPS 600 Power structure irf 44 n 56-A IRF520 application note IRF 520
Contextual Info: / = T IRF 520/FI-521/FI IRF 522/FI-523/FI S G S -T H O M S O N H 0»H[L[i gï^(Q RS0 i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^ D S(on) IRF520 IRF520FI 100 V 100 V 0.27 ß 0.27 0 9.2 A 7 A IRF521 IRF521FI 80 V 80 V 0.27 0 0.27 n 9.2 A

IRF5210S

Abstract: IRF5210L
Contextual Info: PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.06Ω

IRF5210PBF

Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A

IRF5210PBF

Contextual Info: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A

irf5210s

Contextual Info: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L