TT220 Search Results

TT2202

Abstract: IT02889 tt22
Contextual Info: TT2202 注文コード No. N 8 0 3 6 三洋半導体データシート N TT2202 NPN 三重拡散プレーナ形シリコントランジスタ カラーテレビ水平偏向出力用 特長 ・高速度である。 ・高耐圧である （VCBO=1500V） 。

TT2202

Abstract: TT220 ENN8036 IT02889
Contextual Info: TT2202 Ordering number : ENN8036 TT2202 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

STLT29

Abstract: STLT29FI STLT30 STLT30FI
Contextual Info: 7 ^ 5^537 0 0 2 1 2 0 e] fl STLT30/FI STLT29/FI SGS-THOMSON iy 5 7 , N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS S 6 S-TH0MS0N T YPE V DSS ^D Sfon Id STLT30 STLT30/FI 60 V 60 V cs 00 o o a 00 o o 25 A 15 A STLT29 STLT29/FI 50 V 50 V 0.08 n

Contextual Info: SGS-THOMSON [MOigœilLiera *® STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S TP2N A 50 STP2NA 50FI R d S oii 500 V 500 V < 4 a. < 4 0. Id 2 .8 A 2 A Cl • TYPICAL RüS(on) =3.25 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION

Contextual Info: S G S -T H O M S O N l f o M D S B m iC T IF M O lg S o a b / c S E R IE S VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA . . . . . . . . . • V E R Y LO W D R O PO U T VO LTA G E 0.45V V E R Y LO W Q U IE S C E N T C U R R EN T (TYP. 50 \xA IN O F F M O D E, 500|aA IN ON

Contextual Info: STPR151OD/F STPR1520D/F SGS-THOMSON £ RjflQ»[E[UiM R!lD gi ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY

Contextual Info: FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.7V @ IC = 5A Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.

tp3055

Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
Contextual Info: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

IRFZ42fi

Abstract: airbag
Contextual Info: Z ìi S G S -T H O M S ODeiN IRFZ42 IRFZ42FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 2 4 2 IR F Z 4 2 F I V dss RDS on Id 50 V 50 V 0 .0 3 5 Q 0 .0 3 5 Q 43 A 24 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

GC20930

Abstract: 6v dc motor IG 2200 19
Contextual Info: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

irf540

Abstract: IRF540FI irf540 circuit diagram IRF540 Rg
Contextual Info: SGS-THOMSON ¿7 # KLU 1T^ o [MD(gS IRF540 IRF540FI N -C H A N NELEN HAN C E M E NT MODE POWER MOS TRANSISTORS TYPE IR F 5 4 0 IR F 5 4 0 F I V dss RDS(on) Id 100 V 100 V 0 .0 7 7 n 0 .0 7 7 £2 28 A 16 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED

IRFP 620

Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
Contextual Info: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V

Contextual Info: SGS-THOMSON STP3N90 STP3N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N90 STP3N90FI Vdss FtDS on Id 900 V 900 V 4.5 £2 4.5 a 3.2 A 1.9 A . . . . . • AVALANCHE RUG G EDNESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

TT220

Abstract: transistor t220 BUZ71 dc to ac TT 220
Contextual Info: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,

IRF 260 N

Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
Contextual Info: 640 /FI 641/FI SGS-THOMSON ELiOT@KS IRF IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R D S on Id IRF640 IRF640FI 200 V 200 V 0.18 n 0.18 n 18 A 10 A IRF641 IRF641FI 150 V 150 V 0.18 a 0.18 n 18 A 10 A . • . ■ V dss AVALANCHE RUGGEDNESS TECHNOLOGY

STP60N06FI

Abstract: STP60N06
Contextual Info: 7^237 G D M b S M b 212 « S G T H SGS-TffOMSON STP60N06 STP60N06FI N - CHANNEL EN H A N C EM EN T MODE PO W ER MOS TRA N SISTO R TYPE STP60N06 STP60N06FI . . . • . V dss R D S o n Id 60 V 60 V < 0.02 Q < 0.02 a 60 A 32 A TYPICAL RDs(on) = 0.017 a AVALANCHE RUGGED TECHNO LO GY

TDA1519Q

Abstract: TDA1519BQ TDA1519 equivalent TDA1519AQ TDA1516 equivalent TDA1516AQ TDA1517 equivalent TDA1517B A1516 TDA1517BQ
Contextual Info: Laboratory Report Philips Semiconductors Audio/Radio Products Audio power ICs for car-radio NBA9001 Authors: J.J. Sips, C. v.d. Wolf, C. Joosse 1. INTRODUCTION A new range of audio power ICs for car-radio has been released which offers customers a lot of advantages.

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

3Na60

Contextual Info: *57 SGS-THOMSON 3NA60 S T P 3 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3N A60FI V dss R DS(on) Id 600 V 600 V < 4 a <4 a 2.9 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING

w94C

Abstract: 93CFI
Contextual Info: bdw93 c f i BDW94CFI SGS-THOMSON iLESMKS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPE MONOLITHIC DARLINGTON CONFIGURATION . COMPLEMENTARY PNP - NPN DEVICES 1 INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A PP LICA TIO N S

7NA60

Contextual Info: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 STP7NA60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING

VB408

Contextual Info: VB408 / VB408B VB408-1 / VB408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. TA R G ET DATA TYPE ^ V IN ,O U T h im VoUT 400 V 40 mA 1.25 to V |N-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25

tt2201

Contextual Info: *57 SGS-THOMSON stpsnaso iL iO M iQ £ I S T P 8 N A5 0 F I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8N A50FI V dss R DS(on) Id 500 V 500 V < 0.85 a < 0.85 a 8 A 4.5 A . T Y P IC A L R Ds (on) = 0.7 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING