1RFZ44
Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
Contextual Info: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS
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ta-25irfz35o-220ab1rfz40+14irfz423to-220irl510o-220irl5111rfz441rl5201rfz22irfz30irfz41irf1451rl540irfz451xys
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1XYS
Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR
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ta-25irfz35o-220ab1rfz40+12irfz42t0-247ixth6n80ao-247ixth10n1001xysirfz411xth5n1001rlz34irfz44irh254irl510
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IRFZ42fi
Abstract: airbag
Contextual Info: Z ìi S G S -T H O M S ODeiN IRFZ42 IRFZ42FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 2 4 2 IR F Z 4 2 F I V dss RDS on Id 50 V 50 V 0 .0 3 5 Q 0 .0 3 5 Q 43 A 24 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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irfz42irfz42fio-220isowatt220+3irfz42/figc37000airbag
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1rfz42
Contextual Info: 3 DE D / 3 T S G • S - 7 ^ 5 3 7 T t i O M S ODB^flM1^ 5 O IRFZ40 1RFZ42 N 7 Ib a 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDss ^DS on IRFZ40 50 V 0.028 ß 35 A IRFZ42 50 V 0.035 fi 35 A . VERY LOW RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE
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irfz401rfz42irfz42t-39-13 |
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IRFZ25
Abstract: IRF512 IRF51 IRFZ42 IRFZ30
Contextual Info: n c A r c International üç»!Rectifier I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current
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o-220irfz12irfz10irfz22+9irfz20irfz32irfz30irfz42irfz40irfz15irfz25irf512irf51
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IRFZ40
Abstract: irfz42 IRFZ42N
Contextual Info: SCS-THOMSON IRFZ40 IRFZ42 [ * Q m i ( M ( 0M (g s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on 'd IRF240 50 V 0.028 ß 35 A IRF242 50 V 0.035 Q 35 A . VER YLO W RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO
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irfz40irfz42irf240irf242+1irfz42n
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8 pin ic 9435A
Abstract: 9435a 9435A transistor c442 diode c446 transistor irfz40 RFZ4 diode c446 9435a mosfet IRFZ42N
Contextual Info: HE D I ^<355452 OQQôtilE 3 | Data Sheet No. PD-9.435A INTERNATIONAL R E C T IF IE R T-39-13 I N T E R N A T I O N A L R E C T I F I E R Ii o r I HEXFET TRANSISTORS IRFZ40 IRFZ42 N -C h a n n e l 5 0 VOLT POWER MOSFETs Product Summary 50 Volt, 0.028 Ohm HEXFET
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t-39-13irfz40irfz42t0-220ab+10c-4468 pin ic 9435a9435a9435a transistorc442 diodec446 transistorrfz4diode c4469435a mosfetirfz42n
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z40 mosfet
Abstract: IRFZ42 IRFZ40 221A-04
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IRFZ40 IRFZ42 P o w e r F ie ld E f f e c t T ra n s is to rs N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S T h e « TMOS Power fETa ore designed for lo w voltage. hlQfi «peed power v»MK:hlr>3 Bppilcntlon* such as switching
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irfz40irfz4221a-04o-22cab+2z40 mosfet221a-04
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50N05E
Abstract: TP50N05E POWER MOSFET irfz40
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IRFZ40 IRFZ42 P o w e r Field E ffe c t T ra n s is to rs N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM OS Pow er FETs are designed fo r lo w voltage, h ig h speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g
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irfz40irfz4250n05etp50n05e+1power mosfet
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IRFZ42
Contextual Info: / 3 T IR F Z 4 0 [j^ D Ë ^ tlIL tiC T M D g i_ IR F Z 4 2 S G S -T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRFZ40 50 V 0.028 IRFZ42 50 V 0.035 fi fi Id 35 A 35 A • VERY LOW RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE
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irfz40irfz42 |
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1rfz44
Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)
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irfz20o-220irfz22irfz30+13irfz325to-220irl5101rfz44mfe92001rfz30irfz121rfz22vn10lpirfu9212irfu9220irfu9222irfu9022
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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IRFZ44
Abstract: IRFZ45 IRFZ44 mosfet IRFZ42 IRFZ44 MOSFETs IRFz44 n-channel MOSFET IRFZ40
Contextual Info: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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irfz44/45irfz40/42irfz44irfz45+5irfz40irfz42irfz44 mosfetirfz44 mosfetsirfz44 n-channel mosfet
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ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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o-220isowatt220isowatt22qsth107n50+3sth10n50sthi10n50sthi10n50fi
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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p-220isowatt220o-220sthi07n50+11sthi07n50fisthi10n50sthi10n50fisgs*p381isowatt218 igbtstlt20mtp3055afisgsp381irfp453fisgsp579sgsp591
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TSD45N50V
Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00
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o-220tsd45n50vtsd200n05vtsd40n55v+7tsd180n10virf540tsd135n10vtsd150n10vtsd4m450vtsd17n100tsd160n05v
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1XYS
Abstract: 1RL630 1rlz44 IRLZ20 1RFZ40 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Id (tnA) Coss Crss ft & m % Vg s =0 (max) ♦ t y p Vg s (V) (0) max Ciss *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF)
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ta-25irfz35o-220ab1rfz40+12irfz42ssh6n70assh7n12ssh7n15ssh8n121xys1rl6301rlz44irlz20irfz44irh254irl510
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IRFZ30
Abstract: IRFZ45 IRFZ32 irfz IRFZ12 THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: THOriSÜN/ DISTRIBUTOR SflE D • ÌOat.073 OOOSaDl HEXFET Powermosfets L^ l m TCSK intemaraonal Rectifier Plastic Insertable Package T0-220 N-Channel Part Number V p s Drain Source Voltage Volts R0S(on) On-State Resistance (Ohms) Iq Continuous Drain Current
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t0-220irfz12o-220abirfz10+12irfz22irfz20irfz32irfz30irfz42irfz40irfz45irfzthomson distributor 58e dirfz25thomson 58ethomson 58e case outline
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mfe9200
Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
Contextual Info: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0
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1rfd9120irfd9123irf09210-4rff230+13o-205afirff231t0-205afirff232irff233mfe9200f111irfd9213irfd9220irff110irff113irff120irf09120
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1RFZ44
Abstract: IRFZ30 1RFZ22 1rfz20 IRF215 IRFZ12 IRF145 IR1531 IRFZ45 rfz34
Contextual Info: £ € I À t Vd s Vg s W. Ta=25°C Id Ig s s Pd Vg s th) Id s s or * /CH * /CH (A) (W) min max (V) (V) % & Vd s = Vg s D S (o n ) te (Ta=25‘C) I d ( o ii ) Ciss g fs Coss Crss Vg s =0 (max) ♦typ V g s C O ) (V) (*typ) (*typ) (*typ) (max) (max) (max)
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1rfu9220rfz10o-220irfz12+12irl510irl5111rl5201rfz44irfz301rfz221rfz20irf215irf145ir1531irfz45rfz34
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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