IRL530 Search Results

Contextual Info: PD - 95452 IRL530PbF • Lead-Free Document Number: 91299 6/23/04 www.vishay.com 1 IRL530PbF Document Number: 91299 www.vishay.com 2 IRL530PbF Document Number: 91299 www.vishay.com 3 IRL530PbF Document Number: 91299 www.vishay.com 4 IRL530PbF Document Number: 91299

IRL530

Abstract: SiHL530 SiHL530-E3
Contextual Info: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRL530A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .1 2 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 100V

L3103L

Abstract: l3103 3103L
Contextual Info: PD- 95593 IRL530NSPbF IRL530NLPbF • Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit

T1 IRL530N

Abstract: IRL530N NIRF1010
Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-91348B International I ö r Rectifier • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated IRL530N HEXFET Power MOSFET VDSS = 100V R ü S o n =

1RFZ44

Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
Contextual Info: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS

Contextual Info: IRL530 Advanced Power MOSFET FEATURES B ^ - 100 V ^ D S o n = 0 .1 2 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 100V

1XYS

Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR

Contextual Info: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive

JJ SMD diode

Abstract: AN-994 IRL530S SMD-220 smd diode marking mp smd diode JF
Contextual Info: PD-9.909 International Rectifier IRL530S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature

IRL530

Abstract: IRF MOSFET driver
Contextual Info: IRL530 A dvanced Power MOSFET FEATURES B V DSS — 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .1 2 Q 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V

Contextual Info: PD - 95451 IRL530NPbF • Lead-Free 1 IRL530NPbF 2 IRL530NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)

Contextual Info: IRL530A A d v a n c e d P ow er MOSEET FEATURES - 100 V ^ D S o n = 0 .1 2 Q B ^D S S • Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area

AN609

Abstract: IRL530 SiHL530
Contextual Info: IRL530_RC, SiHL530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRL530S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)88 Minimum Operating Temp (øC)-55õ

IRL530

Abstract: SiHL530 SiHL530-E3
Contextual Info: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated

IRL530

Contextual Info: 4ÛS54S2 001SÖS0 3Tb • INR International e Rectifier PD-9.562C IRL530 bSE J> INTERNATIONAL R E C T IF IE R HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature

irf 210 mosfet

Abstract: IRf 48 MOSFET IRL530N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1348A IRL530N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V

Contextual Info: IRL530A Advanced Power MOSFET FEATURES B ^ - 100 V ^ D S o n = 0 .1 2 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 100V

IRL530N

Abstract: NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A
Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95593 IRL530NSPbF IRL530NLPbF • Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit