IRLZ14 Search Results
IRLZ14 Datasheets (34)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRLZ14 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 60V, 10A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | International Rectifier | HEXFET Power MOSFET | Scan | 174.36KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | International Rectifier | HEXFET Power Mosfet | Scan | 174.36KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 80.14KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 103.09KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | Unknown | FET Data Book | Scan | 98.86KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.39KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14 | Samsung Electronics | N-Channel Logic Level MOSFET | Scan | 217.49KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14A | Samsung Electronics | Advanced Power MOSFET | Scan | 460.57KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14L | International Rectifier | HEXFET Power MOSFET | Original | 295.8KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14L | International Rectifier | HEXFET Power MOSFET | Original | 325.5KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14L | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-262 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14L | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 44.18KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14PBF | International Rectifier | HEXFET Power MOSFET | Original | 255.38KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14PBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14PBF-BE3 | Vishay Siliconix | MOSFET N-CH 60V 10A TO220AB | Original | 1.18MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14S | International Rectifier | HEXFET Power MOSFET | Original | 325.5KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14S | International Rectifier | HEXFET Power Mosfet | Original | 295.8KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLZ14 Price and Stock
Vishay Intertechnologies IRLZ14PBFTrans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRLZ14PBF | 23,046 | 73 |
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| IRLZ14PBF | 9,988 | 22 |
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| IRLZ14PBF | 2,985 | 17 |
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IRLZ14PBF | Bulk | 20 Weeks | 1,000 |
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IRLZ14PBF | 1,712 |
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IRLZ14PBF | 10,000 | 20 Weeks | 1 |
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| IRLZ14PBF | 2,985 | 20 Weeks | 1 |
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IRLZ14PBF | Bulk | 2,980 | 1 |
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| IRLZ14PBF | Bulk | 2,000 | 1 |
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IRLZ14PBF | Bulk | 1,000 |
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IRLZ14PBF | Tube | 3,200 | 100 |
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IRLZ14PBF | 23,046 | 1 |
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IRLZ14PBF | 10,550 |
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IRLZ14PBF | 25 Weeks | 50 |
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Vishay Intertechnologies IRLZ14STRRPBF- Tape and Reel (Alt: IRLZ14STRRPBF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRLZ14STRRPBF | Tape & Reel | 20 Weeks | 800 |
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IRLZ14STRRPBF |
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IRLZ14STRRPBF | Reel | 800 |
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IRLZ14STRRPBF | 800 |
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IRLZ14STRRPBF | 25 Weeks | 800 |
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IRLZ14STRRPBF | 254 |
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Vishay Intertechnologies IRLZ14STRLPBF- Tape and Reel (Alt: IRLZ14STRLPBF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRLZ14STRLPBF | Tape & Reel | 20 Weeks | 800 |
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IRLZ14STRLPBF |
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IRLZ14STRLPBF | Reel | 800 |
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IRLZ14STRLPBF | 1 |
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IRLZ14STRLPBF | 4,000 |
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IRLZ14STRLPBF | 25 Weeks | 800 |
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Vishay Intertechnologies IRLZ14PBF-BE3N-CHANNEL 60V - Tape and Reel (Alt: IRLZ14PBF-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRLZ14PBF-BE3 | Tape & Reel | 30 Weeks | 1,000 |
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IRLZ14PBF-BE3 |
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IRLZ14PBF-BE3 | Bulk | 1 |
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| IRLZ14PBF-BE3 | Bulk | 1 |
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IRLZ14PBF-BE3 | Tube | 1,000 |
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Vishay Intertechnologies IRLZ14SPBFMOSFETs TO263 N-CH 60V 10A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRLZ14SPBF | 2,846 |
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IRLZ14SPBF | Bulk | 1,000 |
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IRLZ14SPBF | Tube | 1,000 |
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IRLZ14SPBF | 1 |
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IRLZ14SPBF | 25 Weeks | 50 |
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IRLZ14 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
Original |
irlz14sihlz142002/95/eco-220ab+2 | |
1RFZ44
Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
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OCR Scan |
ta-25irfz35o-220ab1rfz40+14 | |
IRLZ14Contextual Info: International k Rectifier 4A55HS2 0 0 1 5 ^ 5*13 11 NR PD-9.556C IRLZ14 HEXFET® Power MOSFET b5E D INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching |
OCR Scan |
4a55hs2irlz14554s2 | |
marking F53
Abstract: AN-994 IRLZ14 IRLZ14L IRLZ14S
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Original |
irlz14s/lirlz14sirlz14l12-mar-07+3 | |
1XYS
Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
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OCR Scan |
ta-25irfz35o-220ab1rfz40+12 | |
IRLZ14
Abstract: 556C
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OCR Scan |
irlz14o-220556c | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
Original |
irlz14sihlz14o-220ab2002/95/ec+3 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
Original |
irlz14sirlz14lsihlz14ssihlz14l+2 | |
irlz14Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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irlz14sihlz142002/95/eco-220ab+2 | |
SiHLZ14S
Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
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irlz14sirlz14lsihlz14ssihlz14l+3 | |
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Contextual Info: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier |
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irlz14s/lirlz14sirlz14l08-mar-07 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
Original |
irlz14sirlz14lsihlz14ssihlz14l+2 | |
AN-994
Abstract: IRLZ14 IRLZ14L IRLZ14S
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Original |
irlz14s/lirlz14sirlz14lan-994+1 | |
IRLZ14Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
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irlz14sihlz14o-22018-jul-08 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
Original |
irlz14sirlz14lsihlz14ssihlz14l+2 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) |
Original |
irlz14sirlz14lsihlz14ssihlz14l+2 | |
IRlZ14
Abstract: IRLZ10
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OCR Scan |
irlz14/10irlz14irlz10ti-25 | |
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Contextual Info: IRLZ14_RC, SiHLZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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irlz14sihlz14an609configurati5-oct-10+4 | |
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Contextual Info: IRLZ14S_RC, IRLZ14L_RC, SiHLZ14S_RC, SiHLZ14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
irlz14sirlz14lsihlz14ssihlz14l+4 | |
AN-994
Abstract: IRLZ14 IRLZ14L IRLZ14S
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Original |
irlz14s/lirlz14sirlz14lan-994+1 | |
IRLZ14L
Abstract: IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14STR-E3
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Original |
irlz14sirlz14lsihlz14ssihlz14l+3 | |
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Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize |
Original |
irlz14sirlz14lsihlz14ssihlz14l+3 | |
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Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature |
Original |
irlz14sihlz14o-22012-mar-07 | |
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Contextual Info: PD - 95457 IRLZ14PbF • Lead-Free 1 IRLZ14PbF 2 IRLZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) |
Original |
irlz14pbfo-220ab | |