L3705N
Abstract: 1RLZ34N l3705nl 1RLZ24 91323 IRL3103L IRL2505 IRL2203N L-370
Contextual Info: HEXFE1 Power MOSFETs International IC2R Rectifier !d •d v {BR 0SS Continuous R0 Drain-to-Source *DS on) Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Part Resistance Voltage Resistance Dissipation 25°C Number
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irl3303lirl3103lirl2203nrl3803l+101rlz24nl1rlz34nlirl2505ll3705n1rlz34nl3705nl1rlz2491323irl2505l-370
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1rlz44
Abstract: 1RL530 1RLZ34 irfc9024 1RL520 IRFC9014 IRFC RF9620
Contextual Info: International IÖ R Rectifier HEX Size Part Number HEXFETRPower MOSFETs V ds «DSM Recommended Source Bonding Wire Die Outline Figure mi|s mm Equivalent Device Type HEXFET Die 3 IRFC 9 23 0 -200 0.8 D4I 8 0.2 3 T ÌRFC9130 -I00 0.3 D40 in 0.25 [RF9530 IRFC 9 2 2 0 *
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rfc9130rfc9014irfc9024irf9630+10rf9530rf9620irf9520irfr90141rlz441rl5301rlz341rl520irfc9014irfc
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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