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    IRFC Search Results

    IRFC Datasheets (92)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRFC014R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC024R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC034R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC044
    International Rectifier HEXFET Power Mosfet Original PDF 33.21KB 1
    IRFC044R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC054R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC110R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC120R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC130R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC1404
    International Rectifier HEXFET Power Mosfet Original PDF 24.54KB 1
    IRFC140R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC150
    IXYS HIGH VOLTAGE POWER MOSFET DIE Scan PDF 46.6KB 1
    IRFC150
    Sharp 100 V, high voltage power MOSFET die Scan PDF 46.6KB 1
    IRFC150R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC1Z0R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC210R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC214R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC220R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC224R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
    IRFC234R
    International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF 1.5MB 15
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    IRFC Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies IRFC37N50AB

    - Bulk (Alt: IRFC37N50AB)
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    Avnet Americas IRFC37N50AB Bulk 19 Weeks 220
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    Vishay Intertechnologies IRFC830B

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    Avnet Americas IRFC830B Bulk 19 Weeks 4,584
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    Vishay Intertechnologies IRFC9640B

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    Avnet Americas IRFC9640B Bulk 22 Weeks 2,959
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    Vishay Intertechnologies IRFCE20B

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    Avnet Americas IRFCE20B Bulk 61 Weeks 4,423
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    Vishay Intertechnologies IRFC350B

    - Bulk (Alt: IRFC350B)
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    Avnet Americas IRFC350B Bulk 56 Weeks 1
    • 1 $7.18
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    • 100 $7.04
    • 1000 $7.04
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    IRFC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


    Original
    irfc18n50kbo-220 PDF

    IRFC24N15DB

    Contextual Info: PD - 94750 IRFC24N15DB HEXFET Power MOSFET Die in Wafer Form N-CH l l G S Key Electrical Characteristics Packaged Part c Parameter Description 150V RDS(on) = 95mΩ (max.) 6" Wafer D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚


    Original
    irfc24n15db95film PDF

    shd22512

    Contextual Info: SENSITRON SEMICONDUCTOR SHD225505 TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number - SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS


    Original
    shd22512shd225505o-254irfc450 PDF

    AD580

    Abstract: AD580J AD580K AD580L AD580M S30V
    Contextual Info: • S .ii- i- fí’ J. x i'ifó rlV V iü ^ T irfc l. '■,! gg- SSI + 3l 0¿ + A tí d d A ií yui Aui •91 ? ? W M -lM -H W v ' l H W S fflïlïS H S l« 0>ci V 921 + 9 9 - 921 + 9 9 - 921 + 0¿ + 0¿ + ' 5 ■•i i i* Î ^ U f 3 5 » í i» S - Y # ‘' H ö l v +


    OCR Scan
    ad580mil-std-883bad580m350mw+710seccad580jc-70tnad580jad580kad580ls30v PDF

    IRFC450

    Abstract: SHD225505 SHD2251
    Contextual Info: SENSITRON SEMICONDUCTOR SHD225505 TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number - SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS


    Original
    shd225505shd22512o-254irfc450+3250ma10vdcshd2251 PDF

    Contextual Info: This information is given as an indication. In the continual goal to improve our products, we reserve the right to make any modifications judged necessary irfcSii llJCl RADI ALL Microwave components 22GHz SMA OPTIONS : INDICATOR TECHNICAL DATA SHEET LATCHING


    OCR Scan
    22ghzf63121 PDF

    ic 4043

    Abstract: IRFC450 SHD225505B
    Contextual Info: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original
    shd225505bo-254irfc450250ma+210vdcic 4043 PDF

    Contextual Info: PD - 94770 IRFC2204B HEXFET Power MOSFET Die in Wafer Form N-CH D l l 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 40V RDS on = 3.6mΩ (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c Min. Typ. Max. Test Conditions


    Original
    irfc2204b PDF

    IRFC2907

    Contextual Info: PD - 93777B IRFC2907 HEXFET Power MOSFET Die in Wafer Form D 75V RDS on =0.0033Ω 6" Wafer G S Electrical Characteristics (Wafer Form) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


    Original
    93777birfc2907200na PDF

    1RF520

    Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
    Contextual Info: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800


    OCR Scan
    irfc420irfcc20irfce20irfcf20+16irfcg201rfc034irfc120irfcg50irfcc40irfc4601rf5201rfp4601rfp150irf9540 equivalentirfp450 equivalent1rfbc20irf9640 equivalent1rfp0541rfpg50irfp260 equivalent PDF

    IRFZ44 equivalent

    Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
    Contextual Info: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214


    OCR Scan
    irfc014irfc110irfc210irfc214+15irfc310irfc024irfc120irfc220irfc224irfc320irfz44 equivalentirfbe30 equivalentirfbg30 equivalentirfpe40 equivalentirfp150 equivalentirfz14 equivalentirfp450 equivalentirfp250 irfp460irfce30 PDF

    1rlz44

    Abstract: 1RL530 1RLZ34 irfc9024 1RL520 IRFC9014 IRFC RF9620
    Contextual Info: International IÖ R Rectifier HEX Size Part Number HEXFETRPower MOSFETs V ds «DSM Recommended Source Bonding Wire Die Outline Figure mi|s mm Equivalent Device Type HEXFET Die 3 IRFC 9 23 0 -200 0.8 D4I 8 0.2 3 T ÌRFC9130 -I00 0.3 D40 in 0.25 [RF9530 IRFC 9 2 2 0 *


    OCR Scan
    rfc9130rfc9014irfc9024irf9630+10rf9530rf9620irf9520irfr90141rlz441rl5301rlz341rl520irfc9014irfc PDF

    for IR hexfet die

    Abstract: 90421 irfc044
    Contextual Info: PD- 91874 IRFC044 HEXFET Power MOSFET Die in Wafer Form D 60 V Size 4.0 Rds on =0.034Ω 5" Wafer G S Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


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    irfc04412-mar-07for ir hexfet die90421 PDF

    IRFB18N50K equivalent

    Contextual Info: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


    Original
    irfc18n50kbo-220100na12-mar-07+1irfb18n50k equivalent PDF

    irfc140

    Abstract: IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230
    Contextual Info: SURFACE MOUNT DEVICES o PEAK RDS ON DEVICE B V o ss *D @0.5 (D PACKAGE PAK 1 TYPE VOLTS AMPS OHMS CHIP SNLC120 100 9.2 0.27 IRFC120 SNLC220 200 5.0 0.08 IRFC220 SNLC320 400 3.3 1.80 IRFC320 SNLC420 500 2.5 3.08 IRFC420 SNLC130 100 200 14.0 0.16 IRFC130 9.0


    OCR Scan
    snlc120snlc220snlc320snlc420+16snlc130snlc230shlc330snlc430snlc140snlc240irfc140irfc9230irfc9140irfc9240irfc120irfc330irfc420irfc340irfc9130irfc230 PDF

    Contextual Info: 0.75" Light Bar FEATURES • 0.75" light bar • Suitable for backlighting OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C MAXIMUM RATINGS PART NO. PEAKViJW E LENGTH (•wi) E w rreo COLOR PC VRM W OPTO ELECTRICAL CHARACTERISTICS IRfciAJ V*c) typ- max. @mA max.


    OCR Scan
    mtlb5175-rmtlb2175-gmtlb3175-ymtlb4175-0+198-4leds PDF

    IRFP2907

    Abstract: bare Die mosfet IRFP2907 Application Notes IRFC2907B
    Contextual Info: PD - 93777 IRFC2907B HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack* l Ultra Low On-Resistance Electrical Characteristics * D l Parameter V BR DSS RDS(on)* VGS(th) IDSS IGSS


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    irfc2907b200nairfp2907bare die mosfet+1irfp2907 application notes PDF

    irfc20

    Abstract: irfb20n50k
    Contextual Info: PD - 94736 IRFC20N50KB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.25Ω


    Original
    irfc20n50kbirfc20irfb20n50k PDF

    IRFP460N equivalent

    Contextual Info: PD - 94774 IRFC460NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 500V RDS on = 0.24Ω (max.) 6" Wafer S Electrical Characteristics (TO-247 Package) Parameter V(BR)DSS RDS(on)


    Original
    irfc460nbo-247100nairfp460n equivalent PDF

    Contextual Info: PD - 95844 IRFC61N15DB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Tape and Reel, Unsawn Wafer, Sawn on Film ‚ G 150V RDS on = 0.032Ω (max.)‚ 6" Wafer S Key Electrical Characteristics (TO-220 package)d Parameter


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    irfc61n15dbo-220100na PDF

    IRFC3810B

    Abstract: IRFC3810
    Contextual Info: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


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    95826birfc3810bo-274100na+1irfc3810 PDF

    Contextual Info: PD - 94673 IRFC4104B D HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe  G Available in Chip Pack, Unsawn wafer, S Sawn on Film ‚ Key Electrical Characteristics @TJ=25°C unless otherwise specified (TO-220 package)d l l Parameter V(BR)DSS


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    irfc4104bo-220200na PDF

    shd225505b

    Contextual Info: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


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    shd225505bo-254irfc450250ma PDF

    Vgs 40V mosfet

    Abstract: IRFC1404
    Contextual Info: PD - 93776 IRFC1404 HEXFET Power MOSFET Die in Wafer Form D 40V Size 4.0 RDS on =0.0029Ω 6" Wafer G S Electrical Characteristics (Wafer Form) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance


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    irfc1404200navgs 40v mosfet PDF