IRC540 equivalent
Abstract: IRFC9034 irfc9024 IRFC9230 IRLC140 IRFC9220 IRLC120 IRF9540 equivalent IRF9640 equivalent IRL530 equivalent
Contextual Info: H EXFET International Power MOSFETs Table I. HEXFET III Die Continued HEX Size Part Number VDS RDS(on) Max Die (1) Outline Figure S Ö H R e C t if ie r Recomm. Source Bonding Wire mils I Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4
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irfc9014irfc9110irfc9210irfc9024+12irfc9120irfc9220irfc9034irfc9130irfc9230irfc9044irc540 equivalentirlc140irlc120irf9540 equivalentirf9640 equivalentirl530 equivalent
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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100hf20-100hf160100jb05l-100jb12l10ctf10-10ctf4010ctq140+1510d05-1001010df1100f810jf1-10jf410jq030-10jq1001ojtf10-10jtf4010mq040-10mq090irf164412ctq030-12ct0045irl002431d003-31d010irkt210-16irf14016cw 78irf140-143irft003
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IRFC9130
Abstract: IRFC9140
Contextual Info: INTERN ATI ONAL RECTIFIER SbE D • 4flS54S2 QG1G101 fl ■ HEXFET Die N-Channel International l&R| Rectifier > Electrical Probe Specifications for P-Channel H E X F E T f & III Power M O S FE T Die Recommended Bond Wire S i n Hex Size 1 2 3 4 Part Number
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4fls54s2qg1g101irfc9014irfc9110+7irfc9210irfc9024irfc9120irfg9220irfc9034irfc9130irfc9140
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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an-955an-9860-60van-964d+10irfc9130irfc130irlc034irlc024irfcg20irfc9014irfc110irfc9230irfc9120irfc430
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IRC540 equivalent
Abstract: IRF9540 equivalent IRL530 equivalent IRF9640 equivalent IRLC140 IRLC120 IRFC9034 irfc9120 IRFC9110 IRLC034
Contextual Info: I n t e r n a t i o n a l R e c t i f ie r n sa H HEXFET Power MOSFETS HEX Sia PartNumber Recommended Source Bonding Win mis mm Vos R0S on M" Die Olitine Rgurt -60 -100 -200 -60 -100 -200 -60 -100 -200 -100 -200 0.500 1.200 3.000 0.280 0.600 1.500 0.140
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irfc9014irfc9110irfc9210irfc9024+13irfc9120irfc9220irfc9034irfc9130irfc9230irfc9140irc540 equivalentirf9540 equivalentirl530 equivalentirf9640 equivalentirlc140irlc120irlc034
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IRFBE40
Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Contextual Info: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800
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irfk2d054irfk2d150irfk2d250irfk2d350+16irfk2d450irfk2dc50irfk2de50irfk3d150irfk3d250irfk3d350irfbe40irfbg40mosfet irf460irlc140irfc9024irfbf40irlc120irlc014irfc9034irlc034
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406J
Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC
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2n67562n67582n67602n6762+122n67682n6770irfc130irfc230irfc330irfc430406jjd 1801irfc9230irfc1102n6847irfc250
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irfc110
Abstract: IRFC9230 reco relay IRLC014
Contextual Info: AN-986 ESD Testing of MOS-Gated Power Transistors HEXFET is a tradem ark o f International Rectifier By Steve C lem en te Introduction A ll se m ic o n d u c to r c o m p o n e n ts have been proven to be static sensitive to v arying degrees. U s e r’s co n cern o n this
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an-986irfc110irfc9230reco relay+1irlc014
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FL110
Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case
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ot-89ircc044ircc140ircc240+14ircc244ircc340ircc440ircc054fl110ll110irf7408lr014irc540 equivalentirl1z14girfc024irfbe30 equivalentirfcg50irfbc10lc
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HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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an-955an-986an-966-250v+9an-964dhexfet iii - a new generation of power mosfetsirf 1490irfc90241000v p-channel mosfetapplication new hexfetan966transistor 9527irfc210
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