4FLS54S2 Search Results

Contextual Info: i 4flS54S2 International k Rectifier 0=17 • IN R PD-9.656A IRFPC50 INTERNATIONAL HEXFET® Power M O SFET • • • • • • DD1S574 RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

IRFC9130

Abstract: IRFC9140
Contextual Info: INTERN ATI ONAL RECTIFIER SbE D • 4flS54S2 QG1G101 fl ■ HEXFET Die N-Channel International l&R| Rectifier > Electrical Probe Specifications for P-Channel H E X F E T f & III Power M O S FE T Die Recommended Bond Wire S i n Hex Size 1 2 3 4 Part Number

IRFPE60

Abstract: dioda rectifier IRFPE50 IRFPE52 MOSFET 800V 10A UJ 7.8A UJ 78A dioda J2E S/IRFPE52 -250/IRFPE60
Contextual Info: INTERNATIONAL RECTIFIER HE D I 4055452 0000044 Data Sheet No. PD-9.573A 7 ^ 3 J- i S ' I NT ERNATIONAL R E C T I FI ER INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE AND dv/dt RATED H E X F E T T R A N S IS T O R B IR F P E 5 Q IR F P E 5 2 :r N-CHANNEL

k 3525 MOSFET

Abstract: IRFR110 FR110 ir 9524B fr110 FR110 b optron IRFR111 IRFU110 IRFU111
Contextual Info: HE T-35-25 Data Sheet No. PD-9.524B D I 4055452 aoaö27b Ü | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFR110 ÎRFR111 IRFU110 IRFU111 HEXFET TRANSISTORS ' ] N -C H A N N E L

Contextual Info: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

UAA 1250

Abstract: S23A S23A14A S23A16A UAA 3000 12V 5A rectifier uaa 1300 UAA 4000 S
Contextual Info: 4855452 INTERNATIONAL RECTI F I E R 02E 07721 D Data sneet IN T E R N A T IO N A L R E C T IF IE R IO R ~0S D E | 4Û5S45E n o . k u - ò .u 91 GÜÜ < f d i — n r «I r\ I - ¿ D - 1 » S23A SERIES 1600-1000 VOLTS RANGE 510 AMP RMS, RING AMPLIFYING GATE

F7103

Contextual Info: I n t e r n a t io n a l p° 9 ' “ “ jeor R ectifier preliminary IR F7103 HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating

Contextual Info: P D -9.1584 International IG R Rectifier IRG4PC40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 k H z , and Short

Contextual Info: International [^Rectifier Data Sheet No. PD-6.018A IR2121 CURRENT LIMITING LOW SIDE DRIVER Product Summary Features • Gate drive supply range from 12 to 18V ■ Undervoltage lockout ■ Current detection and limiting loop to limit driven power transistor current

Contextual Info: Bulletin 127400 rev. A 09/97 International iffiR Rectifier IRK.430. SERIES THYRISTOR / DIODE and THYRISTOR / THYRISTOR SUPER MAGN-A-pak Power Modules Features • High current capability ■ 3000 V RMS Isolating voltage with non-toxic substrate ■ High surge capability

Contextual Info: PD - 9.1240C International ie R Rectifier IRF7304 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V qss = -20 V

c331 transistor

Contextual Info: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to

irf244

Abstract: pd9528 irf244r
Contextual Info: 11E D I 4055452 Q QQTI Q1* ^ | Data Sheet No. PD-9.528A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖ R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF2 4 4 IRF2 4 5 N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-204AA TO-3 Hermetic Package

vida my

Abstract: S52KF d1dt 102s10 5A/1/S52KF
Contextual Info: INTERNATIONAL IO R RECTIFIER in t e r n a t io n a l 73 DE|4â55452 ODDTOT? fc. | Data Sheet No. PD-3.175 RECTIFIER S52KF SERIES 2000-1800 VOLTS RANGE STANDARD TURN-OFF TIME 60 / j s 1500 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs VOLTAGE RATINGS

Contextual Info: International IS Rectifier Preliminary Data Sheet No. PD-6.102 IR2233 3-PHASE BRIDGE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +1200V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: PD-2.446 bïtemational S Rectifier HFA140NH60R HEXFREDT Ultrafast, Soft Recovëry Diode LUG TERM INAL CATHO DE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Vr 600V = Vf = 1.6V A i Qrr * = 1400nC

Contextual Info: PD - 9.1613A International IG R Rectifier IRF7413A PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching Vdss = 30V

diode C721

Abstract: c719 transistor
Contextual Info: PD - 9.808A kitemational lüRectifier IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: PD-9.1011 International Rectifier IRF820S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 500 V R DS on = 3-OQ

dioda rectifier

Abstract: DF DIODA dioda rectifier 16 A
Contextual Info: * INTERNATIONAL RECTIFIER 73 DE~| MASS4SS □□□704e] b Il O R in t e r n a t io n a l r e c t if ie r Data Sheet No. PD-3.164 S34BF SERIES 1200-1000 VOLTS RANGE STANDARD TURN-OFF TIME 16 / j s 715 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs

Contextual Info: PD - 9.695A International IM lRectifier IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

IRGBC40

Contextual Info: INTER NAT IONAL RECTIFIER SbE D • HfiSSMSS QDIQbOT 0 ■ Data Sheet No. PD-9.627A T -3 °l -03 International INSULATED GATE BIPOLAR TRANSISTOR S ^ lR G C t if te r IRGBC40 6QOV, 4QA FEATURES 600V, 40A, TO-220AB IGBT International Rectifier's IRG series of Insulated Gate

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

ma 8920

Abstract: dioda rectifier 04140 tny 226 dioda 12B 750PEF10 750PEF40 power dioda cross 9BB. GI 8920
Contextual Info: INTERNATIONAL RECTIFIER 4855452 INTERNATIONAL RECTIFIER 4T DE§4flSS452 DD047B4 b Data Sheet No. P D -3.06f 49C 04734 C INTERNATIONAL RECTIFIER I R 1 180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description The 750PEF series of fast turn-off thyristors use centre