4FLSS45E Search Results

IRFF231

Abstract: g358 IRFF230 IRFF232 IRFF233 g-355 2sca
Contextual Info: HE D I 4flSS45E 000^371. 1 | Data Sheet No. PD-9.354E INTERNATIONAL R E C T I F I E R tr IN T E R N A T IO N A L R E C T IF IE R I O R T-39-09 HEXFET T R A N S IS T O R S IRFF230 ^—"î0 IRFF231 N-CHANNEL POWER M O SFET s TO-39 P A C K A G E 200 Volt, 0.4 Ohm HEXFET

diode ed 85

Contextual Info: PD-2.458 International Hü Rectifier HFA140NJ60C HEXFRED* Ultrafast, Soft Recovery Diode i. i LUG TERMINAL ANODE 1 Features • Reduced RFi and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMNAL ANODE 2 V r = 600V V F = 1.5V

irfbc40

Contextual Info: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

Contextual Info: | f a| f j 0 | * | ^ c | f j j Q | ^ £ | | •! 4655452 DDlMB^b SQ3 M I N R Rectifier HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling

Contextual Info: PD-9.1000 International j»g Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer

k 3525 MOSFET

Contextual Info: HE D I Data Sheet No. PD-9.523B MâssMsa QOüôaaM g I INTERNATIONAL T-35-25 RECTIFIER INTERNATIONAL RECTIFIER P O O R I REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFR120 IRFR121 IRFU1SO IRFU121 N-CHANNEL Product Summary

g409

Abstract: g407 G-408 IRFF110 IRFF9210 IRFF9211 IRFF9212
Contextual Info: HE D I MASSMsa GG[n43a 0 I Data Sheet No. PD-9.382E INTERNATIONAL RECTIFIER in t e r n a t io n a l r e c t i f i e r HEXFET TRANSISTORS I O R IRFF9S1Q IRFF921 1 P-CHANNEL POWER MOSFETs TG-39 PACKAGE IRFF9S12 IRFF9S13 -200 Volt, 3.0 Ohm HEXFET T h e H E X F E T » technology is the key to International Rectifier’s

pg74

Contextual Info: “ INTERNATIONAL RECTIFIER IO R 73 D e | 4ÛSS4S2 QOGbT?! ñ | ' p —z . S - i f Data Sheet No. PD-3.153 in t e r n a t io n a l r e c t if ie r S34DF SERIES 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 370 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

Contextual Info: |nflS S 45E ^855452 00DS0tj7 T INTERNATIONAL 5sC 0 5 0 6 7 RECTIFIER D Data Sheet No. PD-2.056A T ~ 6 S ~ n TOR INTERNATIONAL RECTIFIER SOCTQ & 30CTQ SERIES SO S, 3 0 Amp Dual Schottky Center Tap Rectifiers Major Ratings and Characteristics Iq Characteristic

Contextual Info: International BgllRectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Transistor C604

Contextual Info: PD - 9.780A International ïo r Rectifier IRGP430U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

y911

Abstract: 100MS
Contextual Info: 4 8 55452 INTERNATIONAL R E C T t Ì” d I HñSSMSS 0G070S5 J. | I« R | in te r n a tio n a l r e c t if ie r _ T"~ 2 , 5 " Data Sheet No. PD-3.163 IN TERNATI ONAL RECTIFIER 73 D E | 405545E D0070SS 1 S34BF & S34BFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 fjs

G408

Abstract: G409 g411 G-407 g407
Contextual Info: HE D I MASSMsa GG[n43a 0 I Data Sheet No. PD-9.382E INTERNATIONAL RECTIFIER in t e r n a t io n a l r e c t i f i e r HEXFET TRANSISTORS IO R IRFF9S1Q IRFF921 1 P-CHANNEL POWER MOSFETs TG-39 PACKAGE IRFF9S12 IRFF9S13 -200 Volt, 3.0 Ohm HEXFET T h e H E X F E T » technology is the key to International Rectifier’s