IRFU12 Search Results

ifr120

Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRFR120 siliconix

Abstract: IRFR120 SiHFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode
Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

tt 93 n 08

Contextual Info: PD - 9.1365A HEXFET Power MOSFET • • • • • Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

IRFU120Z

Abstract: IRFR120Z
Contextual Info: PD - 95772A IRFR120ZPbF IRFU120ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

Contextual Info: PD - 94754 IRFR120Z IRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 190mΩ

IRFU120

Abstract: U120
Contextual Info: PD - 95067A IRFR/U120NPbF • Lead-Free 1 IRFR/U120NPbF 2 IRFR/U120NPbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H ASS EMB LY LOT CODE 5678 AS SEMBLED ON WW 19, 1999

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION

Contextual Info: IRFR120/121 IRFU120/121 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V RDS on = 190mΩ

Contextual Info: PD - 91365B IRFR/U120N HEXFET Power MOSFET l l l l l Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.21Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: IRFU121 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)8.4# I(DM) Max. (A) Pulsed I(D)5.9# @Temp (øC)100 IDM Max (@25øC Amb)34# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55õ

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF

k 3525 MOSFET

Contextual Info: HE D I Data Sheet No. PD-9.523B MâssMsa QOüôaaM g I INTERNATIONAL T-35-25 RECTIFIER INTERNATIONAL RECTIFIER P O O R I REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFR120 IRFR121 IRFU1SO IRFU121 N-CHANNEL Product Summary

TO-251AA

Abstract: ipak
Contextual Info: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current

IRFZ44N APPLICATION NOTE

Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit
Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

IRF 810

Abstract: AN1001 IRFR120 IRFR12N25D IRFU120 IRFU12N25D 220 110 transformer
Contextual Info: PD - 94296 IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRFU120

Abstract: TO-251AA Package TO-251AA U120
Contextual Info: PD - 95015A IRFR9024NPbF IRFU9024NPbF • Lead-Free 1 IRFR/U9024NPbF 2 IRFR/U9024NPbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H ASS EMBLY LOT CODE 5678

AN-994

Abstract: IRF520N IRFR120N IRFU120N
Contextual Info: PD - 9.1365A IRFR/U120N PRELIMINARY HEXFET Power MOSFET l l l l l Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.21Ω G ID = 9.3A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

95523a

Abstract: EIA-541 IRFR120 IRFU120 U120
Contextual Info: PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free www.irf.com 1 12/03/04 IRFR/U120PbF 2 www.irf.com IRFR/U120PbF www.irf.com 3 IRFR/U120PbF 4 www.irf.com IRFR/U120PbF www.irf.com 5 IRFR/U120PbF 6 www.irf.com IRFR/U120PbF Peak Diode Recovery dv/dt Test Circuit

Contextual Info: PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF

Contextual Info: PD- 95523 IRFR120PbF IRFU120PbF • Lead-Free www.irf.com 1 07/08/04 IRFR/U120PbF 2 www.irf.com IRFR/U120PbF www.irf.com 3 IRFR/U120PbF 4 www.irf.com IRFR/U120PbF www.irf.com 5 IRFR/U120PbF 6 www.irf.com IRFR/U120PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations