IRFR120 Search Results

ifr120

Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRFR120 siliconix

Abstract: IRFR120 SiHFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode
Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

tt 93 n 08

Contextual Info: PD - 9.1365A HEXFET Power MOSFET • • • • • Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

IRFU120Z

Abstract: IRFR120Z
Contextual Info: PD - 95772A IRFR120ZPbF IRFU120ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

Contextual Info: PD - 94754 IRFR120Z IRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 190mΩ

IRFU5505PBF

Abstract: dpak code EIA-541 IRFR120 IRFU120 international rectifier code TO252AA
Contextual Info: PD - 95077A IRFR5505PbF IRFU5505PbF • Lead-Free 1 IRFR/U5505PbF 2 IRFR/U5505PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 1234

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION

TO252AA

Abstract: EIA-541 IRFR120 IRFU120 TO-252AA
Contextual Info: PD - 95028A IRFR310PbF IRFU310PbF • Lead-Free 1 IRFR/U310PbF 2 IRFR/U310PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234

Contextual Info: IRFR120/121 IRFU120/121 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V RDS on = 190mΩ

Contextual Info: PD - 91365B IRFR/U120N HEXFET Power MOSFET l l l l l Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.21Ω G Description The D-PAK is designed for surface mounting using

irfb220

Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Contextual Info: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF

AN-1005

Contextual Info: PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V RDS on = 190mΩ

EIA-541

Abstract: IRFR120 IRFU120
Contextual Info: PD - 95601A IRLR110PbF IRLU110PbF • Lead-Free 1 IRLR/U110PbF 2 IRLR/U110PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234

TO-252AA Package

Abstract: TO-252AA TO252AA Marking Code 619 dpak code EIA-541 IRFR120 IRFU120 TO 252AA Package 252AA
Contextual Info: IRLR/U3410PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" PART NUMBER

TO-252AA Package

Abstract: EIA-541 IRFR120 IRFU120 IRFU110PBF international rectifier code TO252AA IRFR110PBF
Contextual Info: PD - 95026A IRFR110PbF IRFU110PbF • Lead-Free 1 IRFR/U110PbF 2 IRFR/U110PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999

k 3525 MOSFET

Contextual Info: HE D I Data Sheet No. PD-9.523B MâssMsa QOüôaaM g I INTERNATIONAL T-35-25 RECTIFIER INTERNATIONAL RECTIFIER P O O R I REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFR120 IRFR121 IRFU1SO IRFU121 N-CHANNEL Product Summary

IRFR120

Abstract: IRFR121
Contextual Info: N-CHANNEL POWER MOSFETS IRFR120/121 FEATURES • • • • • • • Lower R d s <o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

IRFZ44N APPLICATION NOTE

Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit
Contextual Info: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using

AN-994

Abstract: IRF520N IRFR120N IRFU120N
Contextual Info: PD - 9.1365A IRFR/U120N PRELIMINARY HEXFET Power MOSFET l l l l l Surface Mount IRFR120N Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.21Ω G ID = 9.3A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRFR120 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)7.4# I(DM) Max. (A) Pulsed I(D)4.9 @Temp (øC)100# IDM Max (@25øC Amb)31# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)42# Minimum Operating Temp (øC)-55õ