IRFR9111 Search Results

irfb220

Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Contextual Info: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111

FR9110

Abstract: FR91 1RFR9020 Samsung D-PAK IRFR9022 IRFR9120 IRFR9121 IRFR9210 IRFR9212
Contextual Info: - mA SÜ £ it % i £ fg Ta=25t> Vd s or Vd g Vg s (V) (V) Id Pd * /CH * /CH (A) m E& Vg s th) Id s s Igss Vg s (V) (H A ) Vd s (V) (V) (V) Id (mA) (max) *typ V g s ( 0 ) (V) SAMSUNG SAMSUNG P P -50 -50 0. 28 0. 33 1RFR9110 IRFR9111 1RFR9120 IRFR9121 IRFR9210

irc832

Contextual Info: H EXFET Power MOSFETs International S Rectifier H EXSense Current Sensing N-Channel Part Number IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current 2S°C Casa (Amps) >DM Pu'*

IRFR012

Abstract: IRFR411
Contextual Info: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120

IRF 9110

Abstract: FR9110 FU9110 IRFR9111
Contextual Info: HE INTERNATIONAL RECTIFIER D | MÖS5452 QQQÖ324 7 | Data Sheet No. PD-9.519B T-37-25 IOR INTERNATIONAL- RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9110 IRFRS111 IRFU9110 IRFU9111 P -C H A N N E L Product Summary -100 Volt, 1.2 Ohm HEXFET

Contextual Info: IRFR9110/9111 IRFU9110/9111 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

IRFP9640

Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
Contextual Info: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ

sot89 footprint

Abstract: INTERNATIONAL RECTIFIER 9516 9524 IRFR20 IRFS1Z0 T0252AA 9519 9520
Contextual Info: SURFACE MOUNT HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER lIO R l *4Ö S S 4 S 2 2bE D QG1DSS2 ~T~3c -03 Ô • Surface Mount Packages N-CHANNEL Types Vos Q max) V Iq cont Tq - 25°C 'DM pulsed PD max A A W r 0S(0N) Bulletin IRFS1Z3 60 3.20 0.75

IRFS1Z3

Abstract: IRFR121 IRFR014 IRFR024 IRFR110 IRFR111 IRFR120 IRFR210 IRFR212 IRFR220
Contextual Info: SURFACE MOUNTED DEVICES INTERNATIONAL RECTIFIER ICR O ' CONTENTS E- Page p- APPLICATION DETAILS DIODES — SCHGTTKY — STANDARD RECOVERY — ULTRA FAST RECOVERY ENCAPSULATED BRIDGES FOOTPRINT AND PAD DIMENSIONS HEXFETs MILITARY CAPABILITY OUTLINES TAPE REEL INFORMATION

IRC540

Abstract: irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E
Contextual Info: THOMSON/ DISTRIBUTOR 5ÖE TCSK D HEXFET Power MOSFETs International S»] Rectifier HEXSense Current Sensing N-Channel Part Number Vq s Drain Source Voltage Volts IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC832 IRC830

IRFS1Z0

Abstract: IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
Contextual Info: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­

FR9110

Abstract: 1RFR9020 irfb220 IRFS1Z3 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
Contextual Info: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0