IRFR9121 Search Results

pj 88 diode

Abstract: pj 59 diode irfu9120 pj 84 diode IRFR9120 irfr 9120 irfu9121 IRFR9121 irff* p-channel hexfet C82 diode
Contextual Info: HE D | MflSSMSS Q0Qfl332 fc» | Data Sheet No. PD-9.520B INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9120 IRFR9121 IRFUS120 IRFU0121 P -C H A N N E L -100 Volt, 0.60 Ohm HEXFET

FR9110

Abstract: FR91 1RFR9020 Samsung D-PAK IRFR9022 IRFR9120 IRFR9121 IRFR9210 IRFR9212
Contextual Info: - mA SÜ £ it % i £ fg Ta=25t> Vd s or Vd g Vg s (V) (V) Id Pd * /CH * /CH (A) m E& Vg s th) Id s s Igss Vg s (V) (H A ) Vd s (V) (V) (V) Id (mA) (max) *typ V g s ( 0 ) (V) SAMSUNG SAMSUNG P P -50 -50 0. 28 0. 33 1RFR9110 IRFR9111 1RFR9120 IRFR9121 IRFR9210

irc832

Contextual Info: H EXFET Power MOSFETs International S Rectifier H EXSense Current Sensing N-Channel Part Number IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current 2S°C Casa (Amps) >DM Pu'*

FR9120

Abstract: 9121
Contextual Info: IRFR9120/9121 IRFU9120/9121 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRFR012

Abstract: IRFR411
Contextual Info: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

IRFR9120

Abstract: 5CEG
Contextual Info: P-CHANNEL POWER MOSFETS IRFR9120/9121 FEATURES • • • • • • • Lower R d s ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

IRFP9640

Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
Contextual Info: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ

sot89 footprint

Abstract: INTERNATIONAL RECTIFIER 9516 9524 IRFR20 IRFS1Z0 T0252AA 9519 9520
Contextual Info: SURFACE MOUNT HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER lIO R l *4Ö S S 4 S 2 2bE D QG1DSS2 ~T~3c -03 Ô • Surface Mount Packages N-CHANNEL Types Vos Q max) V Iq cont Tq - 25°C 'DM pulsed PD max A A W r 0S(0N) Bulletin IRFS1Z3 60 3.20 0.75

IRFS1Z3

Abstract: IRFR121 IRFR014 IRFR024 IRFR110 IRFR111 IRFR120 IRFR210 IRFR212 IRFR220
Contextual Info: SURFACE MOUNTED DEVICES INTERNATIONAL RECTIFIER ICR O ' CONTENTS E- Page p- APPLICATION DETAILS DIODES — SCHGTTKY — STANDARD RECOVERY — ULTRA FAST RECOVERY ENCAPSULATED BRIDGES FOOTPRINT AND PAD DIMENSIONS HEXFETs MILITARY CAPABILITY OUTLINES TAPE REEL INFORMATION

IRC540

Abstract: irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E
Contextual Info: THOMSON/ DISTRIBUTOR 5ÖE TCSK D HEXFET Power MOSFETs International S»] Rectifier HEXSense Current Sensing N-Channel Part Number Vq s Drain Source Voltage Volts IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC832 IRC830

IRFS1Z0

Abstract: IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
Contextual Info: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0

Contextual Info: IRFR9120/9121 IRFU9120/9121 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

FR9110

Abstract: 1RFR9020 irfb220 IRFS1Z3 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
Contextual Info: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

T3B diode

Contextual Info: «S IIG K T3B P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability