IRF511 Search Results

irf510

Abstract: IRF511 irf512 jrf512 TA17441
Contextual Info: if* ? S IRF510, IRF511, IRF512, IRF513 S e m ico n d ucto r y 7 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Description Features 4.9A, and 5.6A, 80V and 100V High Input Impedance These are N-Channel enhancement mode silicon gate

irf510

Abstract: transistor irf510 irf510 Motorola IRF511 IRF 511 Transistor motorola 513
Contextual Info: MOTOROLA SC X S T R S /R F I b3b?2S4 1ME D MOTOROLA QüäTböl 7 I IRF510 IRF511 IRF512 IRF513 •i SEMICONDUCTOR TECHNICAL DATA Part Number V DS N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR IRF510 100 V rDS on 0.6 n IRF511 60 V

1rf510

Abstract: 1rf510 n-channel irf511 irf510 IRF512 IRF513 1RF511 20W Solenoid Driver transistor irf510 IRF510 complementary
Contextual Info: SUPERTEX □1 INC D E l f l 7 7 3 2 c]S □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information W n min) Order Number / Package (max) 100V 60V 0.6Q 0.6Q 4.0A 4.0A IRF510 IRF511

MOSFET IRF 570

Abstract: IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola
Contextual Info: MOTOROLA IRF510 IRF511 IRF512 IRF513 SEMICONDUCTOR TECHNICAL DATA Part Num ber v Ds N-CHANNEL ENHANCEMENT-MO DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR IRF510 100 V 0.6 n IRF511 60 V 0.6 0 4.0 A These TM OS Power FETs are designed for low voltage, high

Contextual Info: IRF511R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)4.0# @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43 Minimum Operating Temp (øC)-55õ

IRF510

Abstract: IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET IRF512 RELAY HGS RF510 IRF513
Contextual Info: Standard Power MOSFETs- IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N -C H A N N EL E N H AN C E M E N T MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 3.5A and 4.0A, 60V-100V

IRF510 application note

Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
Contextual Info: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513

IRF510

Abstract: IRF510 MOSFET transistor equivalent irf510 irf510 pdf switch irf510 datasheet IRF511 transistor irf510 IRF512 IRF510-2 TA17441
Contextual Info: IRF510, IRF511, IRF512, IRF513 Semiconductor 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF510

Abstract: IRF511 IRF512 power mosfet irf511 irf510 power IRF513 TA17441 TB334 IRF510 MOSFET IRF510-2
Contextual Info: IRF510, IRF511, IRF512, IRF513 S E M I C O N D U C T O R 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

SSP60N06

Abstract: irf630 irf640 SSP50N06 ssp15n06
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520

IRF510

Abstract: IRF511 irf513 irf512 IRF-510
Contextual Info: □1 SUPERTEX INC D E £ 07732^5 □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Inform ation b v dss/ ^DS ON (max) W n) (min) Order Number / Package ^D G S 100V 60V 0.6Q 0.6Q 4.0A

IRF510R

Abstract: dioda dioda rectifier l00a 250M IRF511R IRF512R IRF513R
Contextual Info: _ Rugged Pow er M O SFETs File Num ber IRF510R, IRF511R, IRF512R, IRF513R 1995 Avalanche Energy Rated N-Channel Power MOSFETs 3.5A and 4.0A, 60V-100V ros on = 0.6 0 and 0.80 N-CHIANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■ Single pulse avalanche energy rated

IRFS12

Abstract: IRF511 1RF512 IRF51G IRFS10 CC035 IRF510 MOSFET transistor irf510 IRF512 IRF 511 MOSfet
Contextual Info: 01 3075001 ODIÖSEM 1 |~~ 3875081 G E S O L I D S T A T E Standard Power MOSFETs 0 1E 18329 _ IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

Transistor c 4138

Abstract: TIP36 Application Note RFK25 IRF540 p channel
Contextual Info: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback

IRF510

Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

MTP8N10

Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

irf411

Abstract: IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430
Contextual Info: - 252 - Mi X m % *± « * % Vd s or Vdg V £ Vg s Pd Id * /CH (V) 11 fé (Ta= 25 tJ) (A) Vg s th) I d ss I g ss * /CH <W) min (nA) Vg s (V) (u A ) Vd s (V) (V) Id («A ) fó f Ds(on) Vrs= Vg s max (V) % te (Ta=25cO ) I d ( on) C i ss g fs Coss C rss % &

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main