IRF452 Search Results

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF450 transistor

Abstract: irf450 mosfet 452 IRF452 mosfet IRF450
Contextual Info: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high

Contextual Info: IRF452 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.2 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

1RF620

Abstract: 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF450A

Abstract: IRF450R IRF452R IRF 450 MOSFET I300 IRF451R IRF453R
Contextual Info: Rugged Power MOSFETs_ IRF450R, IRF451R, IRF452R, IRF453R File Number 2008 Avalanche Energy Rated N-Channel Power MOSFETs N -C H A N N E L E N H A N C E M E N T M O D E 12A and 13A, 450V-500V rDs on = 0.4Q and 0.50 D Feature*: • Single pulse avalanche energy rated

T10N5

Abstract: IRF452 IRF453 DM 48
Contextual Info: FIT IRF452,453 12 AMPERES 500, 450 VOLTS Rd S ON = 0.5 n HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

IRF452

Abstract: IRF453 IRF451 irf450
Contextual Info: IRF450, IRF451, IRF452, IRF453 S E M I C O N D U C T O R 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

IRF360

Abstract: irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF411

Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF449

Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Contextual Info: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452

IRF452

Abstract: IRF450 IRF451 irf453
Contextual Info: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

RF432

Abstract: IRF449 IRF460 IRFac32
Contextual Info: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32

IRF461

Abstract: IRF452 IRF450 mosfet IRF450 IRF463 IRF 450 MOSFET irf460 MOSFET IRF460 100-C IRF451
Contextual Info: 01 i>Ë| 3fl7SGöl G01Ô3S4 2 3 8 7 5 0 8 1_ G E_SOL ID STATE 01E 18324 D T~37~f3 Standard Power MOSFETs File Nu m b er 1827 IRF450, IRF451, IRF452, IRF453 Power M O S Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E N -Channel Enhancem ent-Mode

irf 44 n

Abstract: irf 44 ns IRF 450 irf 451 IRF452 smps 450 W irf transistors IRF P channel IRF451
Contextual Info: Æ 7 IRF 450 - 451 IRF 452 - 453 S G S -T H O M S O N “ /# „ M M o IÜ IigïO M ïffl S § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^ D S (o n ) IRF450 500 V 0.4 O IRF451 450 V 0.4 0 13 A IRF452 500 V 0.5 11 A IRF453 450 V 0.5 fi fi

IRF448

Abstract: IRF449 irf9243 IRFAG52 IRFAF30 irf420 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: THONSON/ DISTRIBUTOR SflE D • TD5t,fl73 DDDSflOfl T4b ■ TCSK W ggggg H EX FETw »«, — r c e c u iie r Hermetic Package l TO-3 N-Channel Part Number V p s Drain Source Voltage Volts IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452

Contextual Info: IRF452R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.2 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

IRF450

Abstract: mosfet IRF450 IRF451 IRF452 IRF453 IRF 450 MOSFET sim 300s
Contextual Info: - Standard Power MOSFETs File Num ber IRF450, IRF451, IRF452, IRF453 1827 Power MOS Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E

irf450

Abstract: diode F451 IRF452 IRF451
Contextual Info: iH A R R is SEUIC0NDUCT0R IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF452

Abstract: IRF450
Contextual Info: h e o I MassMsa odgiitö □ | INTERNATIONAL Data Sheet No. PD-9.322I re c tifie r INTERNATIONAL RECTIFIER I«R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* IRF45Q IRF451 IRF452 IRF453 HEXFET TRANSISTORS N-CHANNEL 500 Volt, 0.40 Ohm HEXFET TO-204AA TO-3 Hermetic Package

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

DATA SHEET IRF331

Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i