IRF621 Search Results

IRF6215

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

IRF621

Abstract: IRF620
Contextual Info: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

irf6217trpbf

Abstract: AN 9525.2
Contextual Info: PD - 95252 SMPS MOSFET IRF6217PbF HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

Contextual Info: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated

Contextual Info: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2

AN1001

Abstract: IRF6218
Contextual Info: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRF6218

Abstract: AN1001 marking code 27a
Contextual Info: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PD - 95132 IRF6215S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF6216PbF-1 HEXFET Power MOSFET VDS -150 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.24 Ω 33 nC -2.2 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

IRF 504

Abstract: irf 418
Contextual Info: PD - 95132 IRF6215S/LPbF • Lead-Free 1 IRF6215S/LPbF 2 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INTERNAT IONAL RECTIF IER LOGO ASS EMBLY

AN1001

Abstract: IRF 860
Contextual Info: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

IRFP 620

Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
Contextual Info: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V

Contextual Info: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2

IRF AN1001

Abstract: IRF6218S AN1001 IRF6218L IRF6218S-l
Contextual Info: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

IRF6216

Abstract: AN1001 9429
Contextual Info: PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

IRF6217

Abstract: AN1001
Contextual Info: PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

AN1001

Contextual Info: PD - 96181 SMPS MOSFET HEXFET Power MOSFET Applications l IRF6218SPbF IRF6218LPbF VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

F7101

Abstract: EIA-541 IRF7101
Contextual Info: IRF6217PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 .0098 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574

Contextual Info: PD - 96181 SMPS MOSFET IRF6218SPbF IRF6218LPbF HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

Contextual Info: PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF6215S l Low-profile through-hole (IRF6215L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS(on) = 0.29Ω

Contextual Info: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

Contextual Info: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including