9429 Search Results

MIL-PRF-19500 schottky rectifier

Abstract: 35CGQ045
Contextual Info: PD -94298A 35CGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features The 35CGQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated

TRANSISTOR N 1380 600 300 SC

Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
Contextual Info: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

IRHNJ57133SE

Abstract: SMD 365A
Contextual Info: PD - 94294 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57133SE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57133SE 100K Rads (Si) RDS(on) 0.08Ω ID 20A SMD-0.5 International Rectifier’s R5TM technology provides

ITT DIODE

Abstract: 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G 1A211001G EECO 2100 1A210001G EECO Switch EECO itt rotary switch 14 positions
Contextual Info: CROSS REFERENCE GUIDE EECO SWITCH To ITT/ C & K PRODUCTS EECO Switch A Transico Company 800 854-3808 (714) 835-6000 FAX: (714) 482-9429 Web: www.eecoswitch.com E-Mail: sales@eecoswitch.com Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT/ C &K

IRHNA63160

Abstract: IRHNA67160
Contextual Info: PD - 94299A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) RDS(on) 0.01Ω ID 56A* 0.01Ω 56A* SMD-2 International Rectifier’s R6 technology provides

GA100NA60U

Abstract: ga100na60
Contextual Info: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

LTM-9341

Abstract: lt 7209 LT 7227 LTD482RC TS550 LTC4727E TS-311A ta7235 LT 7232 LTL-423IN
Contextual Info: ALPHANUMERIC INDEX LBL-9316G . 5-11 LB L -9429G . 5-14 L L S-9308G -

Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

mosfet 1200V 40A

Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD - 94292 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3205 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3205 55V RDS(on) 0.015Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

R191737

Abstract: R191.737.000 CONECTOR
Contextual Info: RAMALL TECHNICAL DATA COAXIAL CONCCTORS ADAPTOR HN M - N F R191.737.000 Issue : 9429 Page 1 Series : ADAPT STO 50 E / 1 DIA 0.906 023 - 1.496-(38) CABLES : CHARACTERISTICS 50 O 0”3 GHz “55/+155 ’C TBO + - X F(GHz)Maxi NOMINAL IMPEDANCE

Contextual Info: PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

9429a

Contextual Info: A P R O G R A M M A B LE SYNERGY fr e q u e n c y s y n th e s iz e r 25MHz to 400MHz SEMICONDUCTOR CI0Csw 9429a DESCRIPTION FEATURES Improved jitter performance over 9429 25 to 400MHz differential PECL outputs ±25ps peak-to-peak output jitter Minimal frequency over-shoot

IRG4IBC30S

Contextual Info: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRF6216

Abstract: AN1001 9429
Contextual Info: PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

IRG4IBC30S

Contextual Info: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRHNJ57133SE

Abstract: SMD 365A
Contextual Info: PD - 94294B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57133SE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57133SE 100K Rads (Si) RDS(on) 0.08Ω ID 20A SMD-0.5 International Rectifier’s R5TM technology provides

Contextual Info: PD -94298 35CGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features The 35CGQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated

Contextual Info: PD - 94294A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57133SE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57133SE 100K Rads (Si) RDS(on) 0.08Ω ID 20A SMD-0.5 International Rectifier’s R5TM technology provides

IRF 810

Abstract: AN1001 IRFR120 IRFR12N25D IRFU120 IRFU12N25D 220 110 transformer
Contextual Info: PD - 94296 IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRF (10A) 55V

Abstract: IRF5M3205
Contextual Info: PD - 94292A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3205 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3205 55V RDS(on) 0.015Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

mosfet 1200V 40A

Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
Contextual Info: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.