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Renesas Electronics Corporation
IRF623R - Bulk (Alt: IRF623R)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet IRF623R Bulk 0 1 Weeks 1 - - - - - Get Quote
Harris Semiconductor
IRF623 4.0A, 150V, 1.2 OHM, N-CHANNEL POWER MOSFET
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Rochester Electronics IRF623 737 1 $0.4 $0.4 $0.36 $0.33 $0.33 Buy Now

IRF623 datasheet (26)

Part Manufacturer Description Type PDF
IRF623 Fairchild Semiconductor N-Channel Power MOSFETs, 7A, 150-200V Scan PDF
IRF623 FCI POWER MOSFETs Scan PDF
IRF623 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF623 General Electric Power Transistor Data Book 1985 Scan PDF
IRF623 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. Scan PDF
IRF623 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF623 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF623 Motorola European Master Selection Guide 1986 Scan PDF
IRF623 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF623 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF623 Others FET Data Book Scan PDF
IRF623 Others Shortform Datasheet & Cross References Data Scan PDF
IRF623 Others Shortform Transistor PDF Datasheet Scan PDF
IRF623 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF623 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF623 National Semiconductor N-Channel Power MOSFETs Scan PDF
IRF623 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
IRF623 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Scan PDF
IRF623 STMicroelectronics Shortform Data Book 1988 Scan PDF
IRF623 Vishay Siliconix Shortform Siliconix Datasheet Scan PDF

IRF623 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
irf620

Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622
Text: h a r r is January 1998 IRF620, IRF621, IRF622, IRF623 4.0A and 5.0A, 150V and 200V, 0.8 and , IRF621 IRF622 IRF623 PACKAGE T 0-2 2 0 A B T 0-2 2 0 A B T 0-2 2 0 A B TO-22QAB BRAND IRF620 IRF621 IRF622 IRF623 NOTE: When ordering, use the entire part number. Packaging JEDEC T 0-220A B SOURCE , Procedures. Copyright © Harris Corporation 1997 , File Number 1577 2 IRF620,1RF621 IRF622, IRF623 , 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 300 260 IRF623 150 150 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 300


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PDF IRF620, IRF621, IRF622, IRF623 TA9600. RF621, RF622, RF623 irf620 IRF620 HARRIS IFR622 1RF621 irf623 irf622
IRF621

Abstract: IRF620
Text: 3 ^* 7/ N-channel enhancement mode vertical DMOS FET IRF620 IRF621 IRF622 IRF623 FEATURES · · · , IRF623 b v dss ·d 5A 5A 4A 4A RdS(od) 0.8Q 0.8(1 1.2Q 1.2(1 200V 150V 200V 150V G , IRF620 IRF621 IRF622 IRF623 ABSOLUTE MAXIMUM RATINGS Parameter VDs ·d !dm V qs Pd "n* t 6,b Orain-source , T '3 1 -1 1 IRF622 200 4 16 ±20 40 IRF623 Units 150 4 16 ±20 40 V A A V W °C - 55 to + 1 5 0 , voltage Part No. Min. IRF620 IRF622 IRF621 IRF623 V GS(th) Ig s s ·d s s Max. 4 500 250 1000 Unit V


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PDF IRF620 IRF621 IRF622 IRF623 O-220
1997 - IRF620

Abstract: IRF621 IRF620 HARRIS TB334 IFR622 IRF623 harris TA9600 IRF623 IRF622 IFR623
Text: IRF620, IRF621, IRF622, IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 , TO-220AB IRF622 IRF623 TO-220AB IRF623 G S NOTE: When ordering, use the entire , . Copyright © Harris Corporation 1997 5-1 File Number 1577.2 IRF620, IRF621, IRF622, IRF623 , 200 200 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 IRF623 150 150 4.0 2.5 16 ±20 40 0.32 , PARAMETER MIN TYP IRF620, IRF622 200 - - V IRF621, IRF623 150 - - V


Original
PDF IRF620, IRF621, IRF622, IRF623 IRF620 IRF621 IRF620 HARRIS TB334 IFR622 IRF623 harris TA9600 IRF623 IRF622 IFR623
IRF620

Abstract: IRF621 YT37 IRF622 IRF623
Text: Power MOSFETs _ IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect , ENHANCEMENT MODE TERMINAL DIAGRAM The IRF620, IRF621, IRF622 and IRF623 are n-channel enhancement-mode , Dp37-// _ Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 Electrical Characteristics @Tc = , €¢ Source Breakdown Voltage IRF620 IRF622 200 - - V VQS ■OV lD = 250/iA IRF621 IRF623 ISO - - V , max ' VGS " 10V IRF622 IRF623 4.0 - - A ^DS(on) Static Drain Source On-State Resistance Â


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PDF IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF620 IRF621 YT37
IRP623

Abstract: IRP621 IRF620 IRF620 application IRF621 IRF622 IRF623 TC 3162
Text: -Standard Power MOSFETs File Number 1577 IRF620, IRF621, IRF622, IRF623 Power MOS , ENHANCEMENT MODE GO- TERMINAL DIAGRAM The IRF620, IRF621, IRF622 and IRF623 are n-channel enhancement-mode , JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF620 IRF621 IRF622 IRF623 Units Vqs Drain Source , . Standard Power MOSFETs - IRF620, IRF621, IRF622, IRF623 Electrical Characteristics @Tc = 25°C (Unless , Voltage IRF620 IRF622 200 V «GS ■°v IRF62Ì IRF623 150 V ld - 250iiA VGS)|h) Gale Threshold


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PDF IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF623 IRP623 IRP621 IRF620 IRF620 application IRF621 TC 3162
Not Available

Abstract: No abstract text available
Text: 200V 1.2Í1 4.0A IRF623 150V 1.2 0 4.0A MAXIMUM RATINGS IRF621 IRF622 IRF623 Unit 200 150 200 150 Vdc 200 150 200 150 Vdc Symbol IRF620 , IRF622 IRF623 B V d ss Drain-Source Breakdown Voltage IRF620 IRF621 150 - - V , IRF621 5 0 - - A IRF622 IRF623 4.0 - - A - 0.4 0.8 n IRF622 IRF623 - 0.8 1.2 o Qfs Forward Transconductance (2) 1.3 2.8 — u Ciss


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PDF 7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623
Not Available

Abstract: No abstract text available
Text: w vys S IRF620, IRF621, IRF622, IRF623 S em icon du cto r y y 4.0A and 5.0A, 150V , TO -220AB IRF620 IRF621 TO -220AB IRF621 IRF622 TO -220AB IRF622 IRF623 TO-22QAB IRF623 ÓS NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB SOURCE , , IRF623 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF620 IRF621 IRF622 IRF623 UNITS 200 150 200 150 V ■■V DGR 200 150 200 150


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PDF IRF620, IRF621, IRF622, IRF623 RF622,
IRF620

Abstract: No abstract text available
Text: , IRF623 Devices I HE D 4Ö5SM55 QGQâ4fll 1 I ■INTERNATIONAL RECTI FI ER T , V IRF621 IRF623 BV q SS 150 - - V Test Conditions . V G S = OV 1 = 250pA q , . Rating x 0 .8 , V q s = OV, T q = 1 2 5 °C IRF620 IRF621 5 .0 - - IRF622 IRF623 4 .0 - IRF620 IRF621 - 0 .5 0 .8 Q IR F622 IRF623 - 0 .8 1.2 Û to(on , 5 5 aaOflMfl^ a I ■IRF620, IRF621, IRF622, IRF623 Devices INTERNATIONAL R E C T I F I E


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PDF IRF620 IRF621 O-220AB C-233 IRF620, IRF621, IRF622, IRF623 T-39-11 C-234 IRF620
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 , IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 , MTP5N35 SAMSUNG Direct Re placement IRF822 IRF623 IRF623 IRF622 IRF620 IRF721 IRF720 SSP4N55 SSP4N60 IRF510 IRF510 IRF623 IRF623 IRF833 IRF832 IRF833 IRF523 IRF620 IRF620 IRF731 MOTOROLA MTP5N40 MTP7N12


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
irf621

Abstract: irf620
Text: IRF621 IRF622 IRF623 V ds 200V 150V 200V 150V RoS(on) 0 .8 0 0 o .s o o 1 2n 1.2Í1 Id 5.0A 5.0A 4.0A 4.0A , 150 ) I I ±20 IRF622 I IRF623 150 150 Unit Vdc Vdc Vdc Ade Ade Ade Ade mJ A Watts W , Characteristic Drain-Source Breakdown Voltage IR F620 IRF621 IRF622 IRF623 VGS(th) Ig s s Ig s s N-CHANNEL , On-State Drain-Source Current (2) IRF620 IRF621 IRF622 IRF623 Static Drain-Source On-State Resistance (2) IR F620 IRF621 IRF622 IRF623 - - 4.0 100 -1 0 0 250 1000 V d s = V g s . Id = 250^A V g s


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PDF IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623
irf 30A

Abstract: irf 80 n TO-202AA VNP002A IRF840 IRF820 IRF740 IRF450 IRF440 mospower
Text: 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 , Siliconix IRF220 ■IRF221 ■IRF222 ■IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 irf 30A irf 80 n TO-202AA VNP002A IRF740 mospower
IRF 50A

Abstract: IRF642 IRF641 IRF640 IRF633 IRF632 IRF631 IRF630 IRF622 IRF620
Text: 40 IRF623 120 0.18 14.0 75 -VN1200D 120 0.25 12.0 75 VN1201D 120 6.0 1.4 20 VN120ÖD 100 , ■IRF623 200V N-Channel Enhancement Mode MOSPOWER Siliconix Advanced Information These power , IRF620 200V 0.8Q 5.OA IRF621 150 V TO-220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF 50A IRF642 IRF641 IRF640 IRF633 IRF632 IRF631 IRF630 IRF622 IRF620
IRF622

Abstract: IRF623 IRF622 ge Ge 2sa IDM-16
Text: paralleling maximum ratings (Tc = 25° C) (unless otherwise specified) RATING SYMBOL IRF622 IRF623 UNITS , Breakdown Voltage IRF622 (VGS = OV, lD = 250 (JA) IRF623 BVdsS 200 150 — — Volts Zero Gate Voltage


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PDF IRF622 00A///sec, IRF623 IRF622 ge Ge 2sa IDM-16
IRF 50A

Abstract: VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420
Text: – IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel Enhancement Mode MOSPOWER Siliconix , IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) Drain-Source Voltage


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PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 IRF 50A VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420
IRF 850

Abstract: IRf 92 0151 623 13a 8Q DIODE irf640 IRF840 IRF820 IRF740 IRF450 IRF440
Text: !) IRF220 ■IRF221 ■IRF222 ■IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 IRF 850 IRf 92 0151 623 13a 8Q DIODE irf640 IRF740
CA111

Abstract: MTP7N20 MTP7N18 IRF722 IRF721 IRF720 IRF623 IRF622 IRF621 IRF620
Text: - 5. il £ s £ |E|gls|e|g|g|g|e|g|s|s|e|g|s|EÌB|g|g l<* IRF620 IRF621 IRF622 IRF623 MTP7N18


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PDF DU37114 T-39-Ã IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 CA111 IRF722
irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 HPWR-6502 2SK133 IRF331 PM100RLA060 IRF351 irf 111
Text: ■IRF221 ■IRF222 ■IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf 150 equivalent 2sk135 equivalent hitachi 2sk135 irf150 2SK133 IRF331 PM100RLA060 IRF351 irf 111
MTP8N10

Abstract: MTP25N10 MTP20N10 mtp7n06 MTP7N15 MTP5N06 irf510 MTP5N15 MTP12N10 MTPSP10
Text: POWER TRANSISTORS — TMOS PLASTIC (continued) Plastic TMOS Power MOSFETS — TO-220AB (continued) CASE 221A-02 VBR(DSS) (Volts) Min rDS(on) <® 'D (Ohms) (Amp) Max Device 'D(Cont) (Amp) Max PO (" Tc: = 25°C (Watts) Max 150 2.4 1.25 IRF613 2 20 1.5 IRF611 2.5 1.3 1.5 MTP3N15 3 50 1.2 2.5 IRF623 4 40 0.9 MTP5N15 5 50 0.8 IRF621 4 40 0.7 3.5 MTP7N15 7 75 0.6 5 IRF633 8 0.5 4 MTP8N15 0.4 5 IRF631 9 0.3 MTP10N15 10 0.25 7.5 MTP15N15 15 100 0.22 10 IRF643 16 125


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PDF O-220AB 21A-02 IRF613 IRF611 MTP3N15 IRF623 MTP5N15 IRF621 MTP7N15 IRF633 MTP8N10 MTP25N10 MTP20N10 mtp7n06 MTP5N06 irf510 MTP12N10 MTPSP10
1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
Text: - THOMSON/ DISTRIBUTOR SflE D ■=¡021,073 000570b ¿IE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel (Continued) Maximum Ratings Package bvdss ■ds rDS(ON) (v) (a) ohms TO-204 TO-205 TO-220 TO-247 4-Pin DIP 150 4 1.20 irf223 irf623 4.50 0.60 irff233 5 0.80 irf221 irf621 5.5 0.40 irff231 8 0.60 irf233 irf633 9 0.40 irf231 irf631 16 0.22 irf243 irf643 18 0.18 irf241 irf641 25 0.12 irf253 irfp253 30 0.085 irf251 irfp251 200 0.25 7.50 IRFD2Z2


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PDF 000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
IRF620

Abstract: 7n20 TI74 IRF220 IRF620-623 MTP7N20 IRF222 IRF622 IRF623 MTP7N18
Text: €¢ Low Drive Requirements • Ease of Paralleling TO-220AB IRF620 IRF621 IRF622 IRF623 MTP7N18 , IRF622 200 V 1.2 fi 4.0 A 2.5 A IRF623 150 V 1.2 Í2 4.0 A 2.5 A MTP7N18 180 V 0.7 Sì 7.0 A 4.5 A


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PDF IRF220-223/IRF620-623 MTP7N18/7N20 O-220AB IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 PC10230F IRF620 7n20 TI74 IRF220 IRF620-623 MTP7N20 IRF222 IRF622 IRF623 MTP7N18
IRF615

Abstract: No abstract text available
Text: POWER MOSFETs TO-220 NCHANNEL BVdss(V) 150.00 (Continued) RDS(onXQ) 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 3.00 2.00 1.50 1.10 0.68 0.45 0.34 0.28 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 Part Number IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRL641 IRF643 IRF641 IRL610 IRF612 IRF610 IRL620 IRF622 IRF620 IRL630 IRF632 IRF630 IRL640 IRF642 IRF640 IRF615 IRF614


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PDF O-220 IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRF615
2SK176

Abstract: VN4001A IRF441 IRF340 IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133
Text: – IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel Enhancement Mode MOSPOWER Siliconix , IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) Drain-Source Voltage


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2SK176 IRF223 2SK133
1rf520

Abstract: 1RF540 1RF620 1RF640 IRF542 IRF541 IRF533 IRF532 IRF530 1RF630
Text: 2.0 4.0 0.25 1. 2 10 2.5 4.0 10 1.3 2. 5 600 300 80 25 T0-220AB IRF623 IR N 150 ±20 4 40 ±500  , 0.8 5 TO-220 1RF622 SAMSUNG N 200 1. 2 4 TO-220 IRF623 SAMSUNG N 1501


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PDF 1RF522 O-220AB RF523 IRF530 O-220 1RF620 1rf520 1RF540 1RF640 IRF542 IRF541 IRF533 IRF532 1RF630
1rf634

Abstract: IRFZ25 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
Text: IO R INTERNATIONAL RECTIFIER PLASTIC PACKAGE HEXFETs 5bE D 4 Ô SS 4S E O G I D S S S 3 '- INTERNATIONAL RECTIFIER TO-220 Package N-CHANNEL Types Vos R d SIQN) (max) V IRFZ44 IRFZ45 IRFZ34 IRFZ35 IRFZ24 IRFZ25 IRFZ14 IRFZ15 IRF541 IRF543 IRF531 IRF533 IRF521 IRF523 IRF511 IRF513 IRF540 IRF542 IRF530 IRF532 IRF520 IRF522 IRF510 IRF512 IRF641 IRF643 IRF631 IRF633 IRF621 IRF623 IR F 6 1 1 IRF613 IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 IRF610 IRF612 IRF644 IRF645 1RF634 IRF635 IRF624 IRF625 IRF614 IRF615


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PDF O-220 IRFZ44 IRFZ45 IRFZ34 IRFZ35 IRFZ24 IRFZ25 IRFZ14 IRFZ15 IRF541 1rf634 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: IRF621FI IRF621P IRF622 IRF622FI IRF622P IRF623 IRF623FI IRF623P IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 , IRF621FI IRF622 IRF622FI IRF622FI IRF623 IRF623FI IRF623FI SGSP367 SGSP367 SGSP367 SGSP367 SGSP477 SGSP477


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
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