2SK357 Search Results

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

2sk3570

Abstract: 2SK3570-ZK D16256EJ2V0DS00 2SK3570-S 2SK3570-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE

marking xl

Abstract: 2SK3577 D1593
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3577 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3577 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent

2SK3574

Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

68NC

Abstract: 2SK3573 transistor 42A
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3573 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 68nC TYP. VDD = 16 V, VGS = 10 V, ID = 83 A Built-in gate protection diode

2SK3570

Abstract: 930 diode smd
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode

2SK3575

Abstract: 2SK3575-S 2SK3575-Z 2SK3575-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3575 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3575 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

2SK3574-ZK

Abstract: 2SK3574 2SK3574-S 2SK3574-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

2SK3579-01MR

Contextual Info: 2SK3579-01MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Outline Drawings TO-220F Applications Switching regulators UPS Uninterruptible Power Supply

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

2 input and gate 24v

Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode

2SK3574

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. VDD = 24 V, VGS = 10 V, ID = 48 A Built-in gate protection diode

2SK3572

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3572 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 32 nC TYP. VDD = 16 V, VGS = 10 V, ID = 80 A Built-in gate protection diode +0.2

2SK3575

Abstract: 2SK3575-S 2SK3575-Z 2SK3575-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3575 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3575 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current

marking XK

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3576 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent

2SK3576

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3576 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent

MARKING XL

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3577 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3577 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent

2SK3573

Abstract: 2SK3573-S 2SK3573-Z 2SK3573-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,

2SK3572-Z

Abstract: ISS 99 diode 2SK3572 D1625 2SK3572-S 2SK3572-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,

2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132

2SK357

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS 2SK357 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENOID DRIVE APPLICATIONS. 03.6±O.2 F EATURES : . L o w Drai n - S o u r ce ON Resistance

2SK3571

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3571 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 21 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode +0.2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and