MG400H1 Search Results

MG400H1FK1

Abstract: LF400A
Contextual Info: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage

MG400H1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage

MG400H1US1

Abstract: LF400A LF400
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG400H1US1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A PPLICATIONS. . High Input Impedance . High Speed : tf = 1. Ofis Max. trr=0.5ys(Max.) . Low Saturation Voltage: V q e (sat)= 5 .OV(Max.) . Enhancement-Mode

MG400H1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage

ica 700 Y

Abstract: transistor 16299
Contextual Info: TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA TO SH IBA TD DISCRETE/OPTO 1)1 ^ 0^7550 OOlbETt 3 DT-3 3 - 3 5 90D 16296 SEMICONDUCTOR TOSHIBA GTR MODULE TECHNICAL DATA MG400H1F L 1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG400H1FL1

Abstract: transistor CD 910 ga3n
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1FL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 . . . . The Collector Is Isolated from Case. With Built-in Free Wheeling Diode High DC Current Gain : hyE=80 Min. (Ic =400A)

MG400H1US1

Abstract: igbt toshiba mg ic 1200 p 60
Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA GTR MODULE MG400H1US1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. g B MAXIMUM RATINGS (Ta= 25°C) SYMBOL CHARACTER IST IC UNIT RATING C O i 1ret n r-Eni i11 C T Vo 11 ag i’ VCES 500 V G a1 e - Em it ter V o 11a g e

MG400H1US1

Abstract: LF400A
Contextual Info: GTR MODULE_ SILICON N CHANNEL IGBT MG400H1US1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.0ys Max. trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case.

Contextual Info: TOSHIBA { D ISC RE TE /O PT O} 9097250 TOSHIBA • ^ SOTTESO -ODlbEÌS fa | DISCRETE/OPTO 90D SEMICONDUCTOR 16292 D*T-33-35 TOSHIBA GTR MODULE MG400H1FK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG400H1FK1

Abstract: BX 330 transistor
Contextual Info: T O S HIBA {DISCRETE/OPTO} 9097250 TOSHIBA "Tü D Ë ] i m 7 a S D <DISCRETE/OPTO> 90D 16292 -DDlbE^a D T - 33-35 TOSHIBA GTR MODULE SEMICONDUCTOR MG400H1FK1 i SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

30U6P42

Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
Contextual Info: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

MG400G1UL1

Abstract: MG400H1FL1 mg400h1ul1 MG300M1FK1 mg400h1fk1 MG300G1UL1 ku 602 vc MG200M1UK1 MG200Q1UK1 MG300H1UL1
Contextual Info: — 214 — N F S , > t > » « . V - 'l 1f lñ * UK-2 U L _j 0 c 1 1 1 K ïW O BX OE c BX C 1 * & V CBO S V CE X (SUS) V bbo M 1c g fe I CP (T . i B I p (la s ) (V ) (V ) (V ) (A ) (A ) (A ) (A ) I FU Pc (In s ) (a i) (A ) (W ) = 2 5 °C ) T , T , v , 10

H-17

Abstract: H-18 H-19
Contextual Info: — 210 — l- 7 > ÿ 7 ? - iÿ i- A y 'in / N 'f t t 'ii/ ¡ GB T ÎÎ 2. AC, S £ V CE3 VoES c CP [F (Ins) (V ) (V ) (A ) (A ) (A ) I FU Pe (lis ) (a i) (A ) (W ) T , T . t, V il0 ( & 2) (°C ) (°C) (V ) I GE S ( n A) ft * ! CBS VcE (V) (mA) ft * VcBS

MG400H1FL1

Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
Contextual Info: 3.1 GTR Module Ratings The main maximum rating items include the emitter, base and collector currents of tran­ sistors, voltage between terminals, power dissi­ pation, junction temperature, storage tempera­ ture, etc. These characteristics are all closely

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入