MG400 Search Results

MG400 TOSHIBA

Contextual Info: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MG400H1FK1

Abstract: LF400A
Contextual Info: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage

MG400H1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage

Contextual Info: TOSHIBA MG400J1US51 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT M G 4 0 0 J 1 US51 HIGH P O W ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • H ig h In p u t Impedance • Includes a Complete H a lf B ridge in One

MG400H1US1

Abstract: LF400A LF400
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG400H1US1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A PPLICATIONS. . High Input Impedance . High Speed : tf = 1. Ofis Max. trr=0.5ys(Max.) . Low Saturation Voltage: V q e (sat)= 5 .OV(Max.) . Enhancement-Mode

Contextual Info: T O SH IB A MG400J2YS50 MG400J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in

Contextual Info: T O S H IB A MG400Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG400Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf= 0 .5 «s (Max. trr=0.5^s (Max.) Low Saturation Voltage : V e E ( s a t ) = 4 . 0 V

MG400V2YS60A

Contextual Info: MG400V2YS60A MITSUBISHI IGBT Module MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2

MG400Q2YS60A

Contextual Info: MG400Q2YS60A MITSUBISHI IGBT Module MG400Q2YS60A High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. short circuit and over temperature • The electrodes are isolated from case.

MG400Q1US1

Abstract: MG400Q1US11 MG400Q1US2 mg400q1us1-1
Contextual Info: T O SH IB A SEMICONDUCTOR TOSHIBA GTR MODULE MG400Q1US1/MG400Q1US2 TECHNICAL DATA SILICON N CHANNEL IGBT H IG H P O WE R S W I T C H I N G A P P L I C A T I O N S . M O T O R C O N T RO L A P P L I C A T I O N S . . High Input Impedance . High Speed : tf=0.5ys Max.

MG400J1US41

Abstract: MG400J1US42 VTV-300
Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR TO SH IB A TECHNICAL MG400J 1 U S 4 1 / M G 4 0 0 J 1 US42 DATA SILICON N CHANNEL IGBT M G400J1U S41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H igh In p u t Im pedance • H igh Speed : tf= 0.35/vs (Max.)

MG400V2YS60A

Contextual Info: TO SH IBA MG400V2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG400V2 Y S 6 0 A HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT

Contextual Info: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA

MG400Q2YS60A

Contextual Info: MG400Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. short circuit and over temperature

MG400J2YS61A

Abstract: tc 2608 IC tc 2608
Contextual Info: MG400J2YS61A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 400 Amperes/600 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA

Contextual Info: MG400Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive Load l Low saturation voltage : VCE (sat) =3.6V (Max.)

Contextual Info: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA

IEGT

Abstract: TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275
Contextual Info: MG400FXF2YS53 TOSHIBA GTR Module Silicon N-Channel IEGT MG400FXF2YS53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit E1 C2 E1 C2 G1 G2 IEGT 2

mg400j1us1

Abstract: 47N IGBT LF400A LF400
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG400J1US1 HI GH P OWER SW I T C H I N G A PP L IC ATIONS. riOTOR C O N T R O L AP PL IC ATIONS. . High Input Impedance . High Speed : tf=0.35ys Max. trr=0. 25fJs(Max.) . Low Saturation Voltage : VCE(sat)=4.0V(Hax.) . Enhancement-Mode

MG400G1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400G1UL1 HIGH PO WE R S W I T C H I N G A P PL ICA TI ON S. M O TO R CO NT ROL APPLICA TI ON S. Unit in mm . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain : hFE= -1-00 Min. (Ic=400A)

MG400H1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage

Contextual Info: TO SH IBA MG400Q1US41 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT M G400 1 US41 Unit in mm HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C ONTRO L APPLICATIONS. • • High Input Impedance H igh sp eed : tf=0.5,«s Max. trr = 0.5//s (Max.) Low Saturation Voltage : V c E (s a t) = 4.0V

DIODE OA-200

Abstract: MG400Q1US51
Contextual Info: T O S H IB A MG400Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 4 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)

MG400Q1US51

Abstract: PC3000
Contextual Info: MG400Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive Load Low saturation voltage : VCE (sat) =3.6V (Max.) Enhancement-mode