2SB56 Search Results

2SB566

Abstract: 2SB566A
Contextual Info: JMnic Product Specification 2SB566 2SB566A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD476/476A APPLICATIONS ・For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter

2SD476

Abstract: 2SD476A
Contextual Info: SavantIC Semiconductor Product Specification 2SD476 2SD476A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB566/566A APPLICATIONS ·For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION

2SB566

Abstract: 2SB566A
Contextual Info: SavantIC Semiconductor Product Specification 2SB566 2SB566A Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD476/476A APPLICATIONS ·For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION

2SD297

Abstract: 2SB563
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB563 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -3A ·Complement to Type 2SD297

2sb565

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB565 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -1.0(V)(Max)@IC= -2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min) APPLICATIONS ·Designed for low frequency power amplifier and power

Contextual Info: 2SB566 K , 2SB566A(K) Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 3. Emitter 2 „ J Absolute Maximum Ratings (Ta = 25°C)

2SB561

Abstract: 2SB561C transistor 2sb561
Contextual Info: 2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Power Amplifier G H Emitter Collector Base J A CLASSIFICATION OF hFE

Contextual Info: 2SB566 K , 2SB566A(K) Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline T0-220AB 2 2. Collector (Flange) 3. Emitter „ J Absolute Maximum Ratings (Ta = 25°C)

2sD476

Abstract: Hitachi DSA001650
Contextual Info: 2SB566 K , 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C)

2SB564

Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SB561

Abstract: Hitachi DSA0076 2SD467
Contextual Info: 2SB561 Silicon PNP Epitaxial ADE-208-1023 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item

2SB562

Abstract: 2SD468 ADE-208-1024 Hitachi DSA0076
Contextual Info: 2SB562 Silicon PNP Epitaxial ADE-208-1024 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2sb562

Abstract: Hitachi DSA002754
Contextual Info: 2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline 2SB562 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage

D476A

Abstract: 2SK47 2SD476 2SB566 2SB566A 2SD476A 2SK476 2SK476A
Contextual Info: HITACHI 2SD476 , 2SD476A® SILICON NPN TRIPLE DIFFUSED POWER SW ITCHING CO M PLEM ENTARY PAIR WITH 2SB566 g}and 2SB56SA(g 1, UjSC 2, Colléciof (|i y. Emitter 1.27. 3 -Onw* (I)IIIKIIMOIIÍ in n ifi I) {JEDEC TQ -220AB) I AB S O LU TE M AXIM UM RATINGS (Ta=25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SB562 TO-92L TRANSISTOR（PNP） 1. EMITTER FEATURES Power dissipation PCM : 900 mW（Tamb=25℃） Collector current ICM : -1 A Collector-base voltage V BR CBO : -25

2SB560

Abstract: 2sd438 transistor 2SD438 2sb560 transistor transistor 2sd438 326H transistor 2sb560 2sd438 2sb560 2SD438 SANYO
Contextual Info: Ordering number: EN 326H 2SB560/2SD438 N 0.326H PNP/NPN Epitaxial Planar Silicon Transistors SANYO i Low-Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable

2sD476

Abstract: 2SD476A 2SB566 2SB566A DSA003644
Contextual Info: 2SD476 K , 2SD476A(K) Silicon NPN Triple Diffused ADE-208-898 (Z) 1st. Edition Sep. 2000 Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C)

2SD471

Abstract: 2SB564 BO9477
Contextual Info: 2SD471 SILICON TRANSISTORS TO-92 The 2SB564 PNP and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS ECB 30V Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 25V Emitter-Base Voltage

2SB560

Abstract: 2sb560 transistor transistor 2sb560
Contextual Info: 2SB560 TO-92MOD Transistor PNP TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 3. BASE 8.400 8.800 Features — — — 0.900 1.100 0.400 0.600 High reverse voltage Low saturation voltage Suitable universal AF power amplifier use 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB556

Contextual Info: H ITACHI 2SB566 K , 2SB566A K Silicon PNP Triple Diffused Low Frequency Power Amplifier Power Switching Complementary Pair with 2SD476 and 2SD476A® Absolute Maximum Ratings Ta = 25 °C 2SB 2SB Item Symbol 5 6 6 ® 566A ^ U n it Collector to base voltage

2SB564

Abstract: 2SD471
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SB564 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB564 is designed fo r use in driver and o u tp u t stages o f audio frequency am plifiers. FEATURES PACKAGE DIMENSIONS • High to ta l power dissipation:

2SD467

Abstract: 2SD467C 2SB561 2SD467BTZ-E 2SD467CTZ-E PRSS0003DA-A SC-43A 2SD467B
Contextual Info: 2SD467 Silicon NPN Epitaxial REJ03G0765-0200 Previous ADE-208-1134 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB561 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector

2SB564

Abstract: 2SB564, transistor
Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SB564

Abstract: 2SB564, transistor
Contextual Info: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.