2SK385 Search Results

Contextual Info: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj

Contextual Info: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

Contextual Info: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 • VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2SK3857MFV

Contextual Info: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

MARKING KD

Abstract: MA 7905 2SK3856
Contextual Info: 2SK3856 Ordering number : ENN7905B N-Channel Silicon MOSFET 2SK3856 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

2SK3857TV

Contextual Info: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range

2SK3857CT

Abstract: F 2.2K IDSS
Contextual Info: 2SK3857CT 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3857CT エレクトレットコンデンサマイクロフォン用 Unit: mm ・CSP パッケージのため小型マイクロフォンに最適 ・感度が高い ・減電圧特性に優れる

2sk3856

Abstract: 79053 2SK38 79051
Contextual Info: 2SK3856 注文コード No. N 7 9 0 5 2SK3856 N チャネル MOS 形シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。 ・電力利得が大きい。 ・帰還容量が小さい。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

2SK385

Contextual Info: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS 2SK385 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 20.5MAX. I FEATURES: . High Breakdown. Voltage : V(jjf>)Dsg=400V

20-THD

Abstract: 2SK3857MFV
Contextual Info: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2SK3857TK

Abstract: ecm circuit
Contextual Info: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3857TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range

Contextual Info: 2SK3856 Ordering number : ENN7905A N-Channel Silicon MOSFET 2SK3856 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

2SK3856

Abstract: D2006
Contextual Info: 2SK3856 注文コード No. N 7 9 0 5 B 三洋半導体データシート 半導体ニューズ No.N7905A とさしかえてください。 2SK3856 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。

2SK3857TK

Contextual Info: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100

k3850

Abstract: 2SK3850 k3850 2083b k385 ENN8193 TA1012 IT08303
Contextual Info: 2SK3850 Ordering number : ENN8193 N-Channel Silicon MOSFET 2SK3850 General-Purpose Switching Device Applications Features • • • Best suited for motor drive. Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

Contextual Info: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current

2SK3857TK

Contextual Info: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range

2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132

Contextual Info: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2sk3856

Abstract: 7905 marking kd
Contextual Info: 2SK3856 Ordering number : ENN7905 N-Channel Silicon MOSFET 2SK3856 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

a1276

Abstract: transistor a1276 2sk3852 K3852 ENA1276 A12765 yoshimura
Contextual Info: 2SK3852 Ordering number : ENA1276 Preliminary SANYO Semiconductors DATA SHEET 2SK3852 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

2SK3857TK

Contextual Info: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

2SK3857TK

Contextual Info: 2SK3857TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3857TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 1.2±0.05 0.32±0.05 ・0.395mm 厚薄型パッケージのため薄型マイクロフォンに最適