2SK1118
Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531
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2sk15292sk15302sk3572sk358+122sk5252sk5262sk5322sk3872sk5722sk5782sk11182sk1513to-3p2sk17232sk790p-channel fet to-220
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BFM 15A
Abstract: 2SK447 11ife nf- 4 - A3
Contextual Info: 2SK447 2SK447 o 5 y 9 >'p K S, f X fffl O i —2 h'7 "f O DC-DC3 > A — * ^ Ì S Ì / C ^ f g ^ 'o 7 : R d S (0 N ) = 0 .2 4 0 ') - * 'f ') > y y -< * - k è f*i« i x v> t -To x • -*- >,;\ > >> h U *;Étè (Ta = 25<>C) « § Y v 4 >•';- x | | i ±
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2sk4472-21f1b10/us/fr10/+4220ftbfm 15a11ifenf- 4 - a3
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2SK447
Abstract: Field Effect Transistor Silicon N Channel MOS
Contextual Info: 2SK447 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR 2Q5MAX. APPLICATIONS. 1 FEATURES: . Low Drain-Source ON Resistance
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mg15g1al3
Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673
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2sj1152sj1232sj1472sk357+162sk3582sk3852sk3862sk3872sk3882sk405mg15g1al3mg400h12sk11242sk7912sk525mp61012sk5312sk6742sk6732sk405 2sj115
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2sk1029
Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
Contextual Info: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1
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2sk5782sk4472sk5682sk1513+102sk1029mg15g1am12sk1333mg30d1zm1mg30d2ym1mg30g2ym1mp67022sk56mg15c4hm1mg50d2dm1
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078
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2SK477
Abstract: 2SK453 2SK625 2SJ123 2SK459 2SK470 2SK438 2SK441 2SK447 2SK437
Contextual Info: - 50 - ft f m £ tt £ * V * it k K V m * fé "Æ: » * (V) ^ xi 4M m i* X P d /P c h (A) » * (W) Ig s s (max) (A) Vos (V) ft S (min) (max) V d s (A) (A) (V) (Ta=25*C) tfe (min) (max) V d s (V) (V) (V) g (min) (S) Id (A) Vds (V) W 1d (A) 2SK437(H) fôT
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2sk4372sk43825x4392sk440+122sk44140mvmax2sk6252sk45610dbtyp2sk4572sk4772sk4532sj1232sk4592sk4702sk447
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603
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L510A
Abstract: 2SK447 MG15D4GM1 MG15D6EM1 MG15D4HM1 t39j 18Oi
Contextual Info: ¿/o ÌÌÌìIh 2 M M M SEMICONDUCTOR S K 4 4 7 G 1 5 D 4 G M 1 G 1 5 D 4 H M 1 G 1 5 D 6 E M 1 TECHNICAL DATA OUT LINE Unit in mm EQUIVALENT CIRCUIT co CNJ 1. OATE Z DRAIK HEAT 6IBK & SOURCE TOSHIBA CORPORATION GT1A2A - 396 - (250V/15A) 2 S K 4 4 7 - r ~ 3 9-<s> 7
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mg15d4gm1mg15d4hm1mg15d6em12sk447+4t-39-jl510at39j18oi
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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o220abo-126j2y transistort15j10+8mp4704mg100m2ck12sb834mp3103mg50j6es91mp3002mp45052sc497
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2SK44
Abstract: AA 16392
Contextual Info: TOSHIBA ÍD IS CR ET E/O PTOJ DE I TGTYESG GDlb3flfl fl TO 9097250 TOSHIBA DISCRETE/OPTO ¿/o ÌÌÌìIh 2 M M M SEMICONDUCTOR 90D 16388 DT-37-/3 S K 4 4 7 ' 3 9 - j? 7 G 1 5 D 4 G M 1 G 1 5 D 4 H M 1 (250V/15A) G 1 5 D 6 E M 1 TECHNICAL DAÎA OUT LINE Unit in mm
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dt-37-/350v/15a2sk447_2sk447+22sk44aa 16392
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015z10015z11015z12015z2+11015z3ta8172aftb 1226 bnta8859pmg75n2ys40t6961ata8242akta8644n7378pta83107628p
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MG30H1BL1
Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX
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00-600v-1400vgt8n101gt8q101+16gt25h101pmg25h1bs1gt25ji01gt50g102mg50h1bs1gt50j101mg30h1bl1s3885mg100h2zs1mg100g2ys1mg100n2ys1mp6502mg150j2ys1mp6101mg25q6es1mg15j6es1
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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bce0017es-167bce0017f2sk3566 equivalent+92sk3562 equivalent2sk3561 equivalent2sk3878 equivalent2sk3568 equivalent2sk3911 equivalent2sk941 equivalenttpc8118 equivalent replacementtpc81182sk3767 equivalent
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2SK2056
Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII
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2sj147o-220is2sj1832sj200+162sj2012sj224o-220fl/sm2sj2382sj2392sj2402sk20562sk16032sk17232sk1377transistor 2sk16032sk21462sk2351mosfet 2sk1357transistor 2sk12132sk2402
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2sk4110
Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3
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bce0017ds-167bce0017e2sk4110+92sk41062sk41112sk3561 equivalent2sk3797 equivalent2sk2996 equivalent2sk2843 equivalent2sk2961 equivalent2sk41122sk3799 equivalent
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2SK425
Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418
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IRF740 "direct replacement"
Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace
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irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120
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2SK2056
Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.
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2sk22352sk20572sk34622sk2837+162sk27412sk22312sk27422sk20772sk27462sk14872sk20562sk16032sk13772sk5372sk17232sk1213transistor 2sk16032sk1603 datasheet2sj2392sk2352
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2N4351 MOTOROLA
Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132
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2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378
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MG30G2CL3
Abstract: MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1
Contextual Info: 9097250 TOSHIBA DISCRETE/O PTO TOSHIBA {DISCRETE/OPTO} TO 9 0D 16488 D T- T Ë j | TOT VE h U UUJihMöö Jb p GTR Modules Bipolar Darlington n o te : W A STA G E DARLINGTON, CK):3-STAGE DARLINGTON $:UNDER DEVELOPMENT * :V c e x <s u s i #:UL RECOGNIZED
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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2SK1603
Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and
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