2SK1530 Search Results

2SK1530 Datasheets (16)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK1530	Toshiba	N-Channel MOSFET	Original	PDF	227.53KB	4
2SK1530	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK1530	Toshiba		Original	PDF	44.05KB	9
2SK1530	Toshiba	TRANS MOSFET N-CH 200V 12A 3(2-21F1B)	Original	PDF	238.59KB	4
2SK1530	Unknown	FET Data Book	Scan	PDF	105.25KB	2
2SK1530	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	62.59KB	1
2SK1530	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	63.92KB	1
2SK1530	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	58.42KB	1
2SK1530	Toshiba	Silicon N channel field effect transistor for high power amplifier applications	Scan	PDF	184.36KB	3
2SK1530O	Toshiba	2SK1530 - TRANSISTOR 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-21F1B, 3 PIN, FET General Purpose Power	Original	PDF	404.67KB	4
2SK1530-O	Toshiba	2SK1530 - TRANSISTOR 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET, 2-21F1B, 3 PIN, FET General Purpose Power	Original	PDF	404.67KB	4
2SK1530O	Toshiba	Silicon N-Channel FET	Scan	PDF	116.82KB	3
2SK1530-Y	Toshiba	2SK1530 - TRANSISTOR 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET, 2-21F1B, 3 PIN, FET General Purpose Power	Original	PDF	404.67KB	4
2SK1530Y	Toshiba	TRANS MOSFET N-CH 200V 12A 3(2-21F1B)	Original	PDF	238.59KB	4

2SK1530-Y(F)	Toshiba	2SK1530 - MOSFET N-CH 200V 12A TO-3PL	Original	PDF	404.67KB	4
2SK1530-YF	Toshiba	2SK1530 - Trans MOSFET N-CH 200V 12A 3-Pin(3+Tab) TO-3PL	Original	PDF	404.67KB	4

2SK1530 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2sk1529 2sk1530 2sk357 2sk358 +122sk525 2sk526 2sk532 2sk387 2sk572 2sk578 2sk1118 2sk1513 to-3p 2sk1723 2sk790 p-channel fet to-220	PDF
2SJ201 Abstract: 2SK1530 toshiba pb includes Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2sj201 2sk1530 2-21f1b toshiba pb includes	PDF
Contextual Info: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.)	OCR Scan	2sk1530 2sj201 2-21f1b o-220sm	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SJ201	OCR Scan	2sk1530 2sj201	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: TO S H IB A 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH PO W ER AM PLIFIER APPLICATION U n it in m m • H ig h B reak d o w n V o ltag e • H ig h F o rw a rd T ra n s fe r A d m ittan ce : \|Y fs\|= 5 .0 S T yp .	OCR Scan	2sk1530 2sj201	PDF
Toshiba 2SJ Abstract: toshiba marking code transistor 2SK1530 toshiba Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1530 2sj201 toshiba 2sj toshiba marking code transistor +12sk1530 toshiba	PDF
2sk1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2sj201 2sk1530 toshiba 2sj	PDF
2SK1530 Abstract: 2SJ201 toshiba pb includes Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1530 2sj201 toshiba pb includes	PDF
Contextual Info: 2SK1530O Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)	Original	2sk1530o	PDF
Contextual Info: 2SK1530Y Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)	Original	2sk1530y	PDF
Contextual Info: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode	OCR Scan	2sk1530 2sj201	PDF
Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	2sk1530 2sj201	PDF
Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2sj201 2sk1530 2-21f1b	PDF
2SK1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	2sk1530 2sj201 2-21f1b toshiba 2sj	PDF

Contextual Info: T O SH IB A 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 1 SILICON N CHANNEL MOS TYPE 5 3 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : V]3gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	2sk1530 2sj201	PDF
Contextual Info: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : \|Yfg\| = 5.0S Typ. Complementary to 2SK1530	OCR Scan	2sj201 20-5max --200v 2sk1530	PDF
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss 200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : \|Yfs \| 5.0S(TYP.) . Complementary to 2SJ201	OCR Scan	2sk1530 2sj201 tc-25	PDF
2Sj201 Abstract: 2SK1530 Contextual Info: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SK1530	OCR Scan	2sj201 -200v 2sk1530	PDF
Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)	Original	2sk1530 2sj201 2-21f1b toshiba 2sj	PDF
Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)	Original	2sj201 2sk1530 2-21f1b	PDF
Contextual Info: 2SK1530 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)	Original	2sk1530	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: 2SK1530 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : \|Yfs\| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。	Original	2sk1530 2sj201 2-21f1b 2002/95/ec	PDF
toshiba marking code transistor Abstract: 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2sj201 2sk1530 2-21f1b toshiba marking code transistor +32sj201 toshiba toshiba 2sj toshiba semiconductor reliability handbook	PDF
2SJ20 Abstract: 2SK1530 2SJ201 Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	2sk1530 2sj201 2-21f1b 2sj20 +1toshiba 2sj	PDF

2SK1530 Search Results

2SK1530 Datasheets (16)

2SK1530 Datasheets Context Search

2SK1118

2SJ201

2SK1530

2SK1530

Toshiba 2SJ

2sk1530

2SK1530

2SK1530

2Sj201

Toshiba 2SJ

2SK1530

toshiba marking code transistor

2SJ20