2SK1529 Search Results

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

TRANSISTOR bH-10

Abstract: marking BH-10 2SJ200 2SK1529 SC-65
Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529

Contextual Info: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。

2SK1529

Abstract: K1529 2SJ200
Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)

2SK1529

Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.

K1529

Abstract: 2SK1529 2SJ200 Toshiba 2SJ
Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)

2SJ200

Abstract: 2SK1529
Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)

c 111 transistor

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200

Contextual Info: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529

2SJ200

Abstract: 6C1B
Contextual Info: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) r . . Complementary to 2SK1529

2SK1529

Contextual Info: TO SHIBA 2SK1529 Field Effect Transistor Unit in m m 15.9 MAX Silicon N Channel MOS Type rc-MOS II # 3 .2 ±0.2 High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Adm ittance - "Yfs = 4.OS (Typ.)

Contextual Info: TOSHIBA 2SJ200 TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • 1 5 .9 M A X . High Breakdown Voltage : V j gg= —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.) Complementary to 2SK1529

k1529

Abstract: 2SJ200 2SK1529 SC-65
Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in mm : V j g g = 180V • H igh Forw ard Transfer Adm ittance : |Yfs|= 4.0S Typ.) • Com plem entary to 2SJ200

Contextual Info: TOSHIBA 2SK1529 SILICON N CHANNEL MOS TYPE High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. Complementary to 2SJ200 1 5 .9 M A X . 3.3MAX. . , 2.0 • • • INDUSTRIAL APPLICATIONS Unit in mm M A X IM U M RATINGS (Ta = 25°C)

k1529

Abstract: 2sk1529 2sj200 2SK1529 2SJ200
Contextual Info: 2SK1529 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1529 ○ 低周波電力増幅用 単位: mm z 高耐圧です。 : VDSS = 180 V z 高順方向伝達アドミタンスです。 : |Yfs| = 4.0 S 標準 z 2SJ200 とコンプリメンタリになります。

k1529

Abstract: 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b
Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)

k1529

Abstract: 2SJ200 2SK1529 SC-65
Contextual Info: TO SH IBA 2SK1529 SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION High Breakdown Voltage : V d SS = 180 V High Forward Transfer Admittance : |Yfs| = 4.0 S Typ. Complementary to 2SJ200 1 5.9 M A X . O X I 1" - . CO o +1 . o f

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1529 Field Effect Transistor Silicon N Channel MOSType ji-MOS II High Power Amplifier Application F e a tu re s • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Admittance - |Yfe I = 4.0S (Typ.)

TE85L PACKING TE85

Abstract: Reel Taping Specification JEDEC toshiba tape and reel 2SK851 toshiba packing naming 2SK405 equivalent 2SK1529 LT 5212 2sk1529/2sj200 equivalent 2SJ200 equivalent
Contextual Info: TO SHIBA Quick Reference I. Quick Reference Table for Taping 1. TO-92 Device PACKING TAPING TYPE NO. REEL TPE1 DIMENSIONAL OUTLINE d ir e c t io n of tape feed QTY. 2.000PCS/ REEL 1 2 .7 AMMO PACK 2. TPER1 D IR E C T IO N OF TAPE FEED TPE2 D IR E C T IO N OF

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK1500

Abstract: 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531 2SK1438
Contextual Info: - 108 - ft m % *± £ m & m £ A V* it ft K V, tt m * (V ft * ffi X P d/P c h £ * (W) I* (A) less (max) (A) Vg s (V) (Ta=25T) 1Ï m S Id s (min) (max) V d s (A) (A) (V) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s (S) (V) Id (A) 2SK1497

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3