2SJ20 Search Results

2SJ20 Datasheets (113)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ20	Unknown	FET Data Book	Scan	PDF	92.15KB	2
2SJ20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	90.68KB	1
2SJ20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.61KB	1
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF	273.02KB	5
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF	156.99KB	4
2SJ200	Toshiba		Original	PDF	44.05KB	9
2SJ200	Unknown	FET Data Book	Scan	PDF	108.17KB	2
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	113.15KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	58.42KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	62.59KB	1
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	63.92KB	1
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF	182.41KB	3

2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF	164.74KB	3
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF	291.66KB	5
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF	291.66KB	5
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF	182.41KB	3
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF	291.66KB	5

2SJ20 Price and Stock

Filter by Manufacturer

Renesas Electronics Corporation


Renesas Electronics Corporation 2SJ205-T1-AZ Trans MOSFET P-CH 16V 0.5A 4-Pin(3+Tab) Power Mini-Mold T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ205-T1-AZ		25,000		733	1 - 10 - 100 - 1000 $0.47 10000 $0.42	Buy Now
Rochester Electronics	2SJ205-T1-AZ		25,000		1	1 - 10 - 100 $0.46 1000 $0.38 10000 $0.34	Buy Now
Renesas Electronics Corporation 2SJ206-T1-AZ Trans MOSFET P-CH 30V 0.5A 4-Pin(3+Tab) SC-62 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ206-T1-AZ		23,500		855	1 - 10 - 100 - 1000 $0.40 10000 $0.36	Buy Now
Rochester Electronics	2SJ206-T1-AZ		23,500		1	1 - 10 - 100 $0.39 1000 $0.32 10000 $0.29	Buy Now
Renesas Electronics Corporation 2SJ203C-T1B-A 2SJ203C-T1B-A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ203C-T1B-A		9,000		1,303	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
Rochester Electronics	2SJ203C-T1B-A		9,000		1	1 - 10 - 100 $0.28 1000 $0.23 10000 $0.21	Buy Now
Renesas Electronics Corporation 2SJ207(AZ) Trans MOSFET P-CH 16V 1A 4-Pin(3+Tab) SC-62
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ207(AZ)		2,657		669	1 - 10 - 100 - 1000 $0.52 10000 $0.46	Buy Now
Renesas Electronics Corporation 2SJ202-T1-A Trans MOSFET P-CH 16V 0.1A 3-Pin SC-70 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ202-T1-A		330		25	1 - 10 - 100 $0.07 1000 $0.07 10000 $0.07	Buy Now

Find more 2SJ20 price and stock on Findchips.com

2SJ20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SJ201 Abstract: 2SJ20 Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	2sj201 2sk1530 ta-25 2-21f1b +2-10ma 2sj20	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2sk1529 2sk1530 2sk357 2sk358 +122sk525 2sk526 2sk532 2sk387 2sk572 2sk578 2sk1118 2sk1513 to-3p 2sk1723 2sk790 p-channel fet to-220	PDF
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	2sj200 2sk1529 sc-65 2-16c1b +2transistor bh-10 marking bh-10	PDF
marking H17 Abstract: SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17 Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.	Original	2sj209 ot-23 -10ma marking h17 +4smd transistor h17 mosfet vgs 5v vds 100v max6017 smd h17	PDF
2SJ201 Abstract: 2SK1530 toshiba pb includes Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2sj201 2sk1530 2-21f1b toshiba pb includes	PDF
Contextual Info: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	2sj200	PDF
7741B Abstract: 2SJ205 Contextual Info: DATA SHEET MO S FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING The 2SJ205, P-channel vertical type MOS FET, is a switching device PACKAG E DIMENSIONS U n it: mm which can be driven by 3 V power supply. As the MOS FET is driven by lo w voltage and does n o t require con	OCR Scan	2sj205 7741b	PDF
TC-2329A Abstract: F16V 2SJ207 IEI-1213 iei-1209 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con	OCR Scan	2sj207 tc-2329a f16v iei-1213 +1iei-1209	PDF
c 2328a Abstract: 2SJ206 T500 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device	OCR Scan	2sj206 c 2328a t500	PDF
Contextual Info: 2SJ200 東芝電界効果トランジスタシリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : \|Yfs\|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。	Original	2sj200 2sk1529	PDF
2SK1529 Abstract: K1529 2SJ200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1529 2sj200 k1529	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SJ201	OCR Scan	2sk1530 2sj201	PDF
2SK1529 Abstract: Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1529 2sj200 toshiba 2sj	PDF
Toshiba 2SJ Abstract: toshiba marking code transistor 2SK1530 toshiba Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1530 2sj201 toshiba 2sj toshiba marking code transistor +12sk1530 toshiba	PDF

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ209, P-channel vertical type MOS PET, is a switching device PACKAGE D IM E N S IO N S U n it : mm which can be driven directly by the output o f ICs having a 5 V power	OCR Scan	2sj209 b2sj209 vp15-00 ws60-q0	PDF
l1209 Contextual Info: DATA SHEET NEC / M O S FIELD EFFECT TRANSISTOF 2SJ205 P-CHANNEL MOS FET FOR SW ITCHING PACK AG E D IM E N S IO N S U n it: mm The 2SJ205, P-channel vertical type M OS FE T, is a switching device which can be driven by 3 V power supply. As the MOS FE T is driven by low voltage and does not require con	OCR Scan	2sj205 vp15-00 ws60-00 l1209	PDF
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1529 2sj200 k1529 sc-65 +2toshiba pb includes toshiba 2-16c1b	PDF
R621 Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR _ / 2SJ204 ELÈCTRON DEVICE / P-CHANNEL MOS FET FOR SW ITCHING The 2SJ204, P-channel v ertical ty p e M OS FE T, is a sw itch in g device P A C K A G E D IM E N S IO N S Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er	OCR Scan	2sj204 ws60-0q r621	PDF
2sk1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2sj201 2sk1530 toshiba 2sj	PDF
2SK1530 Abstract: 2SJ201 toshiba pb includes Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2sk1530 2sj201 toshiba pb includes	PDF
2SJ208 Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SJ208 Pチャネル MOS FET スイッチング用外形図（単位：mm） 2SJ208は，2.5 V駆動タイプのPチャネル縦形MOS FETです。本MOS FETは低電圧で駆動でき，かつドライブ電流を考慮する必	Original	2sj208 2sj2082 cycle50 d18277jj4v0ds004 +2tc-7744b d18277jj4v0ds	PDF
2SJ209 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ209, P-channel vertical type MOS F E T, is a switching device	OCR Scan	2sj209	PDF
Contextual Info: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode	OCR Scan	2sk1530 2sj201	PDF
Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	2sk1530 2sj201	PDF

2SJ20 Search Results

2SJ20 Datasheets (113)

2SJ20 Price and Stock

Renesas Electronics Corporation 2SJ205-T1-AZ

Renesas Electronics Corporation 2SJ206-T1-AZ

Renesas Electronics Corporation 2SJ203C-T1B-A

Renesas Electronics Corporation 2SJ207(AZ)

Renesas Electronics Corporation 2SJ202-T1-A

2SJ20 Datasheets Context Search

2SJ201

2SK1118

TRANSISTOR bH-10

marking H17

2SJ201

7741B

TC-2329A

c 2328a

2SK1529

2SK1530

2SK1529

Toshiba 2SJ

l1209

2SK1529

R621

2sk1530

2SK1530

2SJ208

2SJ209