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Daniels Manufacturing Corporation (DMC) K1529 Crimpers / Crimping Tools POSITIONER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	K1529		3			1 $111.89 10 $100.38 100 $96.16 1000 $96.16 10000 $96.16	Buy Now
PEI Genesis	K1529					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Lorlin Electronics LTD CK1529 Rotary Switches 2POL 6POS PCB BBM Gold Flash Contacts
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CK1529					1 $7.38 10 $7.38 100 $4.73 1000 $4.22 10000 $4.22	Get Quote
Powerbox AB PBUK1529B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	PBUK1529B		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK1529 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK1529		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Cooper Crouse-Hinds GASK1529
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	GASK1529		1			1 $16.14 10 $14.67 100 $12.16 1000 $11.18 10000 $11.18	Buy Now

K1529 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1529 Abstract: K1529 2SJ200 Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 K1529 2SJ200	PDF
K3496 Abstract: K3436 K3498 K3638 K3492 K2746 MK Socket MK Socket outlet K2977 K3431 Contextual Info: Part M Product Guide Part M Product Guide An introduction to Part M of the Building Regulations: Part USE OF BUILDINGS. It is estimated that 8.6 million people in the UK a assist with the facilities for people with disabilities, the Office of the Depu Building Regulations 2000 have issued Part M, which covers the ent	Original	MK166 K3496 K3436 K3498 K3638 K3492 K2746 MK Socket MK Socket outlet K2977 K3431	PDF
2SK1529 Abstract: Toshiba 2SJ Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 Toshiba 2SJ	PDF
Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)	Original	2SK1529 2SJ200 2-16C1B K1529	PDF
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b	PDF
K1529 Abstract: 2SK1529 2SJ200 Toshiba 2SJ Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ	PDF
K1529 Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200	PDF
K1529 Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ	PDF
k1529 Abstract: 2sk1529 2sj200 2SK1529 2SJ200 Contextual Info: K1529 東芝電界効果トランジスタシリコンNチャネルMOS形 K1529 ○ 低周波電力増幅用単位: mm z 高耐圧です。 : VDSS = 180 V z 高順方向伝達アドミタンスです。 : \|Yfs\| = 4.0 S 標準 z 2SJ200 とコンプリメンタリになります。	Original	2SK1529 2SJ200 K1529 SC-65SC 2-16C1B 2002/95/EC) k1529 2sk1529 2sj200 2SK1529 2SJ200	PDF
k1529 Abstract: 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b Contextual Info: K1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type K1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 k1529 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b	PDF