2SK457 Search Results

2SK45

Abstract: 2SK457 d0117 06904 Hitachi Scans-001
Contextual Info: _ m SIE D 2SK457- - 4 4 ^ 2 0 5 DD1177b 3ST M H I T 4 HITACHI/ OPTOELECTRONICS •P31-2.Í5"“ GaAs N-channel MES FET_ SH F CONV ERTER RF AM PLIFIER ■ OUTLINE DRAWING (F PA K ) ■ABSOLUTE MAXIMUM RA TIN G S (Ta = 25°C) Item * , Sym bol

Contextual Info: 2SK457- — GaAs N-channel MES FET_ SHF C O N V E R T E R RF A M P L IF IE R • O U T L IN E DRAW ING F P A K ■A B S O L U T E M A X IM U M R A T IN G S (Ta = 25°C) Item Drain to Source Voltage Symbol Vd s Gate to Source Voltage Vg S

2SK477

Abstract: 2SK453 2SK625 2SJ123 2SK459 2SK470 2SK438 2SK441 2SK447 2SK437
Contextual Info: - 50 - ft f m £ tt £ * V * it k K V m * fé "Æ: » * (V) ^ xi 4M m i* X P d /P c h (A) » * (W) Ig s s (max) (A) Vos (V) ft S (min) (max) V d s (A) (A) (V) (Ta=25*C) tfe (min) (max) V d s (V) (V) (V) g (min) (S) Id (A) Vds (V) W 1d (A) 2SK437(H) fôT

2SK653

Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Contextual Info: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s

2SK457

Abstract: Hitachi 2SJ
Contextual Info: SIE J> m 2 SJ i4 57 4 4 ^ 2 0 5 GDllVTb 3ST • H I T M HITACHI/ OPTOELECTRONICS GaAs N-channel MES FET_ SH F CONV ERTER RF A M PLIFIER P"'31~ ‘ ■ OUTLINE DRAWING -rm 1 10.0mm. <.0reir>. j *5 u» î 3t 4J-0, (max. 4 4.2 m *

2SK425

Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418

2SK1845

Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Contextual Info: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.

HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION

2SK668

Contextual Info: 2SK668 N-Channel GaAs Single Gat« MES F ET U H F/SH F Low N o i» Amplifier • OUTLINE DRAWING M P A K -4 MAXIMUM CHANNEL DISSIPATION CURVE ■ A BSO LU TE MAXIMUM RATIN G S (Ta = 25°C) Item Sym bol Drain to Source Voltage Ratings Unit VD S 6 V Vg s

Contextual Info: O C K 4 R 7 SIE D • MM^bSOS □□1177b BST ■ H I T M _ - _- _ — - HITACHI/ OPTOELECTRONICS GaAs N-channel MES F E T_