2SK410 Search Results

2SK4105

Abstract: K4105 2SK41 K-410
Contextual Info: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)

2SK4103

Abstract: 2SK41 MOSFET 500V 5A
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4103 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V

toshiba k4108

Abstract: k4108 2SK4108 toshiba 2sk4108 SC-65
Contextual Info: 2SK4108 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK4108 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 14 S (標準)

toshiba k4108

Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)

2SK4103

Abstract: K4103
Contextual Info: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage

K4103

Abstract: 2SK4103
Contextual Info: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage

2sk410

Abstract: Hitachi DSA00382
Contextual Info: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry

K4101

Abstract: equivalent transistor for K4101 2SK4101LS K4101 equivalents
Contextual Info: 2SK4101LS Ordering number : ENA0745 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

K4103

Abstract: 2SK4103 2SK4103,K4103
Contextual Info: 2SK4103 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK4103 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 5.2 ± 0. 2 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)

K4100

Abstract: 2SK4100ls 2sk4100 transistor k4100 mosfet k4100 K4100 DATASHEET DSA0028595
Contextual Info: 2SK4100LS Ordering number : ENA0778 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

2SK4105

Abstract: Power MOSFET, toshiba TO220-NIS
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4105 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V

Contextual Info: 2SK4101LS Ordering number : ENA0745A N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

toshiba k4108

Abstract: K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410
Contextual Info: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current

K4103

Abstract: 2SK4103 TOSHIBA 2SK4103 toshiba marking code transistor 2SK4103 equivalent marking code c 9 toshiba
Contextual Info: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

Contextual Info: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)

k4101

Abstract: 2SK4101LS equivalent transistor for K4101 2SK410 2SK4101 K4101 equivalents
Contextual Info: 2SK4101LS Ordering number : ENA0745A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

U 318 m

Contextual Info: 2SK410 SILICON N-CHANNEL MOS FET PACKAGE STYLE .500 6L FLG DESCRIPTION: A C 1 3 The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. 2x Ø N FU LL R D 2 B FEATURES: .725/18,42 F G • PG = 17 dB typ. at 100 W/28 MHz

k4107

Abstract: toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107
Contextual Info: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)

K4101

Abstract: 2SK4101LS 2SK4101 k4101 mosfet N0707 IT12223 IT12227
Contextual Info: 2SK4101LS 注文コード No. N A 0 7 4 5 B 三洋半導体データシート 半導体データシート No.NA0745A をさしかえてください。 2SK4101LS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

2SK4106

Abstract: TO220-NIS package
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4106 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V

2SK425

Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418

2SK425

Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
Contextual Info: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL

2SK4101

Abstract: K4101 K4101FS 2SK4101FS a1366 K410 N2608QB
Contextual Info: 2SK4101FS Ordering number : ENA1366A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101FS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee.

K4101

Abstract: A1365 2SK4101FG equivalent transistor for K4101 k-410 7529 K4101 equivalents N2608QB 2sk4101
Contextual Info: 2SK4101FG Ordering number : ENA1365 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101FG General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.