2SK417 Search Results

2SK4171

Abstract: 75070-02
Contextual Info: 2SK4171 Ordering number : ENA0787 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4171 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee.

2SK4178

Abstract: 2SK4178-ZK-E1-AY 2SK4178-ZK-E2-AY ETC 529 DIODE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4178 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

K4174

Abstract: 2SK4174 k417 SJG00045AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ

2SK4179

Abstract: 2SK4179GS k417
Contextual Info: 2SK4179GS Ordering number : ENA1498 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4179GS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications

K4171

Contextual Info: 2SK4171 注文コード No. N A 0 7 8 7 三洋半導体データシート N 2SK4171 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・ロード S / W 用等。 ・モータドライブ用等。

A1498

Abstract: 2SK4179GS K4179
Contextual Info: 2SK4179GS 注文コード No. N A 1 4 9 8 三洋半導体データシート N 2SK4179GS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗。 ・ モータドライブ用等。 ・ アバランシェ耐量保証。

Contextual Info: 2SK4171 Ordering number : ENA0787 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4171 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee.

A1269

Abstract: 2SK4179 k417
Contextual Info: 2SK4179 注文コード No. N A 1 2 6 9 三洋半導体データシート N 2SK4179 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・モータドライブ用等。 ・アバランシェ耐量保証。

Contextual Info: 2SK4171 Ordering number : ENA0787 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4171 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee.

2SK425

Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418

2SK425

Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
Contextual Info: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL

K4177

Contextual Info: 2SK4177 Ordering number : ENA0869 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4177 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

TO263-2L

Contextual Info: 2SK4177 Ordering number : ENA0869A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4177 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =10Ω(typ.) 10V drive • Input capacitance Ciss=380pF (typ.) Specifications

A1269

Abstract: 2SK4179 n-channel, 75v, 80a
Contextual Info: 2SK4179 Ordering number : ENA1269 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4179 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications

2SK4174

Abstract: K4174 k417 2SK41 216mJ
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ

Contextual Info: 2SK4177 Ordering number : ENA0869A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4177 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =10Ω(typ.) 10V drive • Input capacitance Ciss=380pF (typ.) Specifications

Contextual Info: 2SK4177 Ordering number : ENA0869 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4177 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

Contextual Info: Ordering number : ENA0869A 2SK4177 N-Channel Power MOSFET http://onsemi.com 1500V, 2A, 13Ω, TO-263-2L Features • • ON-resistance RDS on =10Ω(typ.) 10V drive • Input capacitance Ciss=380pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter

2SK4177

Contextual Info: 2SK4177 Ordering number : ENA0869 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4177 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and