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    K4174

    Abstract: 2SK4174 k417 SJG00045AED
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		2002/95/EC) 2SK4174 O-220D-A1 K4174 2SK4174 k417 SJG00045AED PDF

    2SK4174

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		2002/95/EC) 2SK4174 O-220D-A1 2SK4174 PDF

    2SK4174

    Abstract: K4174 k417 2SK41 216mJ
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		2002/95/EC) 2SK4174 O-220D-A1 2SK4174 K4174 k417 2SK41 216mJ PDF