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    Bourns Inc CR0603AJ/-000EAS

    Thick Film Resistors - SMD ZERO OHM JUMPER
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    TTI CR0603AJ/-000EAS Reel 25,000 5,000
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    Murata Manufacturing Co Ltd GCM31M5C1H473FA16L

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.047 uF 50 VDC 1% 1206 C0G (NP0) AEC-Q200
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    TTI GCM31M5C1H473FA16L Reel 3,000 3,000
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    Vishay Intertechnologies CRCW25122K70JNEG

    Thick Film Resistors - SMD 1watt 2.7Kohms 5%
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    TTI CRCW25122K70JNEG Reel 2,000
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    Amphenol Corporation D15P33E4GV00LF

    D-Sub Standard Connectors Right angle 15 way Pin
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    TTI D15P33E4GV00LF Tray 300
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    K4174 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4174

    Abstract: 2SK4174 k417 SJG00045AED
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs K4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		2002/95/ec2sk4174o-220d-a1k4174+2k417sjg00045aed PDF

    2SK4174

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs K4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		2002/95/ec2sk4174o-220d-a1 PDF

    2SK4174

    Abstract: K4174 k417 2SK41 216mJ
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs K4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		2002/95/ec2sk4174o-220d-a1k4174+3k4172sk41216mj PDF