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    2SJ183 Search Results

    2SJ183 Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SJ183
    		Toshiba Original PDF 44.05KB 9
    2SJ183
    		Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SJ183
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 44.98KB 1
    2SJ183
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 58.42KB 1
    2SJ18-3
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 80.61KB 1
    2SJ183
    		Unknown Scan PDF 118.9KB 2
    2SJ183
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 113.15KB 1
    2SJ183
    		Unknown FET Data Book Scan PDF 109.66KB 2
    2SJ183
    		Toshiba Silicon P-channel MOS FET Scan PDF 118.9KB 2
    2SJ1839
    		Sanyo Semiconductor TRANS MOSFET N-CH 30V 0.1A 3MCP Original PDF 85.15KB 3
    SF Impression Pixel

    2SJ183 Price and Stock

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    Panasonic Electronic Components ERG12SJ183

    ERG SERIES AXIAL THROUGH HOLE FIXED RESISTOR 18KOHMS +/-5% 0.5W +/-350PPM/DEGC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ERG12SJ183 Bulk 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05
    		Get Quote

    Panasonic Industry ERG2SJ183V

    Res Metal Oxide Film 18K Ohm 5% 2W ±350ppm/°C Conformal Coated AXL Tape and Box Automotive AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics ERG2SJ183V 3,000 1
    • 1 $0.38
    • 10 $0.38
    • 100 $0.19
    • 1000 $0.07
    • 10000 $0.06
    		Buy Now

    Panasonic Industry ERG-2SJ183A

    Res Metal Oxide Film 18K Ohm 5% 2W ±350ppm/°C Conformal Coated AXL Automotive AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics ERG-2SJ183A 3,000
    • 1 -
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    2SJ183 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		2sj147o-220is2sj1832sj200+162sj2012sj224o-220fl/sm2sj2382sj2392sj2402sk20562sk16032sk17232sk1377transistor 2sk16032sk21462sk2351mosfet 2sk1357transistor 2sk12132sk2402 PDF

    k2038

    Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
    Contextual Info: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)


    OCR Scan     		2sj1832sk1078o2sj2382sk1717+162sk17192sj239i02sj3152sj36o2sk22312sj377k2038k1357k 1357k1363k2077k1349k1356k1574k2039k2222 PDF

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan     		2sj1152sj1232sj1262sj147+162sj1832sj2002sj2012sj2242sj2382sj2392sk16032sk22362sk17232sk22222sk5382sk180s2sk5842sk18822sk15132sk1915 PDF

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


    Original     		2sj1012sj1022sj1032sj104+142sj1052sj1062sj1072sj1082sj1092sj1102sj1112sj1312sj1122sj1552sj124transistor 2sj1622sj1132sj122 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603 PDF

    MG150Q1JS44

    Abstract: 1S1885 diode MG150Q1JS
    Contextual Info: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.


    Original     		mg150q1js442-109c1a1s1885 diodemg150q1js PDF

    2SK1649

    Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941
    Contextual Info: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD


    OCR Scan     		2sk10782sk9402sk11122sj183+162sk11142sk13442sk17682sk11152sk13452sk9422sk16492sk5372sk13492sk13772sk5382sk7882sk15132sk17232sk8892sk941 PDF

    2SJ18

    Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172
    Contextual Info: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft t*È (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 * SW-Reg, DDC MOS


    OCR Scan     		2sj1702sj1712sj1722sj173+122sj174m-30v2sj191210nstyp2sj1922sj1932sj18ha 1350s2s11892s1192sj196mos-mcs PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		bce0017es-167bce0017f2sk3566 equivalent+92sk3562 equivalent2sk3561 equivalent2sk3878 equivalent2sk3568 equivalent2sk3911 equivalent2sk941 equivalenttpc8118 equivalent replacementtpc81182sk3767 equivalent PDF

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		bce0017a2sk16032sk3561 equivalentun 1044+72sj2382sk1603 datasheet2sk20392sk20302sk20562sk14872sk1078 PDF

    2SJ1334

    Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
    Contextual Info: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


    Original     		ha16142p/fpade-504-006do-35do-41+52sj13342sk3235hsk81hitachi dsautaz006ha16141 PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		bce0017ds-167bce0017e2sk4110+92sk41062sk41112sk3561 equivalent2sk3797 equivalent2sk2996 equivalent2sk2843 equivalent2sk2961 equivalent2sk41122sk3799 equivalent PDF

    2SJ183

    Abstract: D25A
    Contextual Info: FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSm INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. RELAY DRIVE,MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance : R DS(0N)=0.3Q (Typ.)


    OCR Scan     		2sj183d25a PDF

    2SK2056

    Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
    Contextual Info: [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List [ 9 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.


    Original     		2sk22352sk20572sk34622sk2837+162sk27412sk22312sk27422sk20772sk27462sk14872sk20562sk16032sk13772sk5372sk17232sk1213transistor 2sk16032sk1603 datasheet2sj2392sk2352 PDF

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		3515c-0202f-935612sk16032sk2056+82sk13772sk13492sk24022sk11172sk1213transistor 2sk16032sk4232sk1855 PDF

    2sK2750 equivalent

    Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
    Contextual Info: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21


    Original     		o-220sisbce0017a2sk2750 equivalentequivalent 2sk2698 mosfet+82sk16032sk2996 equivalent2sk3569 equivalent2sk20562sk3565 equivalentmosfet 2sk1358 transistor guide2sk3567 equivalent2sj238 PDF