2SJ18 Search Results

2SJ469

Contextual Info: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5

Contextual Info: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

Contextual Info: 2SJ186 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline

Hitachi 2SJ

Abstract: Hitachi DSA001651
Contextual Info: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SJ187

Abstract: 3509-1 35094 2062a 35092
Contextual Info: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

2SJ187

Contextual Info: 2SJ187 LD L o w D r iv e S e r ie s 2062 V dss = 30V P Channel Power M OSFET F eatu res •Low ON resistance ■Very high-speed switching ■Low-voltage drive A bsolute M axim um R atin g s a tT a = 25°C Drain to Source Voltage V d ss Gate to Source Voltage

transistor 2sk

Abstract: S10ms 2SJ184 2SK1398 T100 T200
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device

Contextual Info: Preliminary Datasheet 2SJ181 L , 2SJ181(S) R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 Silicon P Channel MOS FET Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

equivalent smd mosfet

Abstract: 2SJ181S
Contextual Info: MOSFET SMD Type P-Channel MOS FET For High-Speed Switching 2SJ181S TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 No secondary breakdown Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1

Contextual Info: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Hitachi 2SJ

Abstract: Hitachi DSA002756
Contextual Info: 2SJ186 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ186 Absolute Maximum Ratings Ta = 25°C

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline

2SJ181

Abstract: Hitachi DSA00347
Contextual Info: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline

fet e300

Abstract: 2SJ185 2SK1399 T100 T200 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING OUTLINE DIMENSIONS Unit mm 2.8 ± 0.2 1.5 3 l € 0.65i§:05 FEATURES - 3 The 2SJ185 is a P-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS F ET is driven by low voltage and does not require con­

2SJ184

Abstract: 2SK1398 ScansUX882
Contextual Info: MOS M O S Field Effect T ra n sisto r 2 S J 1 8 4 MOS FET 2SJ184ÜP FETfi»' , ^ -{ÎL 7 f > / •r ' < 4 X t L T ^ i i f ' t o ^ M O S F E T (i 4 .0 ± 0 .2 • mm [ 2 .5 V (V i& W kT M ihT è Ztzish, ^ -y K 7 * > • X r 1 / 7 ^ 6 0 ' t i t £ T f t tfi * f t K 'ft

Contextual Info: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SJ188

Contextual Info: Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2083B [2SJ188] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

S10ms

Abstract: 2SJ184 2SK1398 T100 T200 TC-7645A
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS U n it: mm 2.0 ± 0.2 4.0±0.2 o -H o 4 -0 .5 0 FEATURES Ft IO ö 0.45 w hich can be driven by 2.5 V power supply.

2SJ181

Abstract: Hitachi 2SJ Hitachi DSA00316
Contextual Info: 2SJ181 L , 2SJ181(S) Silicon P-Channel MOS FET ADE-208-1183 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SJ180

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device

2SJ186

Abstract: Hitachi 2SJ DSA003638
Contextual Info: 2SJ186 Silicon P-Channel MOS FET ADE-208-1184 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SJ189 • ♦ 2083A 2092A LD L o w D riv e S e rie s V DSs= 3 0 V P Channel Power M OSFET 3762A F e a tu re s •Low ON resistance • Very high-speed switching • Low-voltage drive A b so lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage

2SJ180

Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power OUTLINE DIMENSIONS U n it: mm source.

2SJ188

Abstract: 2092A
Contextual Info: 2SJ188 2083A LD L o w D rive Series V Dss = 3 0 V 2092A P Channel Power MOSFET 3761A F e a tu re s - Low ON resistance • Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage