2SJ108 Search Results

2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118

2SK370

Abstract: 2SJ108
Contextual Info: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2MAX — Amplifiers. • High |Yfs| x: < I fSI ro 1

Contextual Info: T O SH IB A 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. 4 .2 M A X . H igh |Yfs| : |Yfs| = 22mS Typ. (VDS= —10V, VGS = 0, IDSS= -3m A )

Transistor 2sj108

Abstract: 2SJ108 2SK370 Toshiba 2SJ
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

2SK370 TOSHIBA

Abstract: 2SJ108 Toshiba 2SJ
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

2SJ108

Abstract: 2SK370
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

2SJ108

Abstract: 2SK370 Toshiba 2SJ
Contextual Info: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)

2SJ108

Abstract: 2SK370
Contextual Info: 2SJ108 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. • High |Yfs| : |Yfs| = 22mS Typ. (VDS= -10V , VGS = 0, IDSS=-3m A )

Contextual Info: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Unit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2 VI A X . Amplifiers. • TTicrVi e >~ II V * lry Ji

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SK370

Abstract: 2SJ108
Contextual Info: T O S H IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SK370

Abstract: 2SJ108
Contextual Info: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)

2SC3378

Abstract: 2SK118 2SC245S 2sa137 2SA1048 2SA1049 2SA1150 2SC2458 2SC2469 2SC2710
Contextual Info: Powered —3 O n X by H 2. MINI PACKAGE SERIES CD ICminer.com > rH H H n 73 m Electronic-Library —3 m \ Application o "O '— 3 O General Purpose’* Low Noise High Voltage High Current Ji High Current O X m m o Low Impedance Low N< H Audio Drive & Out

2sk405 2sj115

Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
Contextual Info: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS

2sj111

Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
Contextual Info: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)

Contextual Info: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 7 Q FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm S u ita b le for U se as F ir s t S ta g e for E q u a liz e r a n d MC H e a d 4.2 VI A X . Amplifiers. TTiO“

2SC3378

Abstract: 25A1048
Contextual Info: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>

2SJ108

Abstract: 2SK370
Contextual Info: TO SH IBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ. (VDS = 10V, VGS = 0, IDSS = 3mA)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

2SJ108

Abstract: 2SK370
Contextual Info: TO SH IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)

2SJ108

Abstract: 2SK370 Toshiba 2SJ 2SK370 TOSHIBA
Contextual Info: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)