2SK362 Search Results

2sk3622

Abstract: TOSHIBA 2SK362 2SK362 2sk3624
Contextual Info: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK3559

Abstract: IDA-20
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

2SK3628

Contextual Info: Power MOSFETs 2SK3628 Silicon N-channel power MOSFET Unit: mm 15.0±0.3 0.7 For hihg-speed switching 21.0±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage VGSS

2SK3625

Abstract: K3625 K362
Contextual Info: 2SK3625 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3625 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm z Low drain−source ON resistance: RDS (ON) = 65 mΩ (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.)

Contextual Info: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK3628

Contextual Info: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3628 TO-263 1 .2 7 -0+ 0.1.1 Features High-speed switching Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

Contextual Info: Silicon MOSFET 2SK3628 N-channel enhancement mode MOSFET High speed switching 0.7 Rating Unit Drain-Source breakdown voltage VDSS 230 V Gate-Source voltage VGSS ±30 V Drain current DC ID 20 A Pulse IDP 80 A EAS 570 mJ Allowable power Tc = 25 °C *2 dissipation

Contextual Info: TOSHIBA 2SK362 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK362 Unit in mm FOR A U D IO AMPLIFIER, A N A L O G SW ITCH, CONSTANT CURRENT A N D .5.1 MAX. IM PEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : VGD g = —50V

2sk3622

Abstract: 2SK362
Contextual Info: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK362

Contextual Info: TOSHIBA 2SK362 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK362 FOR AUD IO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND Unit in mm IM PEDANCE CONVERTER APPLICATIONS 5.1 MAX. • High Breakdown Voltage : V Q D g = —50 V • High Input Impedance

2SK362

Contextual Info: TOSHIBA 2SK362 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK362 FOR AUDIO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND Unit in mm 5.1 MAX. IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : V j ß g = —50V • High Input Impedance

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

2SK362

Abstract: 2sk3624 2sk3622
Contextual Info: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3628 Silicon N-channel power MOSFET Unit: mm 15.0±0.3 (0.7) For hihg-speed switching 21.0±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage

2SK3628

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3628 Silicon N-channel power MOSFET Unit: mm 5.0±0.2 15.0±0.3 (0.7) For hihg-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage

2sk3665

Abstract: 2SK3559 2SK3628 2SK3652 2SK3637 2SK3665 equivalent input id
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

Contextual Info: TOSHIBA 2SK362 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 6 2 Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • 5.1 MAX. High Breakdown Voltage : V q d s = —50V High Input Impedance

2sj111 fet

Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
Contextual Info: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

Contextual Info: Siフォトダイオード 第 章 2 1 Siフォトダイオード 章 1-1 動作原理 1-2 等価回路 1-3 電流ー電圧特性 1-4 直線性 1-5 分光感度特性 1-6 ノイズ特性 1-7 感度均一性 1-8 応答速度 1-9 オペアンプとの接続