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2SK366 Datasheets (30)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK366	Toshiba	Field Effect Transistor Silicon N Channel Junction Type	Original	PDF	338.27KB	5
2SK366	Unknown		Scan	PDF	219.04KB	4
2SK366	Unknown	FET Data Book	Scan	PDF	99.86KB	2
2SK366	Toshiba	EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE	Scan	PDF	230.16KB	5
2SK366	Toshiba	Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications	Scan	PDF	230.16KB	5
2SK366	Toshiba	TO-92 Mini Package Transistors / Junction FETs	Scan	PDF	73.13KB	1
2SK3662	Toshiba	power MOSFET	Original	PDF	224.07KB	6
2SK3662	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3662(F)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A TO220NIS	Original	PDF		6
2SK3663	NEC	N-Channel enhancement MOS FET for load sw	Original	PDF	63.27KB	6
2SK3664	NEC	N-Channel enhancement MOS FET for load sw	Original	PDF	60.76KB	6
2SK3665	Panasonic	FET, N Channel, 1.5 VThreshold, ID 30 A	Original	PDF	132.84KB	16
2SK3666	Sanyo Semiconductor	Low-Frequency General-Purpose Amplifier, Impedance Converter Applications	Original	PDF	28.68KB	4
2SK3666-2-TB-E	On Semiconductor	2SK3666 - N-Channel JFET for Low Frequency General Purpose Amplifier and Impedance Conversion Applications, IDSS = 0.6-1.5 mA	Original	PDF	296.45KB	6

2SK3666-3-TB-E	On Semiconductor	2SK3666 - N-Channel JFET for Low Frequency General Purpose Amplifier and Impedance Conversion Applications, IDSS = 1.2-3.0 mA	Original	PDF	296.45KB	6
2SK3666-4-TB-E	On Semiconductor	2SK3666 - Junction FET 30V 10mA Nch single CP	Original	PDF	296.45KB	6
2SK3667	Toshiba	FETs - Nch 500V	Original	PDF	197.8KB	6
2SK3667	Toshiba	MOSFET 2SK/2SJ Series	Original	PDF	93.95KB	3
2SK3667	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3667(Q)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7.5A TO220SIS	Original	PDF		6

2SK366 Price and Stock

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Renesas Electronics Corporation 2SK3663-T1-A Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3663-T1-A		129,000		4,342	1 - 10 - 100 - 1000 - 10000 $0.08	Buy Now
Rochester Electronics	2SK3663-T1-A		129,000		1	1 - 10 - 100 $0.08 1000 $0.07 10000 $0.06	Buy Now
Renesas Electronics Corporation 2SK3668-ZK-E1-AY SWITCHING N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3668-ZK-E1-AY		20,800		97	1 - 10 - 100 $3.90 1000 $3.31 10000 $3.13	Buy Now
Rochester Electronics	2SK3668-ZK-E1-AY		20,800		1	1 - 10 - 100 $2.96 1000 $2.65 10000 $2.50	Buy Now
onsemi 2SK3666-3-TB-E - Tape and Reel (Alt: 2SK3666-3-TB-E)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK3666-3-TB-E	Tape & Reel			18,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
RS	2SK3666-3-TB-E	Bulk			50	1 - 10 - 100 $0.41 1000 $0.36 10000 $0.36	Get Quote
Quest Components	2SK3666-3-TB-E		936			1 $0.16 10 $0.16 100 $0.10 1000 $0.07 10000 $0.07	Buy Now
Rochester Electronics	2SK3666-3-TB-E		24,639		1	1 - 10 - 100 $0.08 1000 $0.06 10000 $0.06	Buy Now
Flip Electronics	2SK3666-3-TB-E		17,890			1 $0.03 10 $0.03 100 $0.03 1000 $0.03 10000 $0.03	Get Quote
onsemi 2SK3666-2-TB-E 2SK3666-2-TB-E N-CHANNEL JFET TRANSISTOR, 30 V, IDSS 0.6 TO 1.5MA, 3-PIN SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	2SK3666-2-TB-E	Bulk			100	1 - 10 - 100 $0.41 1000 $0.36 10000 $0.36	Get Quote
Rochester Electronics	2SK3666-2-TB-E		411,382		1	1 - 10 - 100 $0.07 1000 $0.06 10000 $0.05	Buy Now

2SK366 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K3667 Abstract: toshiba k3667 2SK3667 transistor compatible k3667 Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2sk3667 k3667 toshiba k3667 transistor compatible k3667	PDF
K3662 Abstract: 2SK3662 Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2sk3662 k3662	PDF
K3669 Abstract: 2SK3669 Contextual Info: 2SK3669 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSVII 2SK3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用順方向伝達アドミタンスが高い。 : \|Yfs\| = 6 S (標準)	Original	2sk3669 k3669	PDF
2SK3559 Abstract: IDA-20 Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal	Original	2sk3628/2sk3559/2sk3665/2sk3637/2sk3652 2sk3628 2sk3559 2sk3665 +42sk3637 2sk3652 e00128ae ida-20	PDF
K3662 Abstract: K366 2SK3662 Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2sk3662 k3662 k366	PDF
2SJ107 Abstract: 2SK366 Contextual Info: TO SH IB A 2SK366 TOSHIBA EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK366 FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND Unit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2 M AX. High Voltage Vg d S = - 4 0 V High Input Impedance IG S S = -l.O nA Max. (Vg s = -30V )	OCR Scan	2sk366 2sj107 55max	PDF
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2sk3662	PDF
2SK3666 Abstract: D1306 ITR00633 ITR00634 ITR00635 ITR00636 ITR00637 7013A-011 Contextual Info: 2SK3666 注文コード No. N 8 1 5 8 A 三洋半導体データシート半導体ニューズ No.N8158 とさしかえてください。 2SK3666 N チャネル接合形シリコン電界効果トランジスタ低周波一般増幅用 , インピーダンス変換用	Original	2sk3666 n8158 itr00637 itr00641 +8itr00642 itr00646 d1306 itr00633 itr00634 itr00635 itr00636 7013a-011	PDF
2SK3663 Contextual Info: データ・シートデータ・シート MOS 形電界効果トランジスタ形電界効果トランジスタ MOS Field Effect Transistor 2SK3663 N チャネル MOS FET スイッチング用 2SK3663 は，2.5 V 電源系による直接駆動が可能なス	Original	2sk3663 sc-70 d16529jj1v0ds00 2sk366v +2d16529jj1v0ds m8e02	PDF
Contextual Info: 2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2sk366 2sj107	PDF
toshiba k3667 Abstract: K3667 ALL k3667 K366 2SK3667 Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2sk3667 toshiba k3667 k3667 all k3667 +1k366	PDF
K3669 Abstract: 2SK3669 MJ1005 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2sk3669 k3669 mj1005	PDF
Contextual Info: Ordering number : EN8158B 2SK3666 N-Channel JFET http://onsemi.com 30V, 0.6 to 6.0mA, 6.5mS, CP Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • • Small IGSS Small Ciss Specifications	Original	en8158b 2sk3666	PDF
Contextual Info: 2SK3666 Ordering number : ENN8158 2SK3666 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.	Original	enn8158 2sk3666	PDF

2SJ107 Abstract: 2SK366 2SK3663 Toshiba 2SJ Contextual Info: 2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2sk366 2sj107 2sk3663 toshiba 2sj	PDF
Contextual Info: 2SK3666 Ordering number : EN8158B SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET 2SK3666 Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applications • Low-frequency general-purpose ampliﬁer, impedance conversion, infrared sensor applications	Original	2sk3666 en8158b	PDF
2SK3668 Abstract: 2SK3668-ZK Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high	Original	2sk3668 2sk3668-zk o-263 mp-25zk	PDF
K3669 Abstract: K366 2SK3669 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2sk3669 k3669 k366	PDF
SC-75 Abstract: 2SK3664 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent	Original	2sk3664 sc-75	PDF
Contextual Info: Transistors IC SMD Type Product specification 2SK3668 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. VGS = 10 V, ID = 5.0 A 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.55 Surface mount package available +0.2 2.54-0.2	Original	2sk3668 o-263	PDF
K3662 Abstract: 2SK3662 as58 Contextual Info: 2SK3662 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSIII 2SK3662 ○ スイッチングレギュレータ用 ○ DC-DC コンバータモータドライブ用単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 55 S (標準)	Original	2sk3662 sc-67 2-10r1b k3662 +1as58	PDF
K3667 Abstract: 2SK3667 S12C toshiba k3667 Contextual Info: 2SK3667 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ 2SK3667 ○ スイッチングレギュレータ用単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.5 S (標準)	Original	2sk3667 sc-67 2-10u1b k3667 +2s12c toshiba k3667	PDF
2SK3665 Contextual Info: Silicon MOSFET 2SK3665 N-channel enhancement mode MOSFET High speed switching Rating Unit Drain-Source breakdown voltage VDSS 200 V Gate-Source voltage VGSS ±30 V 3.0 φ 3.3±0.2 (1.5) 2.0±0.3 20.0±0.5 (2.5) Solder Dip Symbol Parameter 3.0±0.3 (1.5)	Original	2sk3665	PDF
K366 Abstract: K3669 2SK3669 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: \|Yfs\| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)	Original	2sk3669 k366 k3669	PDF

2SK366 Search Results

2SK366 Datasheets (30)

2SK366 Price and Stock

Renesas Electronics Corporation 2SK3663-T1-A

Renesas Electronics Corporation 2SK3668-ZK-E1-AY

onsemi 2SK3666-3-TB-E

onsemi 2SK3666-2-TB-E

2SK366 Datasheets Context Search

K3667

K3662

K3669

2SK3559

K3662

2SJ107

2SK3666

2SK3663

toshiba k3667

K3669

2SJ107

2SK3668

K3669

SC-75

K3662

K3667

2SK3665

K366