2SK3637 Search Results

2SK3637

Contextual Info: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1

2SK3559

Abstract: IDA-20
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

2SK3637

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current

Contextual Info: Transistors IC SMD Type Product specification 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2

2SK3637

Contextual Info: Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 000 mJ PD

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching 5˚ (4.0) 2.0±0.2 5˚ 18.6±0.5 (2.0) Solder Dip M Di ain sc te on na tin nc ue e/ d

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm φ 3.2±0.1 For PDP/For high-speed switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 200 V VGSS ±30 V Drain current

2sk3637

Abstract: 5503 MOSFET
Contextual Info: Silicon MOSFET 2SK3637 N-channel enhancement mode MOSFET High speed switching φ 3.2±0.1 VDSS 200 V Gate-Source voltage VGSS ±30 V 50 A IDP 200 A EAS 2000 mJ Allowable power Tc = 25 °C *2 dissipation Ta = 25 °C *3 PD 100 W PD 3 W Junction temperature Tj

2sk3665

Abstract: 2SK3559 2SK3628 2SK3652 2SK3637 2SK3665 equivalent input id
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and