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    Vishay Intertechnologies CRCW0603100KFKEA

    Thick Film Resistors - SMD 1/8 Watt 100Kohms 1%
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    TTI CRCW0603100KFKEA Reel 6,430,000 5,000
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    Murata Manufacturing Co Ltd GRM31CR72E104KW03L

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1 uF 250 VDC 10% 1206 X7R
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    TTI GRM31CR72E104KW03L Reel 56,000 2,000
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    YAGEO Corporation AF0402FR-07100KL

    Thick Film Resistors - SMD 100 kOhms 62.5 mW (1/16 W) 0402 1 % AEC-Q200
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    TTI AF0402FR-07100KL Reel 30,000 10,000
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    YAGEO Corporation RT0402BRD0753K6L

    Thin Film Resistors - SMD 1/16W 53.6K ohm .1% 25ppm
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    TTI RT0402BRD0753K6L Reel 20,000 10,000
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    Amphenol Corporation MS3475W106S

    Circular MIL Spec Connector MB 6C 6#20, SKT PLUG w/RFI GROUNDING
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    TTI MS3475W106S Each 196 1
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    K3667 Datasheets Context Search

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    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Contextual Info: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667 PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 K366 2SK3667
    Contextual Info: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667 PDF

    K3667

    Abstract: 2SK3667 K366 2-10U1B
    Contextual Info: K3667 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3667 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)


    Original     		2SK3667 SC-67 2-10U1B K3667 2SK3667 K366 2-10U1B PDF

    K3667

    Abstract: 2SK3667 S12C toshiba k3667
    Contextual Info: K3667 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3667 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)


    Original     		2SK3667 SC-67 2-10U1B K3667 2SK3667 S12C toshiba k3667 PDF

    toshiba k3667

    Abstract: K3667 ALL k3667 2SK3667
    Contextual Info: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667 PDF

    K3667

    Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
    Contextual Info: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 PDF

    K3667

    Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent
    Contextual Info: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent PDF