2SJ14 Search Results

2SJ148

Abstract: 2SK982
Contextual Info: 2SJ148 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ148 ○ 高速スイッチング用 ○ アナログスイッチ用 ○ インタフェース用 • スイッチング時間が速い。 単位: mm : ton = 14 ns 標準 • 順方向伝達アドミタンスが高い。

Contextual Info: 2SJ146 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)8.0 I(D) Max. (A)100m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC)

2SJ147

Contextual Info: TOSHIBA 2SJ147 Field Effect Transistor Silicon P Channel M OS Type ji-MOS II Audio Frequency Power Amplifier Application Features • Low Drain-Source ON Resistance • R d s (o n ) = 0 - 1 7 0 c ry p .) • High Forward Transfer Adm ittance - 'Yfs = 4 .OS (Typ.)

2SJ148

Abstract: 2SK982
Contextual Info: TO SH IBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance : |Yfs| = lOOmS (Min.)

2SJ146

Contextual Info: Silicon MOS FETs Small Signal 2SJ146 Silicon P-Channel MOS FET For switching unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 2.9 –0.05 ue pl d in an c se

2SJ144

Contextual Info: TO SH IB A 2SJ144 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 44 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS ANALOG SWITCH APPLICATIONS 2.1 ±0.1 CONSTANT CURRENT APPLICATIONS IMPEDANCE CONVERTER APPLICATIONS . 1.25 ± 0.1

2SJ148

Abstract: 2SK982
Contextual Info: TO SHIBA 2SJ148 2 S J 1 48 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 M AX. INTERFACE APPLICATIONS 0.45 Excellent Switching Time ton - 14ns Typ. High Forward Transfer Admittance

2SJ144

Contextual Info: SILICON P CHANNEL JUNCTION TYPE 2SJ144 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm ANALOG SWITCH APPLICATIONS. 2.1 CONSTANT CURRENT APPLICATIONS. ± 0.1 1.2 5 ± 0 .1 1 IMPEDANCE CONVERTER APPLICATIONS. • High Breakdown Voltage: • High Input Impedance:

2SJ147

Contextual Info: FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ147 7T-MOSII HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in mm DRIVE APPLICATIONS 1 0.3MAX, 0 3.2 ± 0 2 7.0 FEATURES : • Low Drain-Source ON Resistance

Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

Toshiba 2SJ

Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SJ144

Abstract: Toshiba 2SJ
Contextual Info: 2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V min

2SJ148

Abstract: 2SK982
Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SJ148

Abstract: 2SK982 Toshiba 2SJ
Contextual Info: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. · High forward transfer admittance: |Yfs| = 100 mS (min)

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

Contextual Info: 2SJ146 Silicon MOS FETs Small Signal 2SJ146 Silicon P-Channel MOS Unit : mm For switching +0.2 2.8 –0.3 +0.25 1.45 1 3 +0.1 taping/magazine packing are available. 0.65±0.15 +0.1 +0.2 – 50 Gate-Source voltage VGSO Drain current ID –100 mA Max drain current

2sJ142

Abstract: 100U
Contextual Info: M OS A H U M » « '« ? M O S F ie ld E f f e c t P o w e r T r a n s is t o r 2SJ142 P 2 S J 1 4 2 I t . P - f i v « U i ' ir 7 7 — M O S F E T T \ 5 V M O S * . Ç * +>7 7 '<A A r i . F E T I C * * / - f y i m t t t a K - c *•*>. * - * . • *ax

2sa 750

Abstract: RANSISTOR 251C 2SJ143 T99 V0
Contextual Info: MOS M O S Field E ffe c t P o w e r Transistor 2SJ143 P 7 - MOS F E T i i t s j i 43 u . p * -r * » m y ’ * n - M o s f e t t . A A â C 't « * * « ! * * “ * * * * * * * m 5 v %* * ic •, + > r - ? * < x T r . *>«*»*<. x-f, * - f . yir'>-f >•, * > 7»w »P(:*ü-rf.

2SJ144

Contextual Info: 2SJ144 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANNEL JUNCTION TYPE 2 S J 1 44 Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS A N A LO G SWITCH APPLICATIONS 2.1 ± 0.1 CONSTANT CURRENT APPLICATIONS 1.25 ± 0.1 IM PEDANCE CONVERTER APPLICATIONS

Toshiba 2SJ

Contextual Info: 2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V min

2SJ144

Contextual Info: 2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V min

2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Contextual Info: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII

2SJ144

Abstract: Toshiba 2SJ
Contextual Info: 2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V min

2SJ146

Contextual Info: Silicon MOS FETs Small Signal 2SJ146 Silicon P-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic