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    2SK388 Search Results

    2SK388 Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK388
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK388
    Toshiba Original PDF 44.05KB 9
    2SK388
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 123.53KB 1
    2SK388
    Unknown FET Data Book Scan PDF 96.26KB 2
    2SK388
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 86.52KB 1
    2SK388
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 58.42KB 1
    2SK388
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 63.92KB 1
    2SK3880
    Toshiba Field Effect Transistor / Silicon N-Channel MOS Type Original PDF 259.81KB 6
    2SK388/1
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 86.52KB 1
    2SK388/2
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 86.52KB 1
    2SK388/3
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 86.52KB 1
    2SK388/4
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 86.52KB 1
    2SK388/5
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 86.52KB 1
    2SK388/6
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 86.52KB 1
    2SK3887-01
    Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF 92.76KB 4
    2SK3888-01MR
    Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF 95.66KB 4
    2SK3889-01L
    Fuji Electric N-Channel Silicon Power MOSFET, Super FAP-G Series Original PDF 249.89KB 4
    2SK3889-01S
    Fuji Electric N-Channel Silicon Power MOSFET, Super FAP-G Series Original PDF 249.89KB 4
    2SK3889-01SJ
    Fuji Electric N-Channel Silicon Power MOSFET, Super FAP-G Series Original PDF 249.89KB 4
    SF Impression Pixel

    2SK388 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SK3880(F)

    Trans MOSFET N-CH Si 800V 6.5A 3-Pin(3+Tab) TO-3P(N)IS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3880(F) 95 58
    • 1 -
    • 10 -
    • 100 $1.49
    • 1000 $1.49
    • 10000 $1.49
    Buy Now
    Quest Components 2SK3880(F) 76
    • 1 $3.46
    • 10 $3.46
    • 100 $1.91
    • 1000 $1.91
    • 10000 $1.91
    Buy Now

    2SK388 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK388

    Abstract: 2sk38
    Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)


    OCR Scan
    2sk388100na2sk38 PDF

    2sk3880

    Contextual Info: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2sk3880 PDF

    2SK3887-01

    Contextual Info: 2SK3887-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original
    2sk3887-01o-220ab PDF

    K3880

    Abstract: toshiba K3880
    Contextual Info: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2sk3880k3880toshiba k3880 PDF

    2SK3889-01L

    Contextual Info: 2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original
    2sk3889-01l PDF

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan
    2sj1152sj1232sj1472sk357+162sk3582sk3852sk3862sk3872sk3882sk405mg15g1al3mg400h12sk11242sk7912sk525mp61012sk5312sk6742sk6732sk405 2sj115 PDF

    K3880

    Abstract: 2SK3880 toshiba K3880
    Contextual Info: 2SK3880 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3880 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.2S (標準)


    Original
    2sk388010vid2-16f1bk3880+1toshiba k3880 PDF

    Contextual Info: 2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original
    2sk3889-01l PDF

    2SK3888-01MR

    Contextual Info: 2SK3888-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original
    2sk3888-01mro-220f PDF

    K3880

    Abstract: 2SK3880 diode marking 1200
    Contextual Info: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2sk3880k3880diode marking 1200 PDF

    2SK3887-01

    Contextual Info: 2SK3887-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original
    2sk3887-01o-220ab PDF

    K3880

    Abstract: 2SK3880 toshiba K3880
    Contextual Info: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2sk3880k3880toshiba k3880 PDF

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


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    2sk355irf2412sk357buz30+15buz43airf6232sk358buz602sk3822n4351 motorolamrf9663sk1242n3819 motorolabfs283sk45bsv812n4221 motorolabc547 motorola3sk76 PDF

    k3880

    Contextual Info: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2sk3880k3880 PDF

    diode sj

    Abstract: 2SK388 2SK3889-01L MOSFET 600V 36A
    Contextual Info: 2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original
    2sk3889-01ldiode sj2sk388mosfet 600v 36a PDF

    K3880

    Abstract: 2SK3880
    Contextual Info: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2sk3880k3880 PDF

    Contextual Info: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original
    2sk3880 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    5252 f 1009 4-pintpc 8028marking s3h sot363tk8a50d equivalent+6tk6a65d equivalent2sk4112tpca8030-htoshiba laptop charging circuit diagramtk80a08k3tpca*8025 PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    sce0001cs-167sce0001dtoshiba tmpa8873+9ta1343ngtmpa8891tmpa8893tmpa8873tmpa8859tc90a96bfgtb1318fgtmpa8857tmpa8853 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603 PDF

    2sk3882

    Abstract: 2SK3882-01 2sk38 MS5F5909
    Contextual Info: DATE DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 CHECKED Sep.-16-'04 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original
    2sk3882-01ms5f5909h04-004-05h04-004-03+22sk38822sk38 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF