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2SK30ATM Datasheets (17)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK30ATM	Toshiba	Field Effect Transistor Silicon N Channel Junction Type	Original	PDF	307KB	4
2SK30ATM	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	40.72KB	1
2SK30ATM	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	85.77KB	1
2SK30ATM	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	36.3KB	1
2SK30ATM	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	111.2KB	1
2SK30ATM	Unknown	FET Data Book	Scan	PDF	102.32KB	2
2SK30ATM	Toshiba	FET	Scan	PDF	206.2KB	3
2SK30ATM	Toshiba	Silicon N channel field effect transistor for low noise pre-amplifier, tone control amplifier and DC-AC high input impedance amplifier circuit applications	Scan	PDF	223.25KB	4
2SK30ATM	Toshiba	Junction FETs	Scan	PDF	41.48KB	1
2SK30ATM-G	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	85.77KB	1
2SK30ATMGR	Toshiba	TRANS JFET N-CH -5MA 3(2-5F1C)	Original	PDF	307KB	4
2SK30ATMO	Toshiba	TRANS JFET N-CH -5MA 3(2-5F1C)	Original	PDF	307KB	4
2SK30ATM-O	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	85.77KB	1
2SK30ATM-R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	85.77KB	1

2SK30ATMR	Toshiba	Silicon N-Channel Junction Transistor	Scan	PDF	129.98KB	3
2SK30ATMY	Toshiba	TRANS JFET N-CH -5MA 3(2-5F1C)	Original	PDF	307KB	4
2SK30ATM-Y	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	85.77KB	1

2SK30ATM Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SK30ATM-O Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SK30ATM-O		980			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK30ATM-Y Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SK30ATM-Y		870			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK30ATM-GR Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SK30ATM-GR		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK30ATM Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SK30ATM		700			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK30ATM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK30ATM-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2sk30atm-o	PDF
Contextual Info: 2SK30ATM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Í I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)6.5m	Original	2sk30atm	PDF
2SK30ATM Y Abstract: 2SK30ATM 0 2sk30atm Contextual Info: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2sk30atm sc-43 2sk30atm y 2sk30atm 0	PDF
Contextual Info: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 QA T M Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS .5.1 M AX. • High Breakdown Voltage : V q d s = —50V	OCR Scan	2sk30atm --50v	PDF
2SK30A Abstract: 2SK30ATM 0 2SK30ATM Contextual Info: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : V jß g = —50V	OCR Scan	2sk30atm 100kn 120hz sc-43 +3100ko 2sk30a 2sk30atm 0	PDF
2SK30ATM 0 Abstract: 2SK30ATM TOSHIBA 2SK30ATM Contextual Info: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V	OCR Scan	2sk30atm 100ka 2sk30atm 0 toshiba 2sk30atm	PDF
Contextual Info: 2SK30ATM-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2sk30atm-r	PDF
2SK30A Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM Contextual Info: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V	OCR Scan	2sk30atm 100ka 2sk30a 2sk30atm y +22sk30atm 0 toshiba 2sk30atm	PDF
2SK30ATM Abstract: 2SK30ATM Y 2SK30ATM 0 2SK30A Contextual Info: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2sk30atm sc-43 2sk30atm y 2sk30atm 0 +12sk30a	PDF
2sk170 FET Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14 Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch	Original	2sk246 2sj103 2sk117 2sk362 +132sk363 2sk364 2sj104 2sk30atm 2sk170 2sj74 2sk170 fet junction-fet fet to92 2sk118 2sk879 2sj105 2sj14	PDF
2SK241 Equivalent FET Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo	OCR Scan	ot-23mod ot-143mod 2sk208 2sk209 +162sk210 2sk211 2sk302 2sk368 2sk1062 2sk1771 2sk241 equivalent fet 2sk117 equivalent 200 amp mosfet k 2545 mosfet 3sk fet 2sk192a equivalent 2sk241 equivalent tv ic equivalent 2sk161 equivalent gaas fet vhf uhf	PDF
Contextual Info: 2SK30ATM-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2sk30atm-gr	PDF
2SK30ATM Abstract: 2SK30ATM Y 2SK30ATM 0 Contextual Info: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2sk30atm 2sk30atm y 2sk30atm 0	PDF
2SK30ATM Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM Contextual Info: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2sk30atm sc-43 2sk30a 2sk30atm y +22sk30atm 0 toshiba 2sk30atm	PDF

Contextual Info: T O SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • High Breakdown Voltage : VGj g = —50V	OCR Scan	2sk30atm 100kn 120hz	PDF
2SK30A Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 Contextual Info: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2sk30atm 2sk30a 2sk30atm y 2sk30atm 0	PDF
TOSHIBA 2SK30ATM Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 Contextual Info: TO SH IBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : VGD g = —50V	OCR Scan	2sk30atm 100kn 120hz sc-43 +3toshiba 2sk30atm 2sk30atm y 2sk30atm 0	PDF
b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	2n3713 2n3714 2n3715 2n3716 +162n3789 2n3790 2n3791 2n3792 2n4340 2n4340s b1375 2sk270a 2sk150a mg15g1al2 2sa1051b mg50g2cl1 mg100g1al2 2sa1015 a1265n mg100g1al1	PDF
ISS226 Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier Contextual Info: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta = 25°C) V d sx V V * gdo grd * Ig , I d * (mA) Po(mW)	OCR Scan	2sk208 2sk30atm 2sk209 2sk210 +112sk211 2sk117 2sk161 2sk241 isv128 iss226 isv99 2sk toshiba 302v marking a3 amplifier u marking amplifier	PDF
2sj111 fet Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110 Contextual Info: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < \|Yfs\| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)	OCR Scan	2sk30atm 2sk117 2sk170 2sk246 +102sk362 2sk363 2sk364 2sk369 2sk373 2sj74 2sj111 fet 2sj111 2sk30a 2sj110	PDF
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	2n3903 2n3904 2n3905 2n3906 +162n4123 2n4124 2n4125 2n4126 2n4401 2n4402 2n3904 331 transistor c549 transistor 2sk1227 transistor 1201 1203 1205 transistor c549 transistor hand book 2n5551 2sc1815 2sk246 2n4401 331 02cz27 transistor 737	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2sc429gtm 2sc458 2sc458lg 2sc503 +162sc504 2sc510 2sc512 2sc519 2sc520a 2sc594 sn76131 tlo72cp toshiba 2n3055 m53207p 2n3055 toshiba kia7313ap kia7640ap la5530 m5l8155p tbb1458b	PDF
2SK520 Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43 Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id	OCR Scan	2sj299 2sj300 2sj317 2sk11 +152sk12 2sk521 100mhz 2sk522 20mvmax 2sk523 2sk520 2sk508 2sk537 2sk515 2sk511 2sk514 2sk518 2sk519 2sk43	PDF
ISS226 Abstract: ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181 Contextual Info: Sb TOSHIBA íDISCRET E/O PTO> 9097250 '•i, D I S C R E T E / OPTO _ 5bC TOSHIBA Di f1\| c] 0 ci 7 e S D 07 103 □□□71D3 D 0 3 - ° ^ .c; . V FET - _ A p plication Typ e Low frequency amplifier Low noise low 2SK 209 frequency amplifier FM R F	OCR Scan	1017esd ddd71g3 2sk208 2sk30atm +142sk209 2sk117 2sk210 2sk192a 2sk211 2sk161 iss226 iss184 isv128 fet 2sk161 low frequency amplifier isv99 2sk241 mos fet iss181	PDF

2SK30ATM Search Results

2SK30ATM Datasheets (17)

2SK30ATM Price and Stock

Toshiba America Electronic Components 2SK30ATM-O

Toshiba America Electronic Components 2SK30ATM-Y

Toshiba America Electronic Components 2SK30ATM-GR

Toshiba America Electronic Components 2SK30ATM

2SK30ATM Datasheets Context Search

2SK30ATM Y

2SK30A

2SK30ATM 0

2SK30A

2SK30ATM

2sk170 FET

2SK241 Equivalent FET

2SK30ATM

2SK30ATM

2SK30A

TOSHIBA 2SK30ATM

b1375

ISS226

2sj111 fet

2N3904 331 transistor

sn76131

2SK520

ISS226