2SK18 Search Results

Contextual Info: 2SK1895 2063 LD L o w D rive S eries V DSS= 6 0 V N Channel Power M OSFET £ 4 20 7 F e a tu r e s • Low O N re sista n c e . • V ery h ig h -sp eed sw itch in g . • Low -voltage d riv e. • M icaless pack ag e fa c ilita tin g m o u n tin g . A b s o lu te M a x im u m R a ti n g s a t T a = 25°C

2SK1901

Contextual Info: 11 LO Seríes Lineup V DSS = 100V, N-channel Absolute maximum ratings at Ta =25°C Type No. 2SK1849 Package V d ss VGSS V (V) CP 2SK1473 2SK1728 % ?o‘ (A) m 0.25 0.25 t Electrical characteristics atTa = 25°C ^G S (off) min to max (V) 2.0 ^D S (on) ^D S (on)

Contextual Info: 2SK1888 2063 L D L o w D riv e S e r ie s V d s s ^ S O V N Channel Power M OSFET £42 0 4 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

AX-8377

Contextual Info: 2SK1898 LD L o w D rive S eries V DSS= 6 0 V N Channel Power M OSFET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SKl898-applied equipment.

2SK1821-01M

Contextual Info: 2SK1821-01M N-channel MOS-FET FAP-IIA Series 600V > Features - 6,5Ω 2A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK1830

Contextual Info: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

2SJ343

Abstract: 2SK1826
Contextual Info: 2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1826

Hitachi DSA001652

Contextual Info: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter

Hitachi DSA001652

Contextual Info: 2SK1880 L , 2SK1880(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate

Contextual Info: 2SK1819-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features Include fast recovery diode High voltage Low driving power TO-220F15 Applications Motor controllers Inverters Choppers 2.54 3. Source JEDEC EIAJ SC-67 Equivalent circuit schematic

2SK1838

Abstract: Hitachi DSA00347
Contextual Info: 2SK1838 L , 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1

Contextual Info: Reliability Tests Report Product Name: 2SK1830 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SK1833

Contextual Info: 2SK1833 Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS Unit : mm • Features 0.7±0.1 ● Avalanche energy capability guaranteed : EAS > 90mJ 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 ● No secondary breakdown 7.5±0.2 switching : tf= 30ns 16.7±0.3 ● High-speed

CHN 950

Abstract: chn 630
Contextual Info: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-IHA SERIES • Features Outline Drawings • High current • -ow on-resistance • Mo secondary breakdown • .ow driving power • High forward Transconductance

TEA-1035

Abstract: 2SK1853 MEI-1202 TC-2446 8002 1035
Contextual Info: DATA SHEET ^^m sm 3 NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1853 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1853 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millim eters designed for solenoid, motor and lamp driver.

TEA-1035

Abstract: tea 1402 2SK1852 MEI-1202 8002 1035
Contextual Info: DATA SHEET NEC ^^MBEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1852 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1852 is N -channel M O S Field Effect Transistor PACKAGE DIMENSIONS in millim eters designed fo r solenoid, m o to r and lam p driver.

2SK1341

Abstract: 2SK1859
Contextual Info: 2SK1859 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator 2 1 1 23 1. Gate 2. Drain 3. Source

Hitachi DSA002748

Contextual Info: 2SK1807 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB

Hitachi DSA002748

Contextual Info: 2SK1809 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline TO-220AB

Hitachi DSA002780

Contextual Info: 2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3

Hitachi DSA002779

Contextual Info: 2SK1838 L , 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Unit −40 V Gate-source voltage (Drain open) VGSO

2SK1865

Contextual Info: TOSHIBA 2SK1865 Field Effect Transistor Silicon N Channel MOS Type rc-MOS 111.5 Industrial Applications Unit in mm High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0 .5 5 ii (Typ.) • High Forward Transfer Admittance

Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator