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    2SK183 Search Results

    2SK183 Datasheets (108)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK183
    Unknown FET Data Book Scan PDF 101.29KB 2
    2SK183
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.94KB 1
    2SK1830
    Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.5) (max 1.5); R DS On 20 (max 40); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 50) Original PDF 278.87KB 5
    2SK1830
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 129.71KB 1
    2SK1830
    Toshiba TRANS MOSFET N-CH 20V 0.05A 3(2-2H1B) Scan PDF 194.81KB 4
    2SK1830
    Toshiba Silicon N channel field effect transistor for high speed switching applications and analog switch applications Scan PDF 202.17KB 4
    2SK1830
    Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF 202.17KB 4
    2SK1830TE85L
    Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF 278.85KB 5
    2SK1830(TE85L,F)
    Toshiba 2SK1830 - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF 278.85KB 5
    2SK1830TE85LF
    Toshiba 2SK1830TE85LF - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF 278.85KB 5
    2SK1830TE85R
    Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF 278.85KB 5
    2SK1831
    Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF 33.45KB 6
    2SK1831
    Hitachi Semiconductor Silicon N Channel MOS FET Original PDF 33.53KB 6
    2SK1831
    Hitachi Semiconductor Mosfet Guide Original PDF 6.15MB 1147
    2SK1831
    Renesas Technology Silicon N-Channel MOS FET Original PDF 52.62KB 8
    2SK1831
    Hitachi Semiconductor Power Transistors Data Book Scan PDF 117.65KB 1
    2SK1831
    Unknown FET Data Book Scan PDF 110.4KB 2
    2SK1831
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 129.71KB 1
    2SK1831
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 79.04KB 1
    2SK1832
    Hitachi Semiconductor Mosfet Guide Original PDF 6.15MB 1147
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    2SK183 Price and Stock

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    onsemi 2SK1839-TL-E

    2SK1839-TL-E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1839-TL-E 45,000 5,455
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    • 10000 $0.06
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    Rochester Electronics 2SK1839-TL-E 45,000 1
    • 1 -
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    • 100 $0.07
    • 1000 $0.06
    • 10000 $0.05
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    Renesas Electronics Corporation 2SK1838STR-E

    Trans MOSFET N-CH Si 250V 1A 3-Pin(2+Tab) DPAK(S) T/R
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    Verical () 2SK1838STR-E 3,000 164
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    • 1000 $2.06
    • 10000 $1.94
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    2SK1838STR-E 2,363 2
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    Rochester Electronics 2SK1838STR-E 3,000 1
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    • 100 $1.84
    • 1000 $1.65
    • 10000 $1.55
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    Toshiba America Electronic Components 2SK1830(T5L,F,T)

    2SK1830(T5L,F,T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1830(T5L,F,T) 3,000 2,094
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    • 10000 $0.16
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    Rochester Electronics 2SK1830(T5L,F,T) 3,000 1
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    • 100 $0.17
    • 1000 $0.14
    • 10000 $0.13
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    Renesas Electronics Corporation 2SK1838S-E

    Trans MOSFET N-CH Si 250V 1A 3-Pin(2+Tab) DPAK(S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1838S-E 2,810 164
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    Rochester Electronics 2SK1838S-E 2,810 1
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    • 100 $1.84
    • 1000 $1.65
    • 10000 $1.55
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    Renesas Electronics Corporation 2SK1838L-E

    Trans MOSFET N-CH Si 250V 1A 3-Pin(3+Tab) DPAK(L)-(1) Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1838L-E 1,776 164
    • 1 -
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    • 10000 $1.94
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    Rochester Electronics 2SK1838L-E 1,776 1
    • 1 -
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    • 100 $1.84
    • 1000 $1.65
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    2SK183 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • 2.5 V olts G ate D rive. • Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V . H igh Speed • Enhancem ent-M ode • S m a ll P ackage MARKING KI M A X IM U M RATINGS Ta = 25°C


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    2sk1830 PDF

    2SJ347

    Abstract: 2SK1830
    Contextual Info: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking


    Original
    2sj3472sk1830 PDF

    k1832

    Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
    Contextual Info: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2


    Original
    2sk18312sk1832sou150k1832+3k18312sk11572sk1158 PDF

    TOP-220

    Abstract: TOP220 top 220 2SK1834 2SK183
    Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0


    Original
    2sk1834sc-67op-220top-220+3top220top 2202sk183 PDF

    Contextual Info: 2SK1836, 2SK1837 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter


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    2sk18362sk1837k1836k1837 PDF

    Hitachi DSA002748

    Contextual Info: 2SK1831, 2SK1832 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline


    Original
    2sk18312sk1832k1831k1832+2d-85622hitachi dsa002748 PDF

    Hitachi DSA002748

    Contextual Info: 2SK1835 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500V High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline and Equivalent Circuit


    Original
    2sk1835d-85622hitachi dsa002748 PDF

    2SJ347

    Abstract: 2SK1830
    Contextual Info: TO SH IBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ347 Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V t h = —0.5 ~ —1.5V • High Speed • Small Package • Complementary to 2SK1830


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    2sj3472sk1830 PDF

    2SJ347

    Abstract: 2SK1830
    Contextual Info: TOSHIBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ347 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V ^ ——0.5~ —1.5V • High Speed • Small Package • Complementary to 2SK1830


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    2sj3472sk183010//s PDF

    TOP-220

    Abstract: top 220 2SK1834 2sk18 TOP220
    Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 7.5±0.2 4.0 14.0±0.5 Symbol


    Original
    2sk1834sc-67op-220top-220+3top 2202sk18top220 PDF

    Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


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    hn7g01fu2sa19552sk1830 PDF

    Contextual Info: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking


    Original
    2sk1830 PDF

    2SK1835

    Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator


    Original
    2sk1835rej03g0978-0400prss0004ze-a PDF

    2SK1830

    Abstract: HN7G02FU RN2110
    Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


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    hn7g02furn21102sk1830 PDF

    2SJ347

    Abstract: 2SK1830 Toshiba 2SJ
    Contextual Info: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm


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    2sj3472sk1830toshiba 2sj PDF

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


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    2sk29122sk29382sk29392sk2940+122sk29572sk29582sj21s2sj21728k11612sk11622sk2829spl 7402sk12sk272828k132sk151 PDF

    2SK1835

    Abstract: 2SK1835-E PRSS0004ZE-A SC-65
    Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator


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    2sk1835rej03g0978-0400prss0004ze-a2sk1835-e+1sc-65 PDF

    2SA1955

    Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
    Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


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    hn7g01fu2sa19552sk18302sk1830 mosfet PDF

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original
    hn7g01fu2sa19552sk1830power mosfet, toshiba+1high power mosfet toshiba PDF

    Contextual Info: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K18 3 0 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5V Gate Drive • Low Threshold Voltage : V£h = 0.5~1.5V • High Speed • Enhanncement-Mode • Small Package


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    2sk1830 PDF

    2824R

    Abstract: 2SK1839 EN4634 sanyo OIS
    Contextual Info: Ordering num ber: EN4634 2SK1839 No.4634 SANYO i N -Channel E nhancem ent MOS Silicon FET Analog Switch Applications F e a tu re s • Very small-sized package perm itting 2SK1839-applied sets to be made sm all and slim. • Large I Yfs I • Enhancem ent type.


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    2sk18392sk1839-applied10//a2824r+2en4634sanyo ois PDF

    Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1838S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switchingregulator, DC-DC converter +0.1 0.60-0.1 2.3 +0.15 5.55-0.15


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    2sk1838so-252 PDF

    Contextual Info: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package


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    2sk1830 PDF

    8150 diode

    Abstract: Hitachi DSA002779
    Contextual Info: 2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D


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    2sk18362sk1837k1836k1837+3d-856228150 diodehitachi dsa002779 PDF