K1837 Search Results

Contextual Info: K1837-18 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)135õ I(GSS) Max. (A)250p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2SK1836, K1837 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

mpf102 equivalent

Abstract: MPF102 JFET MPF102 y parameters 2N4416-16A equivalent mpf102 U1994 2N5668-70 MPF112 2N4416-16A 2N5555
Contextual Info: NH n-channel JFET GATE ALSO BACKSIDE CONTACT H d e s ig n e d fo r . . . S ilic o n ix • V H F /U H F Amplifier* BENEFITS: • Oscillators • Low Noise NF - 3 dB Typical @ 400 MHz • Wideband High fffj/Cjss Ratio ■ Mixers ■ Low Input Capacitance High Speed

MPF102

Abstract: J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112
Contextual Info: 2N3966 s n-channel JFET S ilico n ix Performance Curves NH See Section 5 designed fo r . . . • Analog Switches ■ Choppers ■ Commutators B EN EF IT S Low Insertion Loss, No Offset Voltage R DS on < 220 n Short Switching Aperture Times Crss < 1-5 pF t ( o n ) + tfoff) < 50 n s Typical

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

mpf102 equivalent

Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6
Contextual Info: S Siliconix • VH F/U H F A m plifiers ■ Oscillators ■ M ixers J305 P erform ance Curves N H See Section 5 J304 n-channel JFETs designed fo r . B EN EFITS • Characterized for Operation at 100 and 400 MHz • Low Noise NF = 1.7 dB Typical at 100 MHz

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

8150 diode

Abstract: Hitachi DSA002779
Contextual Info: 2SK1836, K1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D

Contextual Info: 2SK1836, K1837 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2 1

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SK1836

Abstract: 2SK1837 K1836 K1837 DSA003639
Contextual Info: 2SK1836, K1837 Silicon N-Channel MOS FET ADE-208-1326 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

U1994

Abstract: 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416
Contextual Info: d e s ig n e d fo r . S ili c o n ix IH si?l 2 5 ?ine5 Curv8S K . . • VHF/UHF Amplifiers m K l8 3 7 -18 s n-channel JFET b e n e fits * *pecifiecl for2 °M Hz0peration Mixers ■ Oscillators TO-92 See Section 7 AB SO LUTE M A X IM U M R A TIN G S 25°C

K1837

Contextual Info: 2SK1836,K1837 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • No secondary breakdow n • Suitable for sw itchirigregulator, D C-D C converter

2N5668-70

Abstract: Bfj 65 mpf102 equivalent 2N3966 2N4416-16A 2N5484 2N5485 2N5486 2N5555 MPF102
Contextual Info: designed for 3 Siliconix . Perform ance Curves N H See Section 5 B EN EFITS • Low Cost • Analog Switches ♦A B SO LU TE M A X IM U M R A TIN G S 25°C Drain-Gate V o lta g e . 25 V Source Gate V o lta g e .

K1837

Abstract: 2SK1836 2SK1837 K1836 DSA003720
Contextual Info: 2SK1836, K1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D

U1994

Abstract: mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112
Contextual Info: MPF108 n-channel JFET d e s ig n e d f o r a S ilic o n ix . . . Performance Curves NH See Section 5 • VHF/UHF A m plifiers B E N E F IT S ■ M ixers • L ow Cost • A u to m a tic Insertion Package ■ Oscillators TO-92 See Section 7 A B S O L U T E M A X IM U M R A T IN G S 25°C

K1837

Abstract: 2SK1836 2SK1837 K1836
Contextual Info: 2SK1836, K1837 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2 1

Hitachi DSA002748

Contextual Info: 2SK1836, K1837 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline

bfj 47

Abstract: 2N5669 mpf102 equivalent 2N5668-70 2N5670 MPF112 2N5668 MPF102 U1994 BFJ 50
Contextual Info: ailiconix 4H 2N5669 Am plifiers b e n e f it s M ixers | Oscillators • Automatic Insertion Package Specified for 100 MHz Opt»ration 2N5670 * ABSOLUTE M A XIM U M RATINGS 25°C Drain-Gate V