2SK1058 Search Results

Contextual Info: 2SJ160,2SJ161,2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation

Hitachi 2SJ

Abstract: 2SK1058 J162
Contextual Info: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation

2SK1058

Abstract: Hitachi 2SJ Hitachi DSA002780 HITACHI 2sk1058
Contextual Info: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation

2SJ162

Abstract: 2SJ160 KC510 2SK1058 2SJ161 2SK1056 2SK1057 T160 25J160 25J16
Contextual Info: HITACHI 2SJ160,2SJ161,2SJ162 SILICON P-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • FEATURES • • • • • • • 1. Gate Good Frequency Characteristic High Speed Switching Wide Area of Safe Operation

2sj162

Abstract: hitachi audio power amplifier HITACHI 2SJ162 2SK1058 2SJ160 Hitachi 2SJ Hitachi DSA002756 2SK1057 hitachi all fet audio application
Contextual Info: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation

k 1058

Abstract: K1058 2sk1058 K1057 Hitachi 2SJ
Contextual Info: 2SK1056,2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI Application Low frequency pow er am plifier C om plem entary pair w ith 2SJ160, 2SJ161 and 2SJ162 Features • G ood frequency characteristic • H igh speed sw itching • W ide area o f safe operation

2SK1058

Abstract: 2SK135 audio amplifier 2sk135 audio application 2sk135 2sk135 application 2SK134 2SK1057 2SK133 2sk1058 2sj162 2sk1058 equivalent
Contextual Info: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application TO–3P Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • 3 Good frequency characteristic High speed switching Wide area of safe operation

2SK1058

Abstract: transistor 2sj162 2SK1058-E 2SJ160 2SJ161 2SJ162 2SK1056 2SK1057 PRSS0004ZE-A SC-65
Contextual Info: 2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET REJ03G0906-0200 Previous: ADE-208-1244 Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic

HITACHI 2SJ162

Abstract: Hitachi 2SJ Hitachi DSA002779 2SJ162 2sk1058 2SJ162
Contextual Info: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation

2SK1045

Abstract: 2SK1048 2sk1050 2SK1044 2SK1060 2sk1039 2SK1047 2SK1046 2SK1042 2SK1043
Contextual Info: - 82 - gy % 2SK1037 2SK1038 2SK1039 2SK1040 2SK1Ö41 2SK1042 2SK1043 2SK1044 2SK1045 2SK1046 2SK1047 2SK1048 2SK1049 2SK1050 2SK1051 2SK1052 2SK1053 2SK1056 2SK1057 2SK1058 2SK1059. 1059-Z 2SK1060,1060—Z 2SK1061 2SK1062 2SK1063 2SK1064 2SK1065 2SK1066 2SK1Q67

2sj162

Abstract: Hitachi 2SJ Hitachi DSA002751
Contextual Info: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation

Hitachi DSA002712

Abstract: 2sk1058
Contextual Info: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET November 1996 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation

Contextual Info: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation

"Audio Power Amplifier"

Abstract: Hitachi 2SJ
Contextual Info: 2SJ160,2SJ161,2SJ162 Silicon P-Channel MOS FET HITACHI Application Low frequency power amplifier Complementary pair with 2SK 1056,2SK 1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • W ide area of safe operation •

transistor 2sj162

Abstract: 2SK1058 2SK1057 2SJ160 2SJ161 2SJ162 2SK1056 Hitachi 2SJ
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

transistor 2sj162

Abstract: 2sk1058 2SJ162 2SJ160 2SJ161 2SJ162 2SK1056 2SK1057 2SK1058 Hitachi 2SJ
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

LM49830

Abstract: 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 LME49830 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645
Contextual Info: National Semiconductor Application Note 1850 Troy Huebner John DeCelles July 1, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic

transistor 2sj162

Abstract: 2SJ160 2SJ161 2SJ162 2SK1056 2SK1057 2SK1058 PRSS0004ZE-A SC-65 2SJ162-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2SJ56 2sk176

Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Contextual Info: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid